QPA2610 Model Information

Model Overview

• Model Number: QPA2610
• Frequency Range: 8.5 – 10.5 GHz
• Package Type: 5 mm x 5 mm plastic overmold QFN
• Operating Temperature Range: -40°C to +85°C
• Storage Temperature Range: -55°C to +100°C
• Key Features
• Output Power (PIN = 10 dBm): > 33 dBm
• Power Added Efficiency (PAE) (PIN = 10 dBm): > 47%
• Small Signal Gain: > 37.5 dB
• Input Return Loss: > 14 dB
• Output Return Loss: > 12 dB
• Recommended Bias: VD = 20 V, IDQ = 56 mA
• Package Size: 5.0 mm x 5.0 mm x 0.85 mm
• Lead-free and RoHS Compliant
• Product Overview
  Qorvo's QPA2610 is a high-performance power amplifier designed for X-Band applications. Fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15), the QPA2610 delivers > 2 W of saturated output power and 23 dB of large-signal gain while achieving an impressive 47% power-added efficiency. The amplifier is packaged in a compact 5 x 5 mm plastic overmold QFN, making it suitable for phased array radar applications. The RF input and output ports are matched to 50 Ω and include integrated DC blocking capacitors. The QPA2610 is part of a three-amplifier family and is pin-compatible with QPA2612 and QPA2611.
• Ordering Information
• Part No.: QPA2610
• Description: 2 Watt X-Band Power Amplifier
• Part No.: QPA2610TR7
• Description: 500 pcs. on 7 inch reel
• Part No.: QPA2610EVB
• Description: QPA2610 Evaluation Board
• Applications
• Radar: Suitable for radar systems requiring high power and efficiency
• Communications: Ideal for high-frequency communication systems
• Satcom: Suitable for satellite communication applications
• Electrical Specifications
• Operational Frequency: 8.5 – 10.5 GHz
• Output Power (PIN = 10 dBm): > 33.9 dBm
• Power Added Efficiency (PIN = 10 dBm): > 47.4%
• Small Signal Gain (CW): > 38.5 dB
• Input Return Loss (CW): > 19 dB
• Output Return Loss (CW): > 14 dB
• 3rd Order IMD (PIN/Tone = 0 dBm): -15 dBc at 10 MHz tone spacing
• POUT Temp. Coeff. (85°C to 25°C, PIN = 10 dBm): -0.21 dB/°C
• Small Signal Gain Temp. Coefficient (85°C to -40°C): -0.09 dB/°C
• Gate Leakage Current (VD = 10 V, VG = -3.7 V): -1.23 mA
• Absolute Maximum Ratings
• Drain Voltage (VD): 29.5 V
• Gate Voltage Range (VG): -4 to 0 V
• Drain Current (ID): 700 mA
• Gate Current (IG): See plot on page 16
• Power Dissipation (PDISS), TBASE = 85 °C: 8.8 W
• Input Power (PIN), Pulsed (100us/10%), 50 Ω, VD = 20 V, TBASE = 85 °C: 18 dBm
• Input Power (PIN), Pulsed (100us/10%), VSWR 3:1, VD = 20 V, TBASE = 85 °C: 18 dBm
• Mounting Temperature (30 seconds max.): 260 °C
• Storage Temperature: -55 to 150 °C
• Performance Plots
• Output Power vs. Frequency: Varies with frequency and temperature, see charts for detailed data.
• Power Added Efficiency vs. Frequency: Varies with frequency and temperature, see charts for detailed data.
• Drain Current vs. Frequency: Varies with frequency and temperature, see charts for detailed data.
• Gate Current vs. Frequency: Varies with frequency and temperature, see charts for detailed data.
• Output Power vs. Input Power: Varies with input power and frequency, see charts for detailed data.
• Power Added Efficiency vs. Input Power: Varies with input power and frequency, see charts for detailed data.
• Drain Current vs. Input Power: Varies with input power and frequency, see charts for detailed data.
• Gate Current vs. Input Power: Varies with input power and frequency, see charts for detailed data.
• Thermal and Reliability Information
• Thermal Resistance (θJC): 11.30 °C/W (Tbase = +85 °C, VD = 20 V, IDQ = 56 mA, PDISS = 1.12 W)
• Channel Temperature (TCH): 97.7 °C (under RF conditions)
• Bias-up and Bias-down Procedure
• Bias-up: Set ID limit to 750 mA, IG limit to 10 mA. Apply -4 V to VG, then +20 V to VD. Adjust VG until IDQ = 56 mA.
• Bias-down: Turn off RF signal. Reduce VG to -4 V, then set VD to 0 V. Turn off VD and VG supplies.
• Mechanical Information
• Package Base and Leads: Ni-Au plated
• Part Markings: QPA2610, Assembly Year, Assembly Week, Lot Number
• Handling Precautions
• ESD-Sensitive Device: Handle with care to avoid ESD damage.
• Moisture Sensitivity Level (MSL): Level 3
• RoHS Compliance: Compliant with 2011/65/EU RoHS directive