Infineon Technologies IRF540NPBF

View All Single, Pre-Biased Bipolar Transistors by Infineon Technologies

Part Number:
IRF540NPBF
Manufacturer:
Infineon Technologies
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
RoHS Compliant
Datasheet:
IRF540NPBF_Datesheet
Description:
MOSFET N-CH 100V 33A TO220AB
In stock 142,331

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Specifications

Type

Paramete

Type

Paramete

Input Capacitance (Ciss) (Max) @ Vds

1960 pF @ 25 V

Vgs (Max)

±20V

Grade

Qualification

Gate Charge (Qg) (Max) @ Vgs

71 nC @ 10 V

Technology

MOSFET (Metal Oxide)

FET Feature

Power Dissipation (Max)

130W (Tc)

Vgs(th) (Max) @ Id

4V @ 250µA

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Mounting Type

Through Hole

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

100 V

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

44mOhm @ 16A, 10V

Overview

IRF540NPBF Complete Datasheet Summary

1. Basic Identification

Parameter	Value
Manufacturer	Infineon / International Rectifier
Part Number	IRF540NPBF
Type	N‑Channel HEXFET® Power MOSFET
Package	TO‑220AB (Through‑Hole)
Lead Status	Lead‑Free (PbF)
RoHS	Compliant
Product Status	Active
Qualification	Industrial

2. Absolute Maximum Ratings (Tc = 25°C)

Parameter	Value	Unit
VDS	100	V
VGS	±20	V
ID (Continuous)	33	A
ID (at 100°C)	23	A
IDM (Pulsed Drain Current)	110	A
PD (Power Dissipation)	130	W
Linear Derating Factor	0.87	W/°C
IAR (Avalanche Current)	16	A
EAR (Repetitive Avalanche Energy)	13	mJ
dv/dt	7.0	V/ns
TJ Operating Range	-55 to +175	°C
TSTG Storage Range	-55 to +175	°C
Soldering Temperature	300 (1.6mm from case)	°C

3. Thermal Characteristics

Parameter	Value	Unit
RθJC (Junction‑to‑Case)	1.15	°C/W
RθCS (Case‑to‑Sink)	0.50	°C/W
RθJA (Junction‑to‑Ambient)	62	°C/W

4. Electrical Characteristics (TJ = 25°C)

Parameter	Min	Typ	Max	Unit	Condition
V(BR)DSS	100	–	–	V	VGS = 0 V, ID = 250 µA
VGS(th)	2.0	–	4.0	V	VDS = VGS, ID = 250 µA
RDS(on)	–	–	44	mΩ	VGS = 10 V, ID = 16 A
gfs	21	–	–	S	VDS = 50 V, ID = 16 A
IDSS	–	–	25	µA	VDS = 100 V, VGS = 0 V
IDSS (150°C)	–	–	250	µA	VDS = 80 V, VGS = 0 V
IGSS	–	–	±100	nA	VGS = ±20 V

5. Dynamic Characteristics

Parameter	Value	Unit	Condition
Qg (Total Gate Charge)	71	nC	VDS = 80 V, ID = 16 A
Qgs (Gate‑Source Charge)	14	nC	VGS = 10 V
Qgd (Miller Charge)	21	nC	VGS = 10 V
td(on)	11	ns	VDD = 50 V
tr	35	ns	VDD = 50 V
td(off)	39	ns	VDD = 50 V
tf	35	ns	VDD = 50 V
Ciss (Input Capacitance)	1960	pF	VDS = 25 V, VGS = 0 V
Coss (Output Capacitance)	250	pF	VDS = 25 V, VGS = 0 V
Crss (Reverse Transfer Capacitance)	40	pF	VDS = 25 V, VGS = 0 V

6. Body Diode Characteristics

Parameter	Value	Unit	Condition
IS (Continuous Diode Current)	33	A	–
ISM (Pulsed Diode Current)	110	A	–
VSD (Diode Forward Voltage)	–	1.2	V	IS = 16 A
trr (Reverse Recovery Time)	115	ns	IF = 16 A
Qrr (Reverse Recovery Charge)	505	nC	di/dt = 100 A/µs

7. Avalanche Characteristics

Parameter	Value	Unit	Condition
EAS (Single‑Pulse Avalanche Energy)	185	mJ	IAS = 16 A, L = 1.5 mH
EAR (Repetitive Avalanche Energy)	13	mJ	–

8. Key Features

N‑channel enhancement mode power MOSFET
VDSS = 100 V, ultra‑low RDS(on) = 44 mΩ max
High current capability: 33 A continuous
Fast switching speed
Dynamic dv/dt rating
Fully avalanche rated
175°C maximum junction temperature
Lead‑free, RoHS compliant package
Industry‑standard TO‑220AB package

9. Typical Applications

Switching power supplies
DC‑DC converters
Motor drive & control
Power inverters
Solar inverters
UPS systems
Industrial power control
Automotive power systems

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