Infineon Technologies IRF3205ZPBFAKSA1

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Specifications
Type
Paramete
Type
Paramete
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Supplier Device Package
PG-TO220-3-904
Power Dissipation (Max)
170W (Tc)
Qualification
-
FET Feature
-
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±20V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Package / Case
TO-220-3
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3450 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 66A, 10V
Drain to Source Voltage (Vdss)
55 V
Vgs(th) (Max) @ Id
4V @ 250µA
Overview

IRF3205ZPbF / IRF3205ZSPbF / IRF3205ZLPbF HEXFET® Power MOSFET


Basic Device Information


  • Part Type: N‑Channel HEXFET® Power MOSFET
  • Key Part Numbers: IRF3205ZPbF, IRF3205ZSPbF, IRF3205ZLPbF
  • Process & Features: Advanced process; ultra‑low on‑resistance; 175 °C junction operating temperature; fast switching; repetitive avalanche capability up to Tj(max); lead‑free (PbF)
  • Package Options:

Key Electrical Specifications



ParameterValueUnitCondition
VDSS55VVGS = 0 V
RDS(on), max6.5VGS = 10 V, ID = 66 A
RDS(on), typ4.9VGS = 10 V, ID = 66 A
VGS(th)2.0 – 4.0VVDS = VGS, ID = 250 μA
ID @ TC = 25 °C75AVGS = 10 V
ID @ TC = 100 °C78AVGS = 10 V
IDM (Pulsed Drain Current)310ASingle pulse
gfs (Forward Transconductance), typ71SVDS = 25 V, ID = 66 A
PD (Max Power Dissipation)170WTC = 25 °C
EAS (Avalanche Energy, tested)250mJ

Thermal Characteristics


ParameterTypMaxUnit
RθJC (Junction‑to‑Case)0.90°C/W
RθCS (Case‑to‑Sink)0.50°C/W
RθJA (Junction‑to‑Ambient, PCB)40°C/W
Operating TJ-55 … +175°C
Storage Tstg-55 … +175°C

Switching & Dynamic Characteristics (TJ = 25 °C)


ParameterTypUnitConditions
td(on)18nsVDD = 28 V, ID = 66 A, VGS = 10 V
tr95ns
td(off)45ns
tf67ns
Qg (Total Gate Charge)76nCID = 66 A, VDS = 44 V
Qgs21nC
Qgd30nC
trr (Reverse Recovery Time)28ns
Qrr25 – 38nCdi/dt = 100 A/μs

Capacitance Characteristics


ParameterTypUnitConditions
Ciss3450pFVGS = 0 V, VDS = 25 V, f = 1 MHz
Coss550pF
Crss310pF
Coss(eff)640pFVDS = 0 → 44 V

Body Diode Ratings


ParameterValueUnit
IS (Continuous Source Current)75A
ISM (Pulsed)440A
VSD (Forward Voltage), typ1.3V

Absolute Maximum Ratings Summary


  • Drain‑Source Voltage (VDSS): 55 V
  • Gate‑Source Voltage (VGSS): ±20 V
  • Continuous Drain Current (ID): 75 A @ 25 °C
  • Pulsed Drain Current (IDM): 310 A
  • Power Dissipation (PD): 170 W
  • Operating Junction Temperature: -55 to +175 °C
  • Storage Temperature: -55 to +175 °C
  • Mounting Torque: For 6‑32 or M3 screws

Applications


  • Motor speed control & drives
  • DC–DC converters & inverters
  • Power supplies & SMPS
  • Automotive auxiliary systems
  • Industrial automation
  • Battery‑powered equipment

Notes:


  • Data valid at TJ = 25 °C unless noted.
  • Pulse width and duty cycle constraints apply for pulsed ratings.
  • Refer to full datasheet for SOA, avalanche curves, and package outlines.
  • This summary is based on Infineon/International Rectifier PD‑95129A datasheet.
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