MDD 2N7002K

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  • Part Number:

    2N7002K

  • Manufacturer:

    MDD

  • Category:

    Single, Pre-Biased Bipolar Transistors

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf 2N7002K_Datesheet

  • Description:

    MOSFET SOT-23 N Channel 60V

  • In stock 786,000
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Specifications
Type
Paramete
Type
Paramete
Rds On (Max) @ Id, Vgs
900mOhm @ 300mA, 10V
Mounting Type
Surface Mount
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
FET Type
N-Channel
Power Dissipation (Max)
500mW (Ta)
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
23.8 pF @ 10 V
Qualification
-
FET Feature
-
Operating Temperature
-55°C ~ 150°C
Gate Charge (Qg) (Max) @ Vgs
0.31 nC @ 10 V
Grade
-
Package / Case
TO-236-3, SC-59, SOT-23-3
Vgs (Max)
±20V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)
Vgs(th) (Max) @ Id
2.5V @ 250µA
Drain to Source Voltage (Vdss)
60 V
Supplier Device Package
SOT-23
Overview

Specification Sheet for SOT232N70S702K MOSFET

Basic Information

  • Part Number: SOT232N70S702K
  • Description: SMD Plastic-Encapsulate MOSFETs, SOT-23 series, 3 pads
  • Type: 2N7002K Type, 60V N-Channel Enhancement Mode MOSFET
  • Vendor: NextGen Components, Inc.
  • Compliance: RoHS/RoHS III compliant
  • Package: Tape/Reel, 3000pcs/Reel

Main Features

  • High density cell design for low RDS(ON)
  • Voltage controlled small signal switch
  • Rugged and reliable
  • High saturation current capability
  • HMB ESD protected (2000V)

Applications

  • Load Switch for Portable Devices
  • DC/DC Converter

Package and Marking

  • Package Code: SOT23
  • Marking Code: 702K
  • Dimensions:A: 1.0 - 1.4 mmA1: 0.10 mmb: 0.35 - 0.50 mmc: 0.10 - 0.20 mmD: 2.70 - 3.10 mmE: 1.40 - 1.60 mmE1: 2.40 - 2.80 mme: 1.9 mmL: 0.10 - 0.30 mmL1: 0.40 mmƟ: 0° - 10°

Electrical Characteristics (Ta=25°C unless otherwise specified)

Max. Ratings

  • Drain-Source Voltage (VDS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 0.6A
  • Power Dissipation (PD): 0.3W
  • Thermal Resistance (RθJA): 400°C/W
  • Junction Temperature (TJ): +150°C
  • Storage Temperature Range (TSTG): -50°C to +150°C

MOSFET Electrical Characteristics

  • Drain-Source Breakdown Voltage (V(BR)DSS): 60V (VGS=0V, ID=250μA)
  • Zero Gate Voltage Drain Current (IDSS): 1µA (VDS=60V, VGS=0V) at 25°C, 100µA at 125°C
  • Gate-Body Leakage Current (IGSS): ±10µA (VGS=±20V, VDS=0V)
  • Gate Threshold Voltage (VGS(TH)): 1.0 - 2.5V (VDS=VGS, ID=250μA)
  • Drain-Source On-State Resistance (RDS(ON)):0.9Ω @ VGS=10V, ID=0.5A1.4Ω @ VGS=4.5V, ID=0.3A

Dynamic Electrical Characteristics

  • Input Capacitance (Ciss): 23.8pF (VDS=30V, VGS=0V, f=1MHz)
  • Output Capacitance (Coss): 3.9pF
  • Reverse Transfer Capacitance (Crss): 1.5pF
  • Total Gate Charge (Qg): 0.93nC (VDS=30V, ID=0.5A)

Switching Characteristics

  • Turn on Delay Time (td(on)): 6ns (VDD=30V, ID=0.3A, RG=3.3Ω, VGS=10V)
  • Turn on Rise Time (tr): 3.5ns
  • Turn Off Delay Time (td(off)): 20ns
  • Turn Off Fall Time (tf): 5.9ns

Source Drain Diode Characteristics

  • Source drain current (Body Diode) (ISD): 0.2A (VGS=0V, ID=250μA)
  • Forward on voltage (VSD): 0.78 - 1.2V (VDS=60V, VGS=0V)

Mechanical Data

  • JEDEC SOT-23 molded plastic body
  • Matte tin plated
  • Polarity symbol marking on case
  • Weight per piece: 0.00019 Ounce, 0.00591 grams

Reliability Tests

  • Solder Resistance Test: 260°C±5°C for 10±2 sec.
  • Solderability Test: 230°C±5°C for 5 sec.
  • Pull Test: 1kg in axial lead direction for 10 sec.
  • Bend Test: 0.5Kg Weight Applied To Each Lead, Bending Arcs 90°C±5°C for 3 times
  • High Temperature Reverse Bias Test: TA=100°C for 1000 Hours at VR=80% Rated VR
  • Forward Operation Life Test: TA=25°C Rated Average Rectified Current
  • Intermittent Operation Life Test: On state: 5 min with rated IRMS, Power Off state: 5 min with Cool Forced Air, On and off for 1000 cycles
  • Pressure Cooker Test: 15 PSIG, TA=121°C, 4 hours
  • Temperature Cycling Test: -55°C to +125°C; 30 Minutes For Dwelled Time, 5 minutes for transferred time, Total: 10 cycles
  • Thermal Shock Test: 0°C for 5 minutes, 100°C for 5 minutes, Total: 10 cycles
  • Forward Surge Test: 8.3ms Single Sale Sine-wave One Surge
  • Humidity Test: TA=65°C, RH=98% for 1000 hours
  • High Temperature Storage life Test: 150°C for 1000 Hours

Suggested Reflow Profile

  • Recommended peak temperature: over 245°C
  • If peak temperature is below 245°C, adjust parameters: time length of peak temperature (longer), time length of soldering (longer), thickness of solder paste (thicker)
  • Welding shall not exceed 2 times
  • Remark: lead-free solder paste (96.5 Sn/3.0 Ag/0.5Cu)

Packaging Information

  • Carrier Width (A): 3.15 mm ± 0.1 mm
  • Carrier Length (B): 2.77 mm ± 0.1 mm
  • Carrier Depth (C): 1.22 mm ± 0.1 mm
  • Sprocket Hole (d): 1.55 mm ± 0.05 mm
  • Reel Outside Diameter (D): 178.00 mm ± 2.0 mm
  • Reel Inner Diameter (D1): Min. 54.4 mm
  • Feed Hole Diameter (D2): 13.00 mm ± 0.5 mm
  • Sprocket Hole Position (E): 1.75 mm ± 0.1 mm
  • Punch Hole Position (F): 3.50 mm ± 0.1 mm
  • Punch Hole Pitch (P): 4.00 mm ± 0.1 mm
  • Sprocket Hole Pitch (P0): 4.00 mm ± 0.1 mm
  • Embossment Center (P1): 2.00 mm ± 0.1 mm
  • Overall Tape Thickness (T): 0.25 mm ± 0.1 mm
  • Tape Width (W): 8.00 mm ± 0.3 mm
  • Reel Width (W1): 19.50 mm ± 1.0 mm

Disclaimer

NextGen Component, Inc. reserves the right to make changes to the product(s) and/or information contained herein without notice. No liability is assumed as a result of their use or application. No rights under any patent accompany the sale of any such product(s) or information.

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