Infineon Technologies IRF3205ZPBFAKSA1


- Part Number:
IRF3205ZPBFAKSA1
- Manufacturer:
- Category:
- RoHs:
Non-RoHS Compliant - Datasheet:
- Description:
TRENCH 40<-<100V
- In stock 0
IRF3205ZPbF / IRF3205ZSPbF / IRF3205ZLPbF HEXFET® Power MOSFET
Basic Device Information
- Part Type: N‑Channel HEXFET® Power MOSFET
- Key Part Numbers: IRF3205ZPbF, IRF3205ZSPbF, IRF3205ZLPbF
- Process & Features: Advanced process; ultra‑low on‑resistance; 175 °C junction operating temperature; fast switching; repetitive avalanche capability up to Tj(max); lead‑free (PbF)
- Package Options:
Key Electrical Specifications
| Parameter | Value | Unit | Condition |
|---|---|---|---|
| VDSS | 55 | V | VGS = 0 V |
| RDS(on), max | 6.5 | mΩ | VGS = 10 V, ID = 66 A |
| RDS(on), typ | 4.9 | mΩ | VGS = 10 V, ID = 66 A |
| VGS(th) | 2.0 – 4.0 | V | VDS = VGS, ID = 250 μA |
| ID @ TC = 25 °C | 75 | A | VGS = 10 V |
| ID @ TC = 100 °C | 78 | A | VGS = 10 V |
| IDM (Pulsed Drain Current) | 310 | A | Single pulse |
| gfs (Forward Transconductance), typ | 71 | S | VDS = 25 V, ID = 66 A |
| PD (Max Power Dissipation) | 170 | W | TC = 25 °C |
| EAS (Avalanche Energy, tested) | 250 | mJ |
Thermal Characteristics
| Parameter | Typ | Max | Unit |
|---|---|---|---|
| RθJC (Junction‑to‑Case) | – | 0.90 | °C/W |
| RθCS (Case‑to‑Sink) | 0.50 | – | °C/W |
| RθJA (Junction‑to‑Ambient, PCB) | – | 40 | °C/W |
| Operating TJ | -55 … +175 | °C | |
| Storage Tstg | -55 … +175 | °C |
Switching & Dynamic Characteristics (TJ = 25 °C)
| Parameter | Typ | Unit | Conditions |
|---|---|---|---|
| td(on) | 18 | ns | VDD = 28 V, ID = 66 A, VGS = 10 V |
| tr | 95 | ns | |
| td(off) | 45 | ns | |
| tf | 67 | ns | |
| Qg (Total Gate Charge) | 76 | nC | ID = 66 A, VDS = 44 V |
| Qgs | 21 | nC | |
| Qgd | 30 | nC | |
| trr (Reverse Recovery Time) | 28 | ns | |
| Qrr | 25 – 38 | nC | di/dt = 100 A/μs |
Capacitance Characteristics
| Parameter | Typ | Unit | Conditions |
|---|---|---|---|
| Ciss | 3450 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz |
| Coss | 550 | pF | |
| Crss | 310 | pF | |
| Coss(eff) | 640 | pF | VDS = 0 → 44 V |
Body Diode Ratings
| Parameter | Value | Unit |
|---|---|---|
| IS (Continuous Source Current) | 75 | A |
| ISM (Pulsed) | 440 | A |
| VSD (Forward Voltage), typ | 1.3 | V |
Absolute Maximum Ratings Summary
- Drain‑Source Voltage (VDSS): 55 V
- Gate‑Source Voltage (VGSS): ±20 V
- Continuous Drain Current (ID): 75 A @ 25 °C
- Pulsed Drain Current (IDM): 310 A
- Power Dissipation (PD): 170 W
- Operating Junction Temperature: -55 to +175 °C
- Storage Temperature: -55 to +175 °C
- Mounting Torque: For 6‑32 or M3 screws
Applications
- Motor speed control & drives
- DC–DC converters & inverters
- Power supplies & SMPS
- Automotive auxiliary systems
- Industrial automation
- Battery‑powered equipment
Notes:
- Data valid at TJ = 25 °C unless noted.
- Pulse width and duty cycle constraints apply for pulsed ratings.
- Refer to full datasheet for SOA, avalanche curves, and package outlines.
- This summary is based on Infineon/International Rectifier PD‑95129A datasheet.
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