onsemi MUN5312DW1T1

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  • Part Number:

    MUN5312DW1T1

  • Manufacturer:

    onsemi

  • Category:

    Bipolar Transistor Arrays, Pre-Biased

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf MUN5312DW1T1_Datesheet

  • Description:

    TRANS PREBIAS NPN/PNP SOT363

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Current - Collector (Ic) (Max)
100mA
Power - Max
250mW
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max)
50V
Supplier Device Package
SC-88/SC70-6/SOT-363
Frequency - Transition
-
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5mA, 10V
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Grade
-
Resistor - Emitter Base (R2)
22kOhms
Qualification
-
Resistor - Base (R1)
22kOhms
Overview

DESCRIPTION

· The MUN5311DW1T1 series features dual NPN and PNP silicon surface mount transistors with a monolithic bias resistor network.

· Each BRT (Bias Resistor Transistor) integrates a single transistor with two resistors, eliminating the need for external bias components.

· Packaged in the SOT-363 format, these devices are optimized for low power, space-constrained surface mount applications.



FEATURES

· Simplifies circuit design by integrating bias resistors directly into the transistor package.

· Reduces board space and component count, enhancing compactness and efficiency.

· Available in 8 mm, 7 inch/3000 unit tape and reel for automated assembly processes.



APPLICATIONS

· Ideal for use in low power applications where minimizing board space is crucial.

· Suitable for replacing discrete transistors and their external resistor networks in various electronic circuits.

· Commonly used in consumer electronics, automotive, and industrial control systems.

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