Name: IRF540N_R4942
Brand: onsemi
SKU: JM-IRF540N_R4942
Availability: InStock

onsemi IRF540N_R4942

View All Single FETs, MOSFETs by onsemi

Part Number:
IRF540N_R4942
Manufacturer:
onsemi
Category:
Single FETs, MOSFETs
RoHs:
Non-RoHS Compliant
Datasheet:
IRF540N_R4942_Datesheet
Description:
MOSFET N-CH 100V 33A TO220-3
In stock 0

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Specifications

Type

Paramete

Type

Paramete

Qualification

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Package / Case

TO-220-3

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Drain to Source Voltage (Vdss)

100 V

Gate Charge (Qg) (Max) @ Vgs

79 nC @ 20 V

FET Feature

Input Capacitance (Ciss) (Max) @ Vds

1220 pF @ 25 V

Grade

Power Dissipation (Max)

120W (Tc)

Supplier Device Package

TO-220-3

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

40mOhm @ 33A, 10V

Vgs (Max)

±20V

Vgs(th) (Max) @ Id

4V @ 250µA

Mounting Type

Through Hole

Overview

DESCRIPTION

· The IRF540N is a N-Channel Power MOSFET with a drain-source voltage of 100V and a continuous drain current of 33A at 25°C.

· It features an ultra-low on-resistance of 0.040Ω at a gate-source voltage of 10V.

· Packaged in a TO-220AB, it is designed for high efficiency and reliability in power applications.

FEATURES

· Ultra Low On-Resistance: rDS(ON) = 0.040Ω at VGS = 10V.

· Includes Temperature Compensated PSPICE™ and SABER© Electrical Models.

· Provides Spice and SABER© Thermal Impedance Models.

· Features Peak Current vs Pulse Width and UIS Rating Curves for enhanced performance analysis.

APPLICATIONS

· Suitable for high-speed switching applications.

· Ideal for use in power supplies and motor control circuits.

· Effective in DC-DC converters and other power management tasks.

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