Name: IRF3205STRLPBF
Brand: Infineon Technologies
SKU: JM-IRF3205STRLPBF
Availability: InStock

Infineon Technologies IRF3205STRLPBF

View All Single FETs, MOSFETs by Infineon Technologies

Part Number:
IRF3205STRLPBF
Manufacturer:
Infineon Technologies
Category:
Single FETs, MOSFETs
RoHs:
RoHS Compliant
Datasheet:
IRF3205STRLPBF_Datesheet
Description:
MOSFET N-CH 55V 110A D2PAK
In stock 1,430

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Specifications

Type

Paramete

Type

Paramete

Qualification

Drain to Source Voltage (Vdss)

55 V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Rds On (Max) @ Id, Vgs

8mOhm @ 62A, 10V

Supplier Device Package

D2PAK

Gate Charge (Qg) (Max) @ Vgs

146 nC @ 10 V

Vgs(th) (Max) @ Id

4V @ 250µA

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

10V

Input Capacitance (Ciss) (Max) @ Vds

3247 pF @ 25 V

Operating Temperature

-55°C ~ 175°C (TJ)

Vgs (Max)

±20V

Power Dissipation (Max)

200W (Tc)

FET Feature

FET Type

N-Channel

Grade

Technology

MOSFET (Metal Oxide)

Overview

DESCRIPTION

· The IRF3205SPbF and IRF3205LPbF are Advanced HEXFET® Power MOSFETs from International Rectifier.

· These MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

· The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4, providing high power capability and low on-resistance.

· The through-hole version (IRF3205L) is available for low-profile applications.

FEATURES

· Advanced Process Technology.

· Ultra Low On-Resistance (RDS(on) = 8.0mΩ).

· Dynamic dv/dt Rating.

· 175°C Operating Temperature.

· Fast Switching.

· Fully Avalanche Rated.

· Lead-Free.

APPLICATIONS

· Suitable for high current applications due to low internal connection resistance.

· Can dissipate up to 2.0W in a typical surface mount application.

· Ideal for use in a wide variety of applications requiring efficient and reliable power MOSFETs.

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