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- Single, Pre-Biased Bipolar Transistors(517)
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BAS21GW-QX
Diode 200 V 225mA Surface Mount SOD-123
Nexperia USA Inc.
BUK7J1R0-40HX
BUK7J1R0-40H/SOT1023/4 LEADS
Nexperia USA Inc.
BSS87,115
MOSFET N-CH 200V 400MA SOT89
Nexperia USA Inc.
BUK9875-100A/CUX
MOSFET N-CH 100V 7A SOT223
Nexperia USA Inc.
2N7002NXAKR
MOSFET N-CH 60V 190MA TO236AB
Nexperia USA Inc.
PDTC143ZU-QX
TRANS PREBIAS NPN 50V SOT323
Nexperia USA Inc.
PDTD123YT/APGVL
TRANS PREBIAS NPN 50V TO236AB
Nexperia USA Inc.
PDTA114EU/SNF
TRANS PREBIAS PNP 50V 0.1A SC70
Nexperia USA Inc.
PDTA114EU/SNX
TRANS PREBIAS PNP 50V 0.1A SC70
Nexperia USA Inc.
PDTA124XT/APGR
TRANS PREBIAS PNP 50V TO236AB
Nexperia USA Inc.
PDTC114EU/MIF
TRANS PREBIAS NPN 50V SOT323
Nexperia USA Inc.
PDTA114EU/MIF
TRANS PREBIAS PNP 50V SOT323
Nexperia USA Inc.
PDTC144ET/DG/B2,21
TRANS PREBIAS NPN 50V TO236AB
Nexperia USA Inc.
PDTC144ET/DG/B4,21
TRANS PREBIAS NPN 50V TO236AB
Nexperia USA Inc.
PDTC114ET/DG/B4,21
TRANS PREBIAS NPN 50V TO236AB
Nexperia USA Inc.
PDTC144EU/ZLX
TRANS PREBIAS
Nexperia USA Inc.
PDTC143ZU/ZLX
TRANS PREBIAS
Nexperia USA Inc.
PDTC143TU/ZLX
TRANS PREBIAS
Nexperia USA Inc.
PDTC143TU/ZLF
TRANS PREBIAS
Nexperia USA Inc.
PDTC143EU/ZLX
TRANS PREBIAS
Nexperia USA Inc.
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What are Pre-biased bipolar transistors?
Pre-biased bipolar transistors include internal resistors that keep the device close to its bias or operating point when no input signal is present. This biasing enables the transistor to function more efficiently and generate a stable, undistorted output signal. Additionally, pre-biased transistors minimize the need for external circuit components, leading to lower project costs.
- Manufacturers
- Stocking Options
- Environmental Options
- Resistance - RDS(On)
- Test Condition
- Technology
- Td (on/off) @ 25°C
- Switching Energy
- Supplier Device Package
- Structure
- Speed
- SCR Type
- Reverse Recovery Time (trr)
- Resistor - Emitter Base (R2)
- Resistor - Base (R1)
- Resistance @ If, F
- Tolerance
- Regulator Current (Max)
- Rds On (Max) @ Id, Vgs
- Qualification
- Q @ Vr, F
- Power Dissipation (Max)
- Power - Output
- Power - Max
- Package / Case
- Operating Temperature - Junction
- Operating Temperature
- Number of SCRs, Diodes
- Voltage - Collector Emitter Breakdown (Max)
- Voltage - Zener (Nom) (Vz)
- Voltage - Test
- Voltage - Rated
- Voltage - Peak Reverse (Max)
- Voltage - On State (Vtm) (Max)
- Voltage - Off State
- Voltage - Limiting (Max)
- Voltage - Isolation
- Voltage - Gate Trigger (Vgt) (Max)
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Voltage - Cutoff (VGS off) @ Id
- NTC Thermistor
- Voltage - Breakover
- Voltage - Breakdown (V(BR)GSS)
- Voltage - Anode - Cathode (Vak)(Max)
- Voltage
- Vgs(th) (Max) @ Id
- Vgs (Max)
- Vce(on) (Max) @ Vge, Ic
- Vce Saturation (Max) @ Ib, Ic
- Type
- Triac Type
- Transistor Type
- Current - Collector Pulsed (Icm)
- Current - Test
- Current - Reverse Leakage @ Vr
- Current - Peak Output
- Current - On State (It (RMS)) (Max)
- Current - On State (It (AV)) (Max)
- Current - Off State (Max)
- Current - Non Rep. Surge 50, 60Hz (Itsm)
- Current - Max
- Current - Hold (Ih) (Max)
- Current - Gate Trigger (Igt) (Max)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Current - Continuous Drain (Id) @ 25°C
- Current Drain (Id) - Max
- Current - Collector Cutoff (Max)
- Current - Collector (Ic) (Max)
- Current - Breakover
- Current - Average Rectified (Io) (per Diode)
- Current - Average Rectified (Io)
- Current
- Configuration
- Capacitance Ratio Condition
- Capacitance Ratio
- Capacitance @ Vr, F
- Base Product Number
- Gate Charge
- Noise Figure (dB Typ @ f)
- Noise Figure
- Mounting Type
- Mfr
- Input Type
- Input Capacitance (Ciss) (Max) @ Vds
- Input Capacitance (Cies) @ Vce
- Input
- Impedance (Max) (Zzt)
- IGBT Type
- Grade
- Gate Charge (Qg) (Max) @ Vgs
- Applications
- Gain
- Frequency - Transition
- Frequency
- FET Type
- FET Feature
- Drive Voltage (Max Rds On, Min Rds On)
- Drain to Source Voltage (Vdss)
- Diode Type
- Diode Configuration
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Current Rating (Amps)
