Infineon Technologies BSC600N25NS3GATMA1

View All Single, Pre-Biased Bipolar Transistors by Infineon Technologies

Part Number:
BSC600N25NS3GATMA1
Manufacturer:
Infineon Technologies
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
RoHS Compliant
Datasheet:
BSC600N25NS3GATMA1_Datesheet
Description:
MOSFET N-CH 250V 25A TDSON-8-1
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Specifications

Type

Paramete

Type

Paramete

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Grade

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 90µA

FET Feature

Rds On (Max) @ Id, Vgs

60mOhm @ 25A, 10V

Vgs (Max)

±20V

FET Type

N-Channel

Package / Case

8-PowerTDFN

Operating Temperature

-55°C ~ 150°C (TJ)

Supplier Device Package

PG-TDSON-8-1

Technology

MOSFET (Metal Oxide)

Qualification

Mounting Type

Surface Mount

Gate Charge (Qg) (Max) @ Vgs

29 nC @ 10 V

Drain to Source Voltage (Vdss)

250 V

Input Capacitance (Ciss) (Max) @ Vds

2350 pF @ 100 V

Power Dissipation (Max)

125W (Tc)

Overview

BSC600N25NS3GATMA1 – Complete Datasheet Summary

1. Basic Device Information

Part Number: BSC600N25NS3GATMA1
Manufacturer: Infineon Technologies
Technology: OptiMOSTM 3, N‑Channel Silicon Power MOSFET
Package: PG‑TDSON‑8 (8‑pin thermally enhanced TDSON)
Marking Code: 600N25NS
Compliance: RoHS, Halogen‑Free (IEC 61249‑2‑21), Pb‑free plating
Qualification: JEDEC J‑STD20 / JESD22 qualified
Document: Rev. 2.5 (2022‑11‑09)
Application: High‑frequency switching, synchronous rectification, power conversion

2. Key Features

Ultra‑low RDS(on): 50 mΩ typ, 60 mΩ max
Excellent FOM (gate charge × RDS(on)) for high‑efficiency designs
Low gate charge for fast switching
Rugged avalanche capability
Wide temperature range: −55°C to +150°C
Thermally enhanced TDSON‑8 package
Normally‑enhanced N‑channel mode

3. Absolute Maximum Ratings (TC = 25°C)

Parameter	Symbol	Value	Unit
Drain‑Source Voltage	VDS	250	V
Gate‑Source Voltage	VGS	±20	V
Continuous Drain Current (TC = 25°C)	ID	25	A
Continuous Drain Current (TC = 100°C)	ID	16	A
Pulsed Drain Current	ID,pulse	100	A
Single‑Pulse Avalanche Energy	EAS	210	mJ
Total Power Dissipation	Ptot	125	W
Reverse Diode dv/dt	dv/dt	10	kV/μs
Operating / Storage Temp	Tj, Tstg	−55 to +150	°C

4. Thermal Characteristics

Parameter	Symbol	Value	Unit
Junction‑to‑Case Thermal Resistance	RthJC	1	K/W
Junction‑to‑Ambient (min footprint)	RthJA	75	K/W

5. Electrical Characteristics (Tj = 25°C, VGS = 10 V)

Static Parameters

Parameter	Min	Typ	Max	Unit
Drain‑Source Breakdown Voltage (VGS = 0 V)	250	—	—	V
Gate Threshold Voltage (VDS = VGS, ID = 90 μA)	2	3	4	V
Drain‑Source On‑Resistance (ID = 25 A)	—	50	60	mΩ
Zero‑Gate Voltage Leakage (VDS = 200 V)	—	0.1	1	μA
Gate‑Source Leakage (VGS = 20 V)	—	1	100	nA
Transconductance (ID = 25 A)	25	49	—	S

Dynamic Parameters

Parameter	Typ	Max	Unit
Input Capacitance (VDS = 100 V)	1770	2350	pF
Output Capacitance	112	149	pF
Reverse Transfer Capacitance	3	—	pF
Turn‑On Delay Time	10	—	ns
Rise Time	10	—	ns
Turn‑Off Delay Time	22	—	ns
Fall Time	8	—	ns
Total Gate Charge (Qg)	22	29	nC
Gate‑Source Charge (Qgs)	8	—	nC
Gate‑Drain Charge (Qgd)	2	—	nC

Reverse Diode Characteristics

Parameter	Typ	Max	Unit
Diode Forward Voltage (IF = 25 A)	0.9	1.2	V
Reverse Recovery Time	114	—	ns
Reverse Recovery Charge	700	—	nC

6. Pin Configuration (PG‑TDSON‑8, Top View)

Pin(s)	Name	Function
1	Drain	Drain connection
2–3	Drain	Drain connection
4	Gate	Gate drive input
5–8	Source	Source connection
Exposed Pad	Drain	Drain (thermal pad)

7. Package Dimensions (PG‑TDSON‑8)

Parameter	Min	Max	Unit
Length (D)	4.80	5.35	mm
Width (E)	5.70	6.10	mm
Thickness (A)	0.90	1.20	mm
Lead Pitch (e)	—	1.27	mm

8. Typical Applications

High‑frequency DC‑DC converters
Synchronous rectifiers
Switch‑mode power supplies (SMPS)
Industrial power systems
Solar inverters & UPS
Motor drive & inverter circuits

9. Reliability & Packaging

ESD robust design
Halogen‑free & RoHS compliant
Tape‑and‑reel packaging (ATMA1 suffix)
Reflow solder compatible (standard SMT profile)

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