Rochester Sensors EP900DM/B

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  • Part Number:

    EP900DM/B

  • Manufacturer:

    Rochester Sensors

  • Category:

    Display Drivers

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

  • Description:

    EP900DM/B

  • In stock 1,200
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Specifications
Type
Paramete
Type
Paramete
Programmable Type
-
Speed
-
Supplier Device Package
-
Voltage - Input
-
Mounting Type
-
Number of Macrocells
-
Package / Case
-
Overview

EP900DM/B Classic EPLD Specification Sheet

1. General Description

The EP900DM/B belongs to Altera’s Classic EPLD (Erasable Programmable Logic Device) family, manufactured by Rochester Electronics. It is designed for high-speed, low-power logic integration, leveraging advanced CMOS technology to support 100% TTL emulation. This device integrates multiple PAL- and GAL-type logic functions, offering a balance of logic density, speed, and flexibility for industrial, military, and space-grade applications. It features non-volatile EPROM configuration elements, enabling erasure and reprogramming, and supports a wide range of packages for versatile system integration.

2. Key Features

  • Logic Density: Estimated 450 usable gates (aligning with the EP910 variant in the Classic family)
  • Macrocells: 24 programmable macrocells, configurable for sequential (D, T, JK, SR flipflops) or combinatorial operation
  • I/O Capabilities: Up to 38 maximum user I/O pins, with programmable I/O architecture
  • Performance:
  • Programmability:
  • Clock Flexibility: Dual global clock pins (CLK1, CLK2) and array clock capability for independent register clocking
  • Software & Hardware Support: Compatible with Altera MAX+PLUS II development system; programmable via Altera MPU, Data I/O, and third-party programmers
  • Quality & Reliability:

3. Package Information

  • Package Types: Compatible with the Classic family’s EP910 variant packages, including:
  • Lead Finish: RoHS-compliant (Pb-free) options available (per Rochester’s manufacturing standards)
  • Temperature Range: Industrial (-40°C to 85°C) and commercial (0°C to 70°C) grades supported
  • Storage Temperature: -65°C to 150°C (no bias)

4. Functional Architecture

4.1 Core Components

  • Macrocells: 24 macrocells, each with 8 product terms (programmable-AND/fixed-OR structure) and an XOR gate for polarity control. Supports asynchronous clear via a dedicated product term.
  • Programmable Registers: Individually configurable as D, T, JK, or SR flipflops, or bypassed for combinatorial logic. Automatically cleared on power-up.
  • Clock & Output Control: Two operating modes for output enable/clock select:
  • Feedback Select: Global feedback configuration (similar to EP910), allowing macrocell outputs or I/O pin inputs to feed back to the AND array, accessible to all macrocells.

4.2 Block Diagram Overview

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[Dedicated Inputs / I/O Pins] → [Global Bus (True/Complement Signals)] → [Programmable-AND Array] → [OR Gate] → [XOR Gate] → [Programmable Register / Combinatorial Path] → [Tri-State Output Buffer] → [I/O Pins]
                                                                 ↑                                  ↑
                                                         [Feedback Multiplexer]                [Clock/Output Enable Select]
                                                                 ↑                                  ↑
                                                         [Macrocell/I/O Feedback]             [Global Clock / Array Clock]


5. Electrical Characteristics

5.1 Absolute Maximum Ratings


ParameterConditionsMinMaxUnit
VCCSupply voltage (with respect to ground)-2.07.0V
VIDC input voltage-2.0 (EP910) / -0.5 (EP910I)7.0 (EP910) / VCC+0.5 (EP910I)V
IMAXDC VCC or ground current-250250mA
IOUTDC output current (per pin)-2525mA
TSTGStorage temperature (no bias)-65150°C
TAMBAmbient temperature (under bias)-65135°C
TJJunction temperature (ceramic packages, under bias)-150°C
TJJunction temperature (plastic packages, under bias)-135°C

5.2 Recommended Operating Conditions


ParameterConditionsMinMaxUnit
VCCSupply voltage (commercial)4.755.25V
VCCSupply voltage (industrial)4.55.5V
VIInput voltage-0.3VCC+0.3V
VOOutput voltage0VCCV
TAOperating temperature (commercial)070°C
TAOperating temperature (industrial)-4085°C
tR / tFInput rise/fall time (commercial)-100ns
tR / tFInput rise/fall time (industrial)-50ns

