BSC0902NSATMA1 Model Information

Part Number: BSC0902NSATMA1

Manufacturer: Infineon Technologies AG

Product Line: OptiMOS™ Power-MOSFET

Voltage Rating: 30 V

Package Type: PG-TDSON-8

Marking: 0902NS

Related Links: Infineon Technologies Official Website

Key Features

• Optimized for High Performance Buck Converter
• Very Low On-Resistance (RDS(on)) @ VGS = 4.5 V
• 100% Avalanche Tested
• Superior Thermal Resistance
• Qualified According to JEDEC Standards for Target Applications
• N-Channel
• Pb-Free Lead Plating; RoHS Compliant
• Halogen-Free According to IEC61249-2-21

Key Performance Parameters

• Drain-Source Voltage (VDS): 30 V
• Continuous Drain Current (ID): 106 A (at VGS = 4.5 V, Tc = 25°C)
• Pulsed Drain Current (Iopd): 424 A (at Tc = 25°C)
• Avalanche Current (IAS): 50 A (at Tc = 25°C)
• Avalanche Energy (EAS): 40 mJ (at ID = 40 A, RDS(on) = 25 mΩ)
• Gate-Source Voltage (VGS): ±20 V
• Power Dissipation (Ptot): 48 W (at Tc = 25°C)
• Operating and Storage Temperature (T, Tstg): -55°C to +150°C

Thermal Characteristics

• Thermal Resistance, Junction-Case (Bottom) (Rθjc): 2.6 K/W
• Thermal Resistance, Junction-Case (Top) (Rθjc): 20 K/W
• Thermal Resistance, Junction-Ambient (Rθja): 50 K/W (on a 40 mm x 40 mm x 1.5 mm FR4 PCB with 6 cm² copper area)

Electrical Characteristics

Static Characteristics

• Drain-Source Breakdown Voltage (V(BR)DSS): 30 V (at VGS = 0 V, ID = 1 mA)
• Gate Threshold Voltage (VGS(th)): 1.2 V to 2.0 V (at VDS = VGS, ID = 250 μA)
• Zero Gate Voltage Drain Current (IDSS): 0.1 μA to 1.0 μA (at VDS = 30 V, VGS = 0 V, T = 25°C)
• Gate-Source Leakage Current (IGSS): 10 nA to 100 nA (at VDS = 20 V, VGS = 0 V)
• Drain-Source On-State Resistance (RDS(on)): 2.2 mΩ to 3.5 mΩ (at VGS = 4.5 V, ID = 30 A)
• Gate Resistance (Rg): 0.5 Ω to 1.8 Ω
• Transconductance (gm): 55 S to 1110 S (at |VDS| > 2|VGS|/ID|, ID = 30 A)

Dynamic Characteristics

• Input Capacitance (Ciss): 1700 pF to 2261 pF (at VGS = 0 V, VDS = 15 V, f = 1 MHz)
• Output Capacitance (Coss): 600 pF to 798 pF (at VGS = 0 V, VDS = 15 V, f = 1 MHz)
• Reverse Transfer Capacitance (Crss): 88 pF (at VGS = 0 V, VDS = 15 V, f = 1 MHz)
• Turn-On Delay Time (td(on)): 4 ns (at VGS = 15 V, VDS = 10 V, ID = 30 A, Rg,int = 1.6 Ω)
• Rise Time (tr): 5 ns (at VGS = 15 V, VDS = 10 V, ID = 30 A, Rg,int = 1.6 Ω)
• Turn-Off Delay Time (td(off)): 21 ns (at VGS = 15 V, VDS = 10 V, ID = 30 A, Rg,int = 1.6 Ω)
• Fall Time (tf): 4 ns (at VGS = 15 V, VDS = 10 V, ID = 30 A, Rg,int = 1.6 Ω)

Gate Charge Characteristics

• Gate to Source Charge (Qgs): 4.4 nC to 5.9 nC (at VGS = 15 V, ID = 30 A, VDS = 0 to 4.5 V)
• Gate Charge at Threshold (Qth): 2.7 nC (at VGS = 15 V, ID = 30 A, VDS = 0 to 4.5 V)
• Gate to Drain Charge (Qgd): 4.0 nC to 5.2 nC (at VGS = 15 V, ID = 30 A, VDS = 0 to 4.5 V)
• Switching Charge (Qsw): 5.6 nC (at VGS = 15 V, ID = 30 A, VDS = 0 to 4.5 V)
• Gate Charge Total (Qg): 13 nC to 17 nC (at VGS = 15 V, ID = 30 A, VDS = 0 to 4.5 V)
• Gate Plateau Voltage (Vg plateau): 2.6 V (at VGS = 15 V, ID = 30 A, VDS = 0 to 4.5 V)
• Output Charge (Qoss): 16 nC to 21 nC (at VGS = 15 V, VDS = 0 V)

Reverse Diode Characteristics

• Diode Continuous Forward Current (IF): 44 A (at Tc = 25°C)
• Diode Pulse Current (IFP): 424 A (at Tc = 25°C)
• Diode Forward Voltage (VF): 0.83 V to 1.1 V (at VDS = 0 V, ID = 30 A, T = 25°C)
• Reverse Recovery Charge (Qrr): 15 nC (at VRR = 15 V, ID = IDP, di/dt = 400 A/μs)

Package Outlines

• Package Type: PG-TDSON-8
• Dimensions:A: 0.90 mm to 1.20 mmA1: 0.15 mm to 0.35 mmD: 4.80 mm to 5.35 mmD1: 0.03 mm to 0.23 mmE: 5.70 mmE1: 5.90 mm to 6.10 mmE2: 3.88 mm to 4.31 mm