DESCRIPTION

· The bq4013/Y/LY is a 128 k × 8 nonvolatile SRAM with a capacity of 1,048,576 bits, organized as 131,072 words by 8 bits.

· It integrates control circuitry and a lithium energy source to ensure data retention for at least 10 years without power.

· The device operates at both 5 V and 3.3 V, featuring an industry-standard 32-pin DIP pinout.

FEATURES

· Automatic write-protection during power-up/power-down cycles to prevent data corruption.

· Unlimited write cycles with conventional SRAM operation.

· Internal isolation of the battery before power application to ensure safety and reliability.

· Extremely low standby current consumption, enhancing energy efficiency.

APPLICATIONS

· Suitable for systems requiring reliable nonvolatile memory with unlimited write cycles.

· Ideal for applications needing data retention during power interruptions.

· Compatible with standard 1-Mb SRAM pinout, facilitating easy integration into existing designs.