DESCRIPTION

· The bq4016 is a CMOS nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits.

· It integrates control circuitry and a lithium energy source for reliable nonvolatility with unlimited write cycles.

· The device monitors the 5V supply and activates write-protection during out-of-tolerance conditions, switching to the internal energy source to sustain memory.

· It uses low standby current CMOS SRAMs and a lithium coin cell, offering nonvolatility without the limitations of EEPROM.

· The bq4016 has the same interface as standard SRAMs and requires no external circuitry.

FEATURES

· Data retention in the absence of power.

· Automatic write-protection during power-up/power-down cycles.

· Conventional SRAM operation with unlimited write cycles.

· Minimum 10-year data retention without power.

· Battery internally isolated until power is applied.

APPLICATIONS

· Suitable for applications requiring nonvolatile memory with unlimited write cycles.

· Ideal for systems needing reliable data retention during power interruptions.

· Used in environments where long-term data storage without power is critical.