Nexperia USA Inc. PMBT3946YPN-Q

View All Bipolar RF Transistors by Nexperia USA Inc.

Part Number:
PMBT3946YPN-Q
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar RF Transistors
RoHs:
Non-RoHS Compliant
Datasheet:
Description:
40 V, 200 mA NPN/PNP general-purpose double transistor
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Overview

PMBT3946YPN-Q Full Specification Summary

1. Basic Device Information

Full Part Number: PMBT3946YPN-Q
Device Type: NPN/PNP general-purpose dual transistor (NPN + PNP pair)
Manufacturer: Nexperia
Qualification: AEC‑Q101 qualified for automotive applications
Package: 6‑pin TSSOP (SOT363 / SC‑88), ultra‑small SMD plastic package
Dimensions: 2.1 mm × 1.25 mm × 0.95 mm; pitch 0.65 mm
Document: Product data sheet, Rev. 2 (1 July 2025)
Marking Code: BB% (where % = factory code)
Complementary Parts:

2. Key Features

Dual NPN/PNP transistor in one compact package
Saves PCB space and simplifies design
AEC‑Q101 qualified for automotive environments
High DC current gain (hFE)
Fast switching speed
Low saturation voltage
ESD‑robust for reliable operation
RoHS compliant

3. Quick Reference Data

Parameter	Value	Unit
VCEO (collector‑emitter voltage, open base)	40	V
IC (continuous collector current)	200	mA
hFE (DC current gain @ IC = 10 mA, VCE = 1 V)	100 – 300	—
Total power dissipation (per device)	350	mW
Junction temperature	−55 to +150	°C

4. Pin Configuration (Top View)

Pin No.	Symbol	Description
1	E1	Emitter of TR1 (NPN)
2	B1	Base of TR1 (NPN)
3	C2	Collector of TR2 (PNP)
4	E2	Emitter of TR2 (PNP)
5	B2	Base of TR2 (PNP)
6	C1	Collector of TR1 (NPN)

5. Absolute Maximum Ratings

Parameter	TR1 (NPN)	TR2 (PNP)	Unit
VCBO (collector‑base voltage, open emitter)	60	−40	V
VCEO	40	−40	V
VEBO (emitter‑base voltage)	6	−6	V
IC (continuous)	200	−200	mA
IBM (peak base current, tp ≤ 1 ms)	100	−100	mA
Ptot (per transistor)	230	230	mW
Ptot (per device)	—	350	mW
Tj, Tstg	−65 to +150	−65 to +150	°C
Tamb	−55 to +150	−55 to +150	°C

6. Thermal Characteristics

Parameter	Value	Unit
Rth(j‑a) (per transistor)	543	K/W
Rth(j‑sp) (per transistor)	290	K/W
Rth(j‑a) (per device)	357	K/W

7. Electrical Characteristics @ Tamb = 25 °C

TR1 (NPN)

Parameter	Conditions	Min	Typ	Max	Unit
ICBO	VCB = 30 V, IE = 0	—	—	50	nA
hFE	VCE = 1 V, IC = 10 mA	100	180	300	—
VCE(sat)	IC = 10 mA, IB = 1 mA	—	75	200	mV
VBE(sat)	IC = 10 mA, IB = 1 mA	650	750	850	mV
fT (transition frequency)	VCE = 20 V, IC = 10 mA	300	—	—	MHz
tON / tOFF	—	—	70 / 250	ns

TR2 (PNP)

Parameter	Conditions	Min	Typ	Max	Unit
ICBO	VCB = −30 V, IE = 0	—	—	−50	nA
hFE	VCE = −1 V, IC = −10 mA	100	180	300	—
VCE(sat)	IC = −10 mA, IB = −1 mA	—	−100	−250	mV
VBE(sat)	IC = −10 mA, IB = −1 mA	—	−750	−850	mV
fT	VCE = −20 V, IC = −10 mA	250	—	—	MHz
tON / tOFF	—	—	70 / 300	ns

8. Functional Description

TR1: NPN transistor for general‑purpose switching and amplification
TR2: PNP transistor complementary to TR1
Independent bias and operation for each channel
Suitable for push‑pull, level shift, analog switch, and signal amplification circuits
Built‑in ESD and surge robustness

9. Applications

Automotive small‑signal switching & amplification
Industrial and consumer general‑purpose circuits
Level shifting & interface circuits
Push‑pull driver stages
Portable electronics & low‑power systems
Sensor and analog signal conditioning

10. Ordering & Packaging

Part Number: PMBT3946YPN‑Q
Package: TSSOP6 (SOT363)
Package Code: SOT363
Package Type: Surface‑mount (SMD)
Quantity: Tape‑and‑reel

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