IS21EF08G‑JCLI Datasheet Summary

1. Basic Information

• Part Number: IS21EF08G‑JCLI
• Manufacturer: ISSI (Integrated Silicon Solution, Inc.)
• Device Type: 8GB eMMC 5.1 Embedded Flash Memory
• NAND Type: MLC NAND
• Interface: eMMC 5.1 (backward compatible with v4.3/4.4/4.41/4.5/4.51/5.0)
• Density: 8GB
• Package: 153‑ball FBGA (11.5 mm × 13 mm × 1.0 mm)
• Option: J‑Option (Boot Partition: 4096 KB each, RPMB: 4096 KB)
• Temperature Grade: Industrial (I‑Grade)
• Operating Temp Range: −40 °C to +85 °C
• Green Compliance: RoHS‑compliant, halogen‑free, TSCA compliant
• Revision: Rev. A8 (09/24/2025)

2. Key Features

• eMMC 5.1 compliant; supports HS200 (up to 200 MB/s) and HS400 (up to 400 MB/s)
• Clock frequency: 0–200 MHz; bus widths: 1‑bit (default), 4‑bit, 8‑bit
• pSLC mode for improved performance, endurance, and reliability
• Internal ECC, wear leveling, power‑failure protection, and safe data update
• Security: secure bad block erase/trim, permanent/partial write protection
• eMMC 5.1 features: HS400, FFU, Power Off Notification, Pre‑EOL info, RPMB enhancements
• No CMD Queuing support

3. Power Supply

• Core supply (VCC): 2.7 V – 3.6 V
• I/O supply (VCCQ): 1.7 V – 1.95 V or 2.7 V – 3.6 V
• VCCQ ≤ VCC required
• Power-up time: 35 ms (3.3 V), 25 ms (1.8 V)

4. Performance Specifications

4.1 Sequential Burst Performance (8‑bit bus, VCC = 3.3 V, VCCQ = 1.8 V)

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4.2 Random Burst Performance (IOPS)

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4.3 Power Consumption (Typical, TA = 25 °C)

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5. Memory Layout (J‑Option)

• User Density: 7,837,581,312 Bytes
• Boot Partition 1: 4096 KB
• Boot Partition 2: 4096 KB
• RPMB (Replay Protected Memory Block): 4096 KB
• Write Cache Size: 64 KB

6. Pin Interface Summary

• CLK: Clock input
• CMD: Command/response
• DAT0–DAT7: 8‑bit bidirectional data bus
• RST#: Hardware reset
• DS: Data strobe (for HS400)
• VCC: Core power
• VCCQ: I/O power
• VSS/VSSQ: Ground
• VDDi: Internal regulator (bypass with 1–4.7 μF cap to GND)
• RFU/NC: Reserved or no‑connect

7. Absolute Maximum Ratings

• Voltage (VCC, VCCQ, inputs): −0.6 V to +4.6 V
• ESD: per industry standard (not explicitly rated)
• Storage temperature: −40 °C to +105 °C
• Maximum case temperature (I‑grade): +95 °C

8. Key Functions

• pSLC Mode: Reduces effective density but boosts reliability and speed
• FFU: Field Firmware Update in‑system
• Power Off Notification: Safe power‑down sequencing
• Write Cache: Off by default; enabled via EXT_CSD
• Cache Barrier: Ordered flushing control
• PSA (Production State Awareness): Optimized pre‑/post‑soldering operation
• Boot Support: Standard and alternative boot with high‑speed/DDR timing

9. Electrical & Timing Highlights

• HS400: DDR at 200 MHz, data strobe synchronized
• Clock duty cycle: 45–55%
• Input setup/hold (HS400): 0.4 ns min
• Signal slew rate: 1.125 V/ns
• Bus load capacitance: ≤30 pF per line

10. Applications

• Industrial embedded systems
• Automotive (non‑A2) storage
• IoT, gateways, industrial controllers
• High‑reliability embedded storage