Nexperia USA Inc. 2N7002NXAKR

View All Single, Pre-Biased Bipolar Transistors by Nexperia USA Inc.

Part Number:
2N7002NXAKR
Manufacturer:
Nexperia USA Inc.
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
RoHS Compliant
Datasheet:
2N7002NXAKR_Datesheet
Description:
MOSFET N-CH 60V 190MA TO236AB
In stock 22,332

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Specifications

Type

Paramete

Type

Paramete

FET Feature

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60 V

Qualification

Vgs(th) (Max) @ Id

2.1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

TO-236AB

Current - Continuous Drain (Id) @ 25°C

190mA (Ta), 300mA (Tc)

FET Type

N-Channel

Input Capacitance (Ciss) (Max) @ Vds

20 pF @ 10 V

Technology

MOSFET (Metal Oxide)

Mounting Type

Surface Mount

Grade

Rds On (Max) @ Id, Vgs

4.5Ohm @ 100mA, 10V

Gate Charge (Qg) (Max) @ Vgs

0.43 nC @ 4.5 V

Power Dissipation (Max)

265mW (Ta), 1.33W (Tc)

Overview

2N7002NXAK Product Information

Name: 2N7002NXAKR
Brand: Nexperia USA Inc.
SKU: JM-2N7002NXAKR
Availability: InStock

General Description

The 2N7002NXAK is a 60V single N-channel Trench MOSFET designed for high performance and reliability in a compact SOT23 (TO-236AB) surface-mounted plastic package. Utilizing advanced Trench MOSFET technology, this device offers very fast switching capabilities and is ESD protected.

Features and Benefits

Very Fast Switching: Ensures efficient and rapid operation in various applications.
Trench MOSFET Technology: Provides enhanced performance and durability.
ESD Protected: Safeguards against electrostatic discharge, ensuring reliable operation.

Applications

Relay Driver: Ideal for driving relays in control circuits.
High-Speed Line Driver: Suitable for applications requiring high-speed signal transmission.
Low-Side Load Switch: Effective for switching loads in low-side configurations.
Switching Circuits: Applicable in a wide range of switching applications.

Quick Reference Data

Parameter	Conditions	Min	Typ	Max	Unit
VDss	Drain-source voltage (Tj = 25°C)	-	-	60	V
VGS	Gate-source voltage	-20	-	20	V
ID	Drain current (VGs = 10V; Tsp = 25°C)	1	-	300	mA
RDSon	Drain-source on-state resistance (VGs = 10V; ID = 100 mA; Tj = 25°C)	-	3	4.5	Ω

Pinning Information

Pin	Symbol	Description
1	G	Gate
2	S	Source
3	D	Drain

Ordering Information

Type Number	Package Name	Description	Version
2N7002NXAK	TO-236AB	Plastic surface-mounted package; 3 leads	SOT23

Marking

Type Number	Marking Code
2N7002NXAK	%CM Note: % is a placeholder for the manufacturing site code.

Limiting Values

Parameter	Conditions	Min	Max	Unit
VDss	Drain-source voltage (Tj = 25°C)	-	60	V
VGS	Gate-source voltage	-20	20	V
ID	Drain current (VGs = 10V; Tsp = 25°C)	-	300	mA
ID	Drain current (VGs = 10V; Tamb = 25°C)	-	190	mA
ID	Drain current (VGs = 10V; Tamb = 100°C)	1	120	mA
IDM	Peak drain current (Tamb = 25°C; single pulse; tp ≤ 10 μs)	-	760	mA
Ptot	Total power dissipation (Tamb = 25°C)	-	265	mW

Thermal Characteristics

Parameter	Conditions	Min	Typ	Max	Unit
Rth(j-a)	Thermal resistance from junction to ambient (free air)	-	410	470	K/W
Rth(j-sp)	Thermal resistance from junction to solder point	-	-	95	K/W

Characteristics

Static Characteristics

Parameter	Conditions	Min	Typ	Max	Unit
V(BR)DSS	Drain-source breakdown voltage (ID = 250 µA; VGS = 0 V; Tj = 25 °C)	60	-	-	V
VGSth	Gate-source threshold voltage (VDS = 60 V; VGS = 0 V; Tj = 25 °C)	1.1	1.6	2.1	V
IDSS	Drain leakage current (VDS = 60 V; VGS = 0 V; Tj = 25 °C)	-	-	1	µA
IDSS	Drain leakage current (VDS = 60 V; VGS = 0 V; Tj = 150 °C)	-	-	10	µA
IGSS	Gate leakage current (VGS = 20 V; VDS = 0 V; Tj = 25 °C)	-	-	2	µA
IGSS	Gate leakage current (VGS = -20 V; VDS = 0 V; Tj = 25 °C)	-	-	-2	µA
RDSon	Drain-source on-state resistance (VGs = 10 V; ID = 100 mA; Tj = 25 °C)	-	3	4.5	Ω
RDSon	Drain-source on-state resistance (VGs = 10 V; ID = 100 mA; Tj = 150 °C)	-	6.2	9.2	Ω

Dynamic Characteristics

Parameter	Conditions	Min	Typ	Max	Unit
QG(tot)	Total gate charge	-	0.33	0.43	nC
QGS	Gate-source charge	-	0.12	-	nC
QGD	Gate-drain charge	-	-	-	nC
Ciss	Input capacitance (VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C)	-	15	20	pF
Coss	Output capacitance	-	3.4	-	pF
Crss	Reverse transfer capacitance	-	-	-	pF

Package Outline

The 2N7002NXAK is available in a TO-236AB (SOT23) plastic surface-mounted package with 3 leads. The dimensions are as follows:

A: 1.1 mm max
A1: 0.1 mm
bp: 0.48 mm
C: 0.15 mm
D: 3.0 mm
E: 1.4 mm
e: 0.55 mm
e1: 0.45 mm
H: 1.9 mm
Q: 0.2 mm
V: 0.95 mm

Revision History

Data Sheet ID	Release Date	Data Sheet Status	Change Notice	Supersedes
2N7002NXAK v.1	2019-07-01	Product Data Sheet	-

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