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- Single, Pre-Biased Bipolar Transistors(4,173)
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BAS21GW-QX
Diode 200 V 225mA Surface Mount SOD-123
Nexperia USA Inc.
MZX84C3V9LT1G
Zener Diodes 3.9V 250mW
onsemi
BAS85
Diode 30 V 200mA Surface Mount SOD-80 MiniMELF
Good-Ark Semiconductor
PDTC114ET215
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 MHz 250 mW Surface Mount SOT23-3 (TO-236)
NXP Semiconductors
2N7002K-7
N-Channel 60 V 380mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
Diodes Incorporated
FII50-12E
IGBT H BRIDGE 1200V 50A I4PAK5
IXYS
IXA40PG1200DHG-TUB
IGBT H BRIDGE 1200V 63A SMPD
IXYS
IXTA50N28T
MOSFET N-CH TO263
IXYS
IXTU1N80P
MOSFET N-CH TO251
IXYS
BUK9875-100A,115
MOSFET N-CH 100V 7A SOT-223
NXP
BSS84LT1
MOSFET P-CH 50V 130MA SOT-23
onsemi
IRLZ44NL
MOSFET N-CH 55V 47A TO262
Infineon Technologies
IRLZ34NL
MOSFET N-CH 55V 30A TO262
Infineon Technologies
C3M0032120K1
IC
Wolfspeed, Inc.
IRF3205ZPBFAKSA1
TRENCH 40<-<100V
Infineon Technologies
ZXMP10A17KTC
MOSFET P-CH 100V 2.4A TO252-2
Diodes Incorporated
MTW8N50E
TRANS MOSFET N-CH 500V 8A 3-PIN(
Motorola
MTW16N40E
TRANS MOSFET N-CH 400V 16A 3-PIN
Motorola
FSS145-TL-E
FSS145 - P-CHANNEL SILICON MOSFE
Sanyo
2SK1896
2SK1896 - NPN TRIPLE DIFFUSED PL
Sanyo
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What are Pre-biased bipolar transistors?
Pre-biased bipolar transistors include internal resistors that keep the device close to its bias or operating point when no input signal is present. This biasing enables the transistor to function more efficiently and generate a stable, undistorted output signal. Additionally, pre-biased transistors minimize the need for external circuit components, leading to lower project costs.
- Manufacturers
- Stocking Options
- Environmental Options
- Resistance - RDS(On)
- Test Condition
- Technology
- Td (on/off) @ 25°C
- Switching Energy
- Supplier Device Package
- Structure
- Speed
- SCR Type
- Reverse Recovery Time (trr)
- Resistor - Emitter Base (R2)
- Resistor - Base (R1)
- Resistance @ If, F
- Tolerance
- Regulator Current (Max)
- Rds On (Max) @ Id, Vgs
- Qualification
- Q @ Vr, F
- Power Dissipation (Max)
- Power - Output
- Power - Max
- Package / Case
- Operating Temperature - Junction
- Operating Temperature
- Number of SCRs, Diodes
- Voltage - Collector Emitter Breakdown (Max)
- Voltage - Zener (Nom) (Vz)
- Voltage - Test
- Voltage - Rated
- Voltage - Peak Reverse (Max)
- Voltage - On State (Vtm) (Max)
- Voltage - Off State
- Voltage - Limiting (Max)
- Voltage - Isolation
- Voltage - Gate Trigger (Vgt) (Max)
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Voltage - Cutoff (VGS off) @ Id
- NTC Thermistor
- Voltage - Breakover
- Voltage - Breakdown (V(BR)GSS)
- Voltage - Anode - Cathode (Vak)(Max)
- Voltage
- Vgs(th) (Max) @ Id
- Vgs (Max)
- Vce(on) (Max) @ Vge, Ic
- Vce Saturation (Max) @ Ib, Ic
- Type
- Triac Type
- Transistor Type
- Current - Collector Pulsed (Icm)
- Current - Test
- Current - Reverse Leakage @ Vr
- Current - Peak Output
- Current - On State (It (RMS)) (Max)
- Current - On State (It (AV)) (Max)
- Current - Off State (Max)
- Current - Non Rep. Surge 50, 60Hz (Itsm)
- Current - Max
- Current - Hold (Ih) (Max)
- Current - Gate Trigger (Igt) (Max)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Current - Continuous Drain (Id) @ 25°C
- Current Drain (Id) - Max
- Current - Collector Cutoff (Max)
- Current - Collector (Ic) (Max)
- Current - Breakover
- Current - Average Rectified (Io) (per Diode)
- Current - Average Rectified (Io)
- Current
- Configuration
- Capacitance Ratio Condition
- Capacitance Ratio
- Capacitance @ Vr, F
- Base Product Number
- Gate Charge
- Noise Figure (dB Typ @ f)
- Noise Figure
- Mounting Type
- Mfr
- Input Type
- Input Capacitance (Ciss) (Max) @ Vds
- Input Capacitance (Cies) @ Vce
- Input
- Impedance (Max) (Zzt)
- IGBT Type
- Grade
- Gate Charge (Qg) (Max) @ Vgs
- Applications
- Gain
- Frequency - Transition
- Frequency
- FET Type
- FET Feature
- Drive Voltage (Max Rds On, Min Rds On)
- Drain to Source Voltage (Vdss)
- Diode Type
- Diode Configuration
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Current Rating (Amps)
