Infineon Technologies IRFZ44NPBF


- Part Number:
IRFZ44NPBF
- Manufacturer:
- Category:
- RoHs:
RoHS Compliant - Datasheet:
IRFZ44NPBF_Datesheet - Description:
MOSFET N-CH 55V 49A TO220AB
- In stock 23,171
IRFZ44NPBF Complete Datasheet Summary
1. Basic Identification
| Parameter | Value |
|---|---|
| Manufacturer | Infineon / International Rectifier |
| Part Number | IRFZ44NPBF |
| Type | N‑Channel HEXFET Power MOSFET |
| Package | TO‑220 (Through‑Hole) |
| Lead Status | Lead‑Free (PbF) |
| Qualification | Industrial |
| RoHS | Compliant |
2. Absolute Maximum Ratings (Tc = 25°C)
| Parameter | Value | Unit |
|---|---|---|
| VDS | 55 | V |
| VGS | ±20 | V |
| ID (Continuous) | 49 | A |
| ID (at 100°C) | 35 | A |
| IDM (Pulsed) | 160 | A |
| IAR (Avalanche Current) | 25 | A |
| PD (Power Dissipation) | 94 | W |
| TJ Operating Range | -55 to +175 | °C |
| TSTG Storage Range | -55 to +175 | °C |
| dv/dt | 5.0 | V/ns |
3. Thermal Characteristics
| Parameter | Value | Unit |
|---|---|---|
| RθJC (Junction‑to‑Case) | 1.59 | °C/W |
| RθJA (Junction‑to‑Ambient) | 62 | °C/W |
| Linear Derating Factor | 0.63 | W/°C |
4. Electrical Characteristics (TJ = 25°C)
| Parameter | Min | Typ | Max | Unit | Condition |
|---|---|---|---|---|---|
| V(BR)DSS | 55 | – | – | V | VGS = 0 V, ID = 250 µA |
| VGS(th) | 2.0 | – | 4.0 | V | VDS = VGS, ID = 250 µA |
| RDS(on) | – | – | 17.5 | mΩ | VGS = 10 V, ID = 25 A |
| gfs | 19 | – | – | S | VDS = 25 V, ID = 25 A |
| IDSS | – | – | 25 | µA | VDS = 55 V, VGS = 0 V |
| IDSS (150°C) | – | – | 250 | µA | VDS = 44 V, VGS = 0 V |
| IