Product Specification Summary for BAV99

Basic Information

• Manufacturer: Nexperia
• Part Number: BAV99
• Package Type: SOT23
• Date of Release: July 1, 2022

General Description

• Type: High-speed Switching Diode
• Encapsulation: Small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package

Features and Benefits

• High Switching Speed: Reverse recovery time (trr) ≤ 4 ns
• Low Capacitance: Cd ≤ 1.5 pF
• Low Leakage Current
• Reverse Voltage: VR ≤ 100V
• Small SMD Plastic Packages

Applications

• High-Speed Switching
• Reverse Polarity Protection
• General-Purpose Switching

Quick Reference Data

• Reverse Current (IR): 0.5 µA max at VR = 80V, Tamb = 25°C
• Reverse Voltage (VR): 100V max
• Reverse Recovery Time (trr): 4 ns max at IF = 10 mA, IR = 10 mA, IR(meas) = 1 mA, RL = 100Ω, Tamb = 25°C

Pinning Information

• A1: Anode (Diode 1)
• K2: Cathode (Diode 2)
• K1, A2: Cathode (Diode 1) and Anode (Diode 2)

Ordering Information

• Package: SOT23
• Type Number: BAV99
• Description: Plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body

Marking

• Marking Code: A7% [1]
• [1] %= Placeholder for manufacturing site code

Limiting Values

• Reverse Voltage (VR): 100V max
• Repetitive Peak Reverse Voltage (VRRM): 215 mA max (single diode loaded)
• Forward Current (IF): 125 mA max (double diode loaded), 500 mA max (single diode loaded)
• Repetitive Peak Forward Current (IFRM): 4A max (tp = 1 µs, square wave, Tj(init) = 25°C)
• Non-Repetitive Peak Forward Current (IFSM): 1A max (tp = 1 ms, square wave, Tj(init) = 25°C), 0.5A max (tp = 1 s, square wave, Tj(init) = 25°C)
• Total Power Dissipation (Ptot): 250 mW max (Tamb ≤ 25°C)
• Junction Temperature (Tj): 150°C max
• Ambient Temperature (Tamb): -65°C to 150°C
• Storage Temperature (Tstg): -65°C to 150°C

Thermal Characteristics

• Thermal Resistance from Junction to Ambient (Rth(j-a)): 500 K/W max (single diode loaded, in free air)
• Thermal Resistance from Junction to Solder Point (Rth(j-sp)): 360 K/W typ

Characteristics

• Forward Voltage (VF):715 mV max at IF = 1 mA, Tamb = 25°C855 mV max at IF = 10 mA, Tamb = 25°C1V max at IF = 50 mA, Tamb = 25°C1.25V max at IF = 150 mA, Tamb = 25°C
• Reverse Current (IR):30 nA max at VR = 25V, Tamb = 25°C0.5 µA max at VR = 80V, Tamb = 25°C30 µA max at VR = 25V, Tj = 150°C50 µA max at VR = 80V, Tj = 150°C
• Diode Capacitance (Cd): 1.5 pF max at VR = 0V, f = 1 MHz, Tamb = 25°C
• Reverse Recovery Time (trr): 4 ns max at IF = 10 mA, IR = 10 mA, IR(meas) = 1 mA, RL = 100Ω, Tamb = 25°C
• Peak Forward Recovery Voltage (VFRM): 1.75V max at IF = 10 mA, tr = 20 ns, Tamb = 25°C

Package Outline

• Dimensions (mm):Length: 3.0 mmWidth: 1.1 mmHeight: 0.9 mm

Soldering

• Reflow Soldering Footprint: Dimensions provided for SOT23 package
• Wave Soldering Footprint: Dimensions provided for SOT23 package