Categories
- Single, Pre-Biased Bipolar Transistors(217)




Leave Us A Message!
We`re not around but we still want to hear from you! Leave us a note:

BSP129L6906
N-CHANNEL POWER MOSFET
Infineon Technologies

BSP317PH6327XTSA1
MOSFET P-CH 250V 430MA SOT223-4
Infineon Technologies

BSC0902NSATMA1
MOSFET N-CH 30V 24A/100A TDSON
Infineon Technologies

BSP129H6327XTSA1
MOSFET N-CH 240V 350MA SOT223-4
Infineon Technologies

PTFB193408SVV1XWSA1
RF MOSFET LDMOS 30V H-34275G-6
Infineon Technologies

BSC0921NDIATMA1
MOSFET 2N-CH 30V 17A/31A TISON8
Infineon Technologies

BCR505E6778HTSA1
TRANS PREBIAS NPN 50V SOT23
Infineon Technologies

BCR503E6393HTSA1
TRANS PREBIAS NPN 50V SOT23
Infineon Technologies

BCR198E6393HTSA1
TRANS PREBIAS PNP 50V SOT23
Infineon Technologies

BCR183E6359HTMA1
TRANS PREBIAS NPN 50V SOT23
Infineon Technologies

BCR148E6393HTSA1
TRANS PREBIAS NPN 50V SOT23
Infineon Technologies

BCR133E6393HTSA1
TRANS PREBIAS NPN 50V SOT23
Infineon Technologies

BCR116E6393HTSA1
TRANS PREBIAS NPN 50V SOT23
Infineon Technologies

BCR 148W H6433
TRANS PREBIAS NPN 50V SOT323
Infineon Technologies

BCR141WH6327XTSA1
TRANS PREBIAS NPN 50V SOT323
Infineon Technologies

BCR116WH6327XTSA1
TRANS PREBIAS NPN 50V SOT323
Infineon Technologies

BCR112WH6327XTSA1
TRANS PREBIAS NPN 50V SOT323
Infineon Technologies

BCR148E6433HTMA1
TRANS PREBIAS NPN 50V SOT23
Infineon Technologies

BCR 569 E6327
TRANS PREBIAS PNP 50V SOT23
Infineon Technologies

BCR 519 E6327
TRANS PREBIAS NPN 50V SOT23
Infineon Technologies
- 1
- 2
- 3
- 4
- 5
- 6
- 11
What are Pre-biased bipolar transistors?
Pre-biased bipolar transistors include internal resistors that keep the device close to its bias or operating point when no input signal is present. This biasing enables the transistor to function more efficiently and generate a stable, undistorted output signal. Additionally, pre-biased transistors minimize the need for external circuit components, leading to lower project costs.
- Manufacturers
- Stocking Options
- Environmental Options
- Qualification
- Switching Energy
- Supplier Device Package
- Structure
- Speed
- SCR Type
- Reverse Recovery Time (trr)
- Resistor - Emitter Base (R2)
- Resistor - Base (R1)
- Resistance @ If, F
- Rds On (Max) @ Id, Vgs
- Td (on/off) @ 25°C
- Power Dissipation (Max)
- Power - Output
- Power - Max
- Package / Case
- Operating Temperature - Junction
- Operating Temperature
- Number of SCRs, Diodes
- NTC Thermistor
- Noise Figure
- Voltage - Collector Emitter Breakdown (Max)
- Voltage - Zener (Nom) (Vz)
- Voltage - Test
- Voltage - Rated
- Voltage - Peak Reverse (Max)
- Voltage - On State (Vtm) (Max)
- Voltage - Off State
- Voltage - Gate Trigger (Vgt) (Max)
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Mounting Type
- Voltage - Breakover
- Vgs(th) (Max) @ Id
- Vgs (Max)
- Vce(on) (Max) @ Vge, Ic
- Vce Saturation (Max) @ Ib, Ic
- Transistor Type
- Tolerance
- Test Condition
- Technology
- Current - Gate Trigger (Igt) (Max)
- Current Rating (Amps)
- Current - Test
- Current - Reverse Leakage @ Vr
- Current - Peak Output
- Current - On State (It (RMS)) (Max)
- Current - On State (It (AV)) (Max)
- Current - Off State (Max)
- Current - Non Rep. Surge 50, 60Hz (Itsm)
- Current - Max
- Current - Hold (Ih) (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Current - Continuous Drain (Id) @ 25°C
- Current - Collector Pulsed (Icm)
- Current - Collector Cutoff (Max)
- Current - Collector (Ic) (Max)
- Current - Breakover
- Current - Average Rectified (Io) (per Diode)
- Current - Average Rectified (Io)
- Configuration
- Capacitance @ Vr, F
- Gate Charge
- Mfr
- Input Type
- Input Capacitance (Ciss) (Max) @ Vds
- Input Capacitance (Cies) @ Vce
- Input
- Impedance (Max) (Zzt)
- IGBT Type
- Grade
- Gate Charge (Qg) (Max) @ Vgs
- Base Product Number
- Gain
- Frequency - Transition
- Frequency
- FET Type
- FET Feature
- Drive Voltage (Max Rds On, Min Rds On)
- Drain to Source Voltage (Vdss)
- Diode Type
- Diode Configuration