Nexperia USA Inc. PEMD3,315

View All Single, Pre-Biased Bipolar Transistors by Nexperia USA Inc.

Part Number:
PEMD3,315
Manufacturer:
Nexperia USA Inc.
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
RoHS Compliant
Datasheet:
PEMD3,315_Datesheet
Description:
TRANS PREBIAS 1NPN 1PNP SOT666
In stock 8,000

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Specifications

Type

Paramete

Type

Paramete

Power - Max

300mW

Qualification

Resistor - Emitter Base (R2)

10kOhms

Voltage - Collector Emitter Breakdown (Max)

50V

Frequency - Transition

Supplier Device Package

SOT-666

Package / Case

SOT-563, SOT-666

Grade

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Resistor - Base (R1)

10kOhms

Current - Collector (Ic) (Max)

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 5mA, 5V

Mounting Type

Surface Mount

Current - Collector Cutoff (Max)

1µA

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 10mA

Overview

PEMD3 Datasheet Summary

Name: PEMD3%2C315
Brand: Nexperia USA Inc.
SKU: JM-PEMD3%2C315
Availability: InStock

Product Overview

The PEMD3 is a 50V, 100mA NPN/PNP resistor-equipped double transistor designed for low current applications. It features built-in bias resistors (R1 = 10kΩ, R2 = 10kΩ) and is housed in an ultra-small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. This device simplifies circuit design by reducing component count and pick-and-place costs.

Features

Output Current Capability: 100mA
Built-in Bias Resistors: R1 = 10kΩ, R2 = 10kΩ
Simplifies Circuit Design: Reduces component count and assembly costs
Suitable for Low Current Applications: Ideal for peripheral drivers and controlling IC inputs

Applications

Low Current Peripheral Driver: Suitable for driving low current devices
Controlling IC Inputs: Ideal for digital applications
Replaces General-Purpose Transistors: Can be used in various digital applications

Quick Reference Data

TableCopy

Parameter	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage (VCEO)	Open base	-	1	50	V
Output Current (IO)	-	-	-	100	mA
Bias Resistor 1 (R1)	[1]	7	10	13	kΩ
Bias Resistor Ratio (R2/R1)	[1]	0.8	1	1.2	- [1] See "Section 11: Test Information" for resistor calculation and test conditions.

Pinning Information

TableCopy

Pin	Symbol	Description
1	GND1	Ground (emitter) TR1
2	1	Input (base) TR1
3	02	Output (collector) TR2
4	12	Input (base) TR2
5	01	Output (collector) TR1

Ordering Information

Type Number: PEMD3
Package: SOT666 (plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6mm x 1.2mm x 0.55mm body)
Version: SOT666

Marking

Marking Code: D3

Limiting Values

TableCopy

Parameter	Conditions	Min	Max	Unit
Collector-Base Voltage (VCBO)	Open emitter	-	50	V
Collector-Emitter Voltage (VCEO)	Open base	-	50	V
Emitter-Base Voltage (VEBO)	Open collector	-40	-10	V
Input Voltage (VI)	-	-10	-40	V
Output Current (IO)	-	-	100	mA
Total Power Dissipation (Ptot)	Tamb ≤ 25°C	-	200	mW (per transistor)
Total Power Dissipation (Ptot)	Tamb ≤ 25°C	-	300	mW (per device)
Junction Temperature (Tj)	-	-	150	°C
Ambient Temperature (Tamb)	-65	150	°C
Storage Temperature (Tstg)	-65	150	°C

Thermal Characteristics

TableCopy

Parameter	Conditions	Min	Typ	Max	Unit
Junction to Ambient Thermal Resistance (Rth(j-a))	[1]	-	625	K/W (per transistor)
Junction to Ambient Thermal Resistance (Rth(j-a))	[1]	-	417	K/W (per device) [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35μm copper, tin-plated, and standard footprint.

Characteristics

TableCopy

Parameter	Conditions	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage (V(BR)CBO)	IC = 100 µA, IE = 0 A, Tamb = 25°C	50	-	-	V
Collector-Emitter Breakdown Voltage (V(BR)CEO)	IC = 2 mA, IB = 0 A, Tamb = 25°C	50	-	-	V
Collector-Base Cut-Off Current (ICBO)	VCB = 50 V, IE = 0 A, Tamb = 25°C	-	-	100	nA
Collector-Emitter Cut-Off Current (ICEO)	VCE = 30 V, IB = 0 A, Tamb = 25°C	-	-	1	µA
Emitter-Base Cut-Off Current (IEBO)	VEB = 5 V, IC = 0 mA, Tamb = 25°C	-	-	400	µA
DC Current Gain (hFE)	VCE = 5 V, IC = 5 mA, Tamb = 25°C	30	-	-	-
Collector-Emitter Saturation Voltage (VCEsat)	IC = 10 mA, IB = 0.5 mA, Tamb = 25°C	-	-	150	mV
Off-State Input Voltage (VI(off))	VCE = 5 V, IC = 100 µA, Tamb = 25°C	-	1.1	0.8	V
On-State Input Voltage (VI(on))	VCE = 0.3 V, IC = 10 mA, Tamb = 25°C	2.5	1.8	-	V
Bias Resistor 1 (R1)	[1]	7	10	13	kΩ
Bias Resistor Ratio (R2/R1)	[1]	0.8	1	1.2	- [1] See "Section 11: Test Information" for resistor calculation and test conditions.

Package Outline

Package Type: SOT666
Dimensions: 1.6mm x 1.2mm x 0.55mm body, 0.5 mm pitch, 6 leads

Soldering Information

Reflow Soldering Footprint: Suitable for SOT666 package
Solder Lands: 0.4mm (6x)
Placement Area: 1.075mm x 0.55mm
Solder Paste Occupied Area: 0.325mm x 0.375mm (4x)

Revision History

Document ID: PEMD3v.12
Release Date: 2022-12-28
Changes: Family data sheet reduced to single type data sheet. Product(s) changed to non-automotive qualification.

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