onsemi MMBFJ177LT1G

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  • Part Number:

    MMBFJ177LT1G

  • Manufacturer:

    onsemi

  • Category:

    FET, MOSFET Arrays

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf MMBFJ177LT1G_Datesheet

  • Description:

    JFET P-CH 30V SOT23-3

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Qualification
-
Supplier Device Package
SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)
-
Input Capacitance (Ciss) (Max) @ Vds
11pF @ 10V (VGS)
Voltage - Cutoff (VGS off) @ Id
800 mV @ 10 nA
Resistance - RDS(On)
300 Ohms
FET Type
P-Channel
Power - Max
225 mW
Current - Drain (Idss) @ Vds (Vgs=0)
1.5 mA @ 15 V
Voltage - Breakdown (V(BR)GSS)
30 V
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3
Current Drain (Id) - Max
-
Grade
-
Mounting Type
Surface Mount
Overview

MMBFJ177LT1G Model Information

Basic Information

  • Manufacturer: onsemi
  • Model Number: MMBFJ177LT1G
  • Revision: Rev. 9
  • Date: October 1994, Revised August 2024
  • Website: www.onsemi.com
  • Publication Order Number: MMBFJ177LT1/D

Product Overview

The MMBFJ177LT1G is a P-Channel depletion mode JFET chopper. It is designed for automotive and other applications requiring unique site and control change requirements. The device is AEC-Q101 qualified and PPAP capable. It is also Pb-free, halogen-free/BFR free, and RoHS compliant.

Features

  • Automotive Qualification: S prefix for automotive applications, AEC-Q101 qualified, and PPAP capable.
  • Environmental Compliance: Pb-free, halogen-free/BFR free, and RoHS compliant.

Maximum Ratings

  • Drain-Gate Voltage (VDG): -25 Vdc
  • Gate-Source Voltage (VGS): 25 Vdc
  • Total Device Dissipation: 225 mW at TA = 25°C, derate 1.8 mW/°C above 25°C
  • Thermal Resistance, Junction-to-Ambient (RθJA): 556 °C/W
  • Junction and Storage Temperature (TJ, Tstg): -55 to +150 °C

Thermal Characteristics

  • Total Device Dissipation: 225 mW at TA = 25°C
  • Derate above 25°C: 1.8 mW/°C
  • Thermal Resistance, Junction-to-Ambient (RθJA): 556 °C/W

Marking Diagram

  • Package: SOT-23 (TO-236)
  • Pin Configuration:Pin 1: DRAINPin 2: SOURCEPin 3: GATE

Ordering Information

  • Package Type: SOT-23 (Pb-free)
  • Quantity: 3000 per tape & reel
  • Marking: MMBFJ177LT1G
  • Date Code: M = Date Code, G = Pb-free package

Electrical Characteristics (TA = 25°C)

  • OFF CHARACTERISTICS:Gate-Source Breakdown Voltage (V(BR)GSS): 30 VdcGate Reverse Current (IGSS): -1.0 nAdcGate Source Cutoff Voltage (VGS(off)): 0.8 to 2.5 Vdc
  • ON CHARACTERISTICS:Zero-Gate-Voltage Drain Current (IDSS): -1.5 to -20 mAdcDrain Cutoff Current (ID(off)): -1.0 nAdcDrain Source On Resistance (rDS(on)): 300 ΩInput Capacitance (Ciss): 11 pFReverse Transfer Capacitance (Crss): 5.5 pF

Typical Characteristics

  • Drain Current vs. Drain-Source Voltage: See Figure 1 in the datasheet.
  • Reverse Transfer Capacitance: See Figure 2 in the datasheet.
  • Input Capacitance: See Figure 3 in the datasheet.

Mechanical Case Outline and Package Dimensions

  • Package Type: SOT-23 (TO-236)
  • Dimensions: 2.90x1.30x1.00 mm
  • Pitch: 1.90 mm
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