onsemi MCH6342-TL-H

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  • Part Number:

    MCH6342-TL-H

  • Manufacturer:

    onsemi

  • Category:

    FET, MOSFET Arrays

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf MCH6342-TL-H_Datesheet

  • Description:

    MOSFET P-CH 30V 4.5A 6MCPH

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Technology
MOSFET (Metal Oxide)
Package / Case
6-SMD, Flat Leads
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 10 V
Grade
-
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
4.5A (Ta)
Mounting Type
Surface Mount
Power Dissipation (Max)
1.5W (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Supplier Device Package
6-MCPH
Drain to Source Voltage (Vdss)
30 V
Vgs(th) (Max) @ Id
-
FET Type
P-Channel
Qualification
-
Vgs (Max)
±10V
Gate Charge (Qg) (Max) @ Vgs
8.6 nC @ 4.5 V
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
73mOhm @ 2A, 4.5V
Overview

Key Features

  • Low On-Resistance
  • 1.8V Drive
  • High Speed Switching
  • ESD Diode-Protected Gate
  • Pb-Free, Halogen-Free, and RoHS Compliance

Absolute Maximum Ratings at Ta = 25°C

  • Drain to Source Voltage (VDSS): -30V
  • Gate to Source Voltage (VGSS): ±10V
  • Drain Current (DC) (ID): -4.5A
  • Drain Current (Pulse) (IDP): -18A for PW ≤ 10μs, duty cycle ≤ 1%
  • Power Dissipation (PD): 1.5W when mounted on ceramic substrate (1500mm² × 0.8mm)
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55 to +150°C

Thermal Resistance Ratings

  • Junction to Ambient (RθJA): 83.3°C/W when mounted on ceramic substrate (1500mm² × 0.8mm)

Electrical Characteristics at Ta = 25°C

  • Drain to Source Breakdown Voltage (V(BR)DSS): -30V
  • Zero-Gate Voltage Drain Current (IDSS): -1μA
  • Gate to Source Leakage Current (IGSS): ±10μA
  • Gate Threshold Voltage (VGS(th)): -0.4 to -1.3V
  • Forward Transconductance (gFS): 3.4 to 5.8 S
  • Static Drain to Source On-State Resistance (RDS(on)):
  • Input Capacitance (Ciss): 650 pF
  • Output Capacitance (Coss): 105 pF
  • Reverse Transfer Capacitance (Crss): 83 pF
  • Turn-ON Delay Time (td(on)): 8.2 ns
  • Rise Time (tr): 28 ns
  • Turn-OFF Delay Time (td(off)): 100 ns
  • Fall Time (tf): 60 ns
  • Total Gate Charge (Qg): 8.6 nC
  • Gate to Source Charge (Qgs): 1.3 nC
  • Gate to Drain “Miller” Charge (Qgd): 2.4 nC
  • Forward Diode Voltage (VSD): -0.83 to -1.2V

Packaging and Ordering Information

  • Package Type: TL
  • Marking: YR
  • Shipping: 3,000 units per tape & reel, Pb-Free / Halogen-Free packaging
  • Ordering Code: MCH6342-TL-H

Recommended Soldering Footprint

  • Package: SC-88FL / MCPH6 CASE 419AS
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