Nexperia USA Inc. BUK9K35-60RAX

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Specifications
Type
Paramete
Type
Paramete
Technology
MOSFET (Metal Oxide)
Package / Case
SOT-1205, 8-LFPAK56
Input Capacitance (Ciss) (Max) @ Vds
1081pF @ 25V
Mounting Type
Surface Mount
Rds On (Max) @ Id, Vgs
32mOhm @ 5A, 10V
Drain to Source Voltage (Vdss)
60V
Configuration
2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C
22A (Ta)
Power - Max
38W (Ta)
Grade
Automotive
Operating Temperature
-55°C ~ 175°C (TJ)
Qualification
AEC-Q101
Vgs(th) (Max) @ Id
2.1V @ 1mA
FET Feature
Logic Level Gate
Supplier Device Package
LFPAK56D
Gate Charge (Qg) (Max) @ Vgs
7.8nC @ 5V
Overview

BUK9K35-60RA Complete Supplementary Datasheet Summary


1. Basic Device Identification


  • Full Part Number: BUK9K35-60RA
  • Manufacturer: Nexperia
  • Device Type: Dual N‑channel logic‑level MOSFET
  • Technology: Repetitive Avalanche ASFET
  • Qualification: AEC‑Q101 (automotive grade, 175 °C)
  • Status: Active, Production
  • Marking Code: 93560RA
  • Package: LFPAK56D (SOT1205), 8‑pin dual gull‑wing

2. Key Specifications (Quick Reference)


  • VDS: 60 V
  • RDS(on): Max 35 mΩ @ VGS = 5 V, ID = 5 A, 25 °C
  • Continuous ID: 22 A @ Tmb = 25 °C; 16 A @ 100 °C
  • Ptot: 38 W @ Tmb = 25 °C
  • Logic Level: VGS(th) typ 1.7 V (operates at 5 V drive)

3. Absolute Maximum Ratings


  • Drain‑Source Voltage (VDS): 60 V
  • Gate‑Source Voltage (VGS): ±10 V DC; ±15 V pulsed
  • Drain Current (ID): 22 A continuous; 90 A pulsed (tp ≤ 10 µs)
  • Power Dissipation (Ptot): 38 W
  • Junction Temperature (TJ): −55 °C to 175 °C
  • Storage Temperature (Tstg): −55 °C to 175 °C
  • Soldering Temp (Tsld(M)): 260 °C peak
  • Repetitive Avalanche Energy (EDS(AL)R): 28.6 mJ (ΔTJ ≤ 30 °C)
  • Single‑pulse Avalanche Energy (EDS(AL)S): 19.5 mJ

4. Thermal Characteristics


  • Rth(j‑mb) (junction to mounting base): 3.96 K/W (max)
  • Rth(j‑a) (junction to ambient): 95 K/W (typ)

5. Static Electrical Characteristics


  • V(BR)DSS: 60 V min @ ID = 250 µA, 25 °C
  • VGS(th): 1.4–2.1 V @ ID = 1 mA, 25 °C
  • IDSS: ≤1 µA @ VDS = 60 V, 25 °C; ≤500 µA @ 175 °C
  • IGSS: ≤100 nA @ VGS = ±10 V
  • RDS(on):

6. Dynamic Electrical Characteristics


  • Total Gate Charge (QG(tot)): 7.8 nC typ @ VGS = 5 V
  • Gate‑Drain Charge (QGD): 3 nC typ
  • Input Capacitance (Ciss): 811 pF typ @ VDS = 25 V
  • Turn‑On Delay (td(on)): 7.1 ns typ
  • Rise Time (tr): 11.3 ns typ
  • Turn‑Off Delay (td(off)): 14.9 ns typ
  • Fall Time (tf): 10.6 ns typ
  • Diode Forward Voltage (VSD): 0.78 V typ @ IS = 5 A
  • Reverse Recovery Time (trr): 17.6 ns typ

7. Pin Configuration (LFPAK56D, Top View)

表格


PinSymbolDescription
1S1Source 1
2G1Gate 1
3S2Source 2
4G2Gate 2
5D2Drain 2
6D2Drain 2
7D1Drain 1
8D1Drain 1

8. Core Features


  • Dual N‑channel in one compact package
  • Logic‑level drive (5 V)
  • AEC‑Q101 qualified to 175 °C
  • Repetitive avalanche rated (1 Bn events)
  • Copper‑clip LFPAK for high thermal performance
  • Gull‑wing leads for AOI and assembly robustness
  • Low RDS(on) and low QGD for high efficiency

9. Typical Applications


  • 12 V / 24 V / 48 V automotive systems
  • Repetitive avalanche inductive loads
  • Engine & transmission control
  • Automotive actuator drives
  • Auxiliary load switching

10. Package Dimensions (LFPAK56D, SOT1205)


  • Nominal size: 5.3 mm × 4.7 mm × 1.05 mm
  • Pitch: 1.27 mm
  • Gull‑wing leads for high manufacturability


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