Infineon Technologies IRFR9024NTRPBF

View All Single, Pre-Biased Bipolar Transistors by Infineon Technologies

Part Number:
IRFR9024NTRPBF
Manufacturer:
Infineon Technologies
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
RoHS Compliant
Datasheet:
IRFR9024NTRPBF_Datesheet
Description:
MOSFET P-CH 55V 11A DPAK
In stock 23,302

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Specifications

Type

Paramete

Type

Paramete

Qualification

FET Feature

Input Capacitance (Ciss) (Max) @ Vds

350 pF @ 25 V

Operating Temperature

-55°C ~ 150°C (TJ)

FET Type

P-Channel

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Grade

Vgs (Max)

±20V

Power Dissipation (Max)

38W (Tc)

Vgs(th) (Max) @ Id

4V @ 250µA

Rds On (Max) @ Id, Vgs

175mOhm @ 6.6A, 10V

Supplier Device Package

TO-252AA (DPAK)

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Technology

MOSFET (Metal Oxide)

Gate Charge (Qg) (Max) @ Vgs

19 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drain to Source Voltage (Vdss)

55 V

Overview

IRFR9024NTRPBF Complete Datasheet Summary

1. Basic Identification

Parameter	Value
Manufacturer	Infineon / International Rectifier
Part Number	IRFR9024NTRPBF
Type	P‑Channel HEXFET® Power MOSFET
Package	D‑PAK (TO‑252AA), Surface Mount
Packing	Tape & Reel (TR)
Lead Status	Lead‑Free (PbF)
RoHS	Compliant
Product Status	Active
Qualification	Industrial
ECCN	EAR99

2. Absolute Maximum Ratings (Tc = 25°C)

Parameter	Value	Unit
VDS	-55	V
VGS	±20	V
ID (Continuous)	-11	A
IDM (Pulsed Drain Current)	-44	A
PD (Power Dissipation)	3.8	W
Linear Derating Factor	0.30	W/°C
IAR (Avalanche Current)	-6.6	A
EAR (Repetitive Avalanche Energy)	1.9	mJ
dv/dt	4.0	V/ns
TJ Operating Range	-55 to +175	°C
TSTG Storage Range	-55 to +175	°C

3. Thermal Characteristics

Parameter	Value	Unit
RθJC (Junction‑to‑Case)	2.63	°C/W
RθJA (Junction‑to‑Ambient)	50	°C/W

4. Electrical Characteristics (TJ = 25°C)

Parameter	Min	Typ	Max	Unit	Condition
V(BR)DSS	-55	–	–	V	VGS = 0 V, ID = -250 µA
VGS(th)	-2.0	–	-4.0	V	VDS = VGS, ID = -250 µA
RDS(on)	–	–	175	mΩ	VGS = -10 V, ID = -7.2 A
gfs	2.5	–	–	S	VDS = -25 V, ID = -7.2 A
IDSS	–	–	-25	µA	VDS = -55 V, VGS = 0 V
IDSS (150°C)	–	–	-250	µA	VDS = -44 V, VGS = 0 V
IGSS	–	–	±100	nA	VGS = ±20 V

5. Dynamic Characteristics

Parameter	Value	Unit	Condition
Qg (Total Gate Charge)	12.7	nC	VDS = -44 V, ID = -7.2 A
Qgs (Gate‑Source Charge)	3.5	nC	VGS = -10 V
Qgd (Miller Charge)	4.0	nC	VGS = -10 V
td(on)	12	ns	VDD = -25 V
tr	55	ns	VDD = -25 V
td(off)	45	ns	VDD = -25 V
tf	40	ns	VDD = -25 V
Ciss (Input Capacitance)	420	pF	VDS = -25 V, VGS = 0 V
Coss (Output Capacitance)	150	pF	VDS = -25 V, VGS = 0 V
Crss (Reverse Transfer Capacitance)	35	pF	VDS = -25 V, VGS = 0 V

6. Body Diode Characteristics

Parameter	Value	Unit	Condition
IS (Continuous Diode Current)	-11	A	–
ISM (Pulsed Diode Current)	-44	A	–
VSD (Diode Forward Voltage)	–	1.2	V	IS = -7.2 A
trr (Reverse Recovery Time)	120	ns	IF = -7.2 A
Qrr (Reverse Recovery Charge)	120	nC	di/dt = -100 A/µs

7. Avalanche Characteristics

Parameter	Value	Unit	Condition
EAS (Single‑Pulse Avalanche Energy)	62	mJ	IAS = -6.6 A, L = 1.0 mH
EAR (Repetitive Avalanche Energy)	1.9	mJ	–

8. Key Features

P‑channel enhancement mode power MOSFET
VDSS = -55 V, low RDS(on) = 175 mΩ max
High current capability: -11 A continuous
Fast switching speed
Dynamic dv/dt rating
Fully avalanche rated
175°C maximum junction temperature
Lead‑free, RoHS compliant
Industry‑standard D‑PAK (TO‑252AA) SMT package
Tape & reel packaging for automated assembly

9. Typical Applications

DC‑DC converters
Load switches
Power management
Battery protection circuits
Motor control
Industrial power systems
Consumer electronics
Portable power devices

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