onsemi NTR4003NT1G

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  • Part Number:

    NTR4003NT1G

  • Manufacturer:

    onsemi

  • Category:

    Single FETs, MOSFETs

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf NTR4003NT1G_Datesheet

  • Description:

    MOSFET N-CH 30V 500MA SOT23-3

  • In stock 82,415
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Specifications
Type
Paramete
Type
Paramete
FET Type
N-Channel
Power Dissipation (Max)
690mW (Ta)
Grade
-
Drain to Source Voltage (Vdss)
30 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4V
Package / Case
TO-236-3, SC-59, SOT-23-3
Qualification
-
Supplier Device Package
SOT-23-3 (TO-236)
Rds On (Max) @ Id, Vgs
1.5Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)
Vgs(th) (Max) @ Id
1.4V @ 250µA
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
1.15 nC @ 5 V
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
21 pF @ 5 V
Overview

DESCRIPTION



· Single N-Channel Small Signal MOSFET in SOT-23 package.

· Designed for 30 V applications with a maximum drain current of 0.56 A.

· Suitable for automotive and portable applications, compliant with AEC-Q101 and RoHS standards.



FEATURES



· Low gate voltage threshold for easier drive circuit design.

· Low gate charge enhances switching speed.

· ESD protected gate ensures device safety.

· SOT-23 package offers superior thermal performance.

· Minimum breakdown voltage of 30 V.

· NVR prefix indicates suitability for automotive applications with specific site and control change requirements.



APPLICATIONS



· Notebooks: Utilized in level shifters, logic switches, and low side load switches.

· Portable applications: Ideal for compact and efficient power management solutions.

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