onsemi NSVBC143JPDXV6T1G

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  • Part Number:

    NSVBC143JPDXV6T1G

  • Manufacturer:

    onsemi

  • Category:

    Bipolar Transistor Arrays, Pre-Biased

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf NSVBC143JPDXV6T1G_Datesheet

  • Description:

    SS SOT563 RSTR XSTR TR

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Resistor - Emitter Base (R2)
47kOhms
Grade
-
Frequency - Transition
-
Qualification
-
Supplier Device Package
SOT-563
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Package / Case
SOT-563, SOT-666
Power - Max
357mW
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
2.2kOhms, 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Current - Collector (Ic) (Max)
100mA
Mounting Type
Surface Mount
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Overview

DESCRIPTION



· This series of digital transistors is designed to replace a single device and its external resistor bias network.

· The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor.

· The BRT eliminates these individual components by integrating them into a single device.

· The use of a BRT can reduce both system cost and board space.



FEATURES



· Simplifies Circuit Design

· Reduces Board Space

· Reduces Component Count

· NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable*

· These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant



APPLICATIONS



· Automotive Applications

· Other Applications Requiring Unique Site and Control Change Requirements

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