5.3 DC Electrical Characteristics (VCC = 5V ±5%, TA = 25°C)


ParameterConditionsMinMaxUnit
VIHHigh-level input voltage2.0VCC+0.3V
VILLow-level input voltage-0.30.8V
VOH (TTL)High-level output voltage (IOH = -4 mA)2.4-V
VOH (CMOS)High-level output voltage (IOH = -0.6 mA)3.84-V
VOLLow-level output voltage (IOL = 4 mA)-0.45V
III/O pin leakage current (dedicated inputs)-1010μA
IOZTri-state output leakage current-1010μA

5.4 Supply Current (ICC)


ParameterConditionsTypMaxUnit
ICC1 (Non-Turbo, Standby)No load, no logic transitions20 (EP910) / 60 (EP910I)150μA
ICC2 (Non-Turbo, Active)No load, f = 1 MHz6 (EP910) / 4 (EP910I)20 (EP910) / 12 (EP910I)mA
ICC3 (Turbo, Active)No load, f = 1 MHz45 (EP910) / 120 (EP910I)80 (100) (EP910) / 150 (EP910I)mA

5.5 Capacitance (TA = 25°C, f = 1 MHz)


ParameterConditionsMaxUnit
CINInput pin capacitance20 (EP910) / 8 (EP910I)pF
CIOI/O pin capacitance20 (EP910) / 8 (EP910I)pF
CCLK1CLK1 pin capacitance20 (EP910) / 10 (EP910I)pF
CCLK2CLK2 pin capacitance60 (EP910) / 12 (EP910I)pF

6. Timing Parameters (Turbo Mode Enabled)

6.1 External Timing Parameters (EP910I-12 Variant Reference)


ParameterConditionsMinMaxUnit
tPD1Input to non-registered output (C1 = 35 pF)-12.0ns
tPD2I/O input to non-registered output (C1 = 35 pF)-12.0ns
tPZXInput to output enable (C1 = 35 pF)-15.0ns
tPXZInput to output disable (C1 = 5 pF)-15.0ns
tCLRAsynchronous output clear time (C1 = 35 pF)-15.0ns
fMAXMaximum pipelined frequency125.0-MHz
tSU (Global)Global clock setup time8.0-ns
tH (Global)Global clock hold time0.0-ns
tCHGlobal clock high time5.0-ns
tCLGlobal clock low time5.0-ns
tCO1Global clock to output delay (C1 = 35 pF)-8.0ns
tCNTGlobal clock minimum period-13.0ns
fCNTMaximum internal global clock frequency76.9-MHz

6.2 Internal Timing Parameters (EP910I-12 Variant Reference)


ParameterConditionsMaxUnit
tINInput pad and buffer delay2.0ns
tIOI/O input pad and buffer delay0.0ns
tLADLogic array delay8.0ns
tODOutput buffer and pad delay (C1 = 35 pF)2.0ns
tZXOutput buffer enable delay (C1 = 35 pF)5.0ns
tXZOutput buffer disable delay (C1 = 5 pF)5.0ns
tSU (Register)Register setup time4.0ns
tH (Register)Register hold time4.0ns
tICArray clock delay12.0ns
tICSGlobal clock delay4.0ns
tFDFeedback delay1.0ns
tCLR (Register)Register clear time11.0ns

7. Programming & Design Support

7.1 Programming

  • Erasure: UV light erasure (windowed ceramic packages) for design modifications.
  • Programming Tools: Altera Master Programming Unit (MPU), Data I/O, BP Microsystems, and third-party programmers.
  • Security: Programmable security bit to prevent design copying; reset only via UV erasure.

7.2 Software Support

  • Development System: Altera MAX+PLUS II (runs on Windows PCs, Sun SPARCstation, HP 9000, IBM RISC System/6000).
  • Design Entry: Schematic, VHDL, Verilog HDL, AHDL, EDIF, and LPM interfaces.
  • Simulation & Timing: Integrated timing analysis, simulation, and point-to-point delay prediction.


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