Toshiba Semiconductor and Storage TPH2R903PL,L1Q

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Specifications
Type
Paramete
Type
Paramete
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
2300 pF @ 15 V
Power Dissipation (Max)
960mW (Ta), 81W (Tc)
Qualification
-
Package / Case
8-PowerVDFN
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Supplier Device Package
8-SOP Advance (5x5)
Vgs(th) (Max) @ Id
2.1V @ 200µA
Grade
-
Rds On (Max) @ Id, Vgs
2.9mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Drain to Source Voltage (Vdss)
30 V
FET Feature
-
Vgs (Max)
±20V
FET Type
N-Channel
Operating Temperature
175°C
Overview

Product Introduction: Toshiba Semiconductor and Storage TPH2R903PL, L1Q


The Toshiba TPH2R903PL, L1Q is a high-performance power MOSFET designed for power management and efficient power control applications. This MOSFET utilizes Toshiba’s advanced technology, providing exceptional switching speed and high efficiency, meeting the modern power system's demands for quick response and low losses. The TPH2R903PL features a low R_DS(on) (on-resistance), which effectively reduces power loss and enhances overall system efficiency. It is ideal for use in DC-DC converters, switching power supplies, motor drivers, and other power management applications.


Key Features:

  • Low R_DS(on): Ensures higher efficiency and lower power loss.
  • High Voltage Rating: Suitable for high-voltage environments, ensuring reliability and durability.
  • Fast Switching Performance: Reduces switching losses and improves system response speed.
  • Energy-efficient: Helps achieve efficient energy conversion and reduces overall system power consumption.


  • Applications:
  • Power electronics systems
  • DC-DC converters
  • High-efficiency power management
  • Motor drive systems
  • Battery management systems


Frequently Asked Questions (FAQs)


Q1: Is the TPH2R903PL suitable for high-frequency switching power supply applications?

A1: Yes, the TPH2R903PL is highly suitable for high-frequency switching power supplies due to its fast switching characteristics and low on-resistance, which helps reduce switching losses and improve efficiency.


Q2: What is the maximum operating voltage of this MOSFET?

A2: The TPH2R903PL has a maximum operating voltage of 30V, making it ideal for power management applications in high-voltage environments.


Q3: What are the typical applications of the TPH2R903PL MOSFET?

A3: This MOSFET is widely used in DC-DC converters, switching power supplies, motor drives, and battery management systems.


Q4: How should I choose a driver that is compatible with the TPH2R903PL?

A4: When selecting a driver, consider the gate drive voltage and switching frequency requirements of the MOSFET. It is recommended to choose a driver that can provide sufficient gate drive current and is suitable for high switching frequencies.


Q5: How can I optimize the performance of the TPH2R903PL in circuit design?

A5: To maximize the performance of the TPH2R903PL, it is recommended to use an appropriate heat dissipation solution to ensure the MOSFET operates within a safe temperature range. Additionally, using a layout with low parasitic inductance can further improve switching speed and efficiency.


Q6: What is the R_DS(on) of the TPH2R903PL?

A6: The typical R_DS(on) of the TPH2R903PL is 2.5mΩ, which is very low, helping to significantly reduce power loss and improve efficiency.


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