Toshiba Semiconductor and Storage TPCP8F01(TE85L,F,M


- Part Number:
TPCP8F01(TE85L,F,M
- Manufacturer:
- Category:
- RoHs:
RoHS Compliant
- Datasheet:
TPCP8F01(TE85L,F,M_Datesheet
- Description:
X35 PB-F POWER MOSFET TRANSISTOR
- In stock 0
DESCRIPTION
· Multi-chip device combining a Silicon PNP Epitaxial Transistor and a Silicon N Channel MOS FET.
· Designed for switching and load switch applications.
FEATURES
· High DC current gain (hFE = 200 to 500) for PNP Transistor.
· Low collector-emitter saturation voltage (VCE(sat) = -0.19 V max) for PNP Transistor.
· High-speed switching (tf = 40 ns typ.) for PNP Transistor.
· Maximum drain-source voltage (VDSS) of 20 V for MOS FET.
· Maximum gate-source voltage (VGSS) of ±10 V for MOS FET.
APPLICATIONS
· Suitable for switching applications.
· Ideal for load switch applications.
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Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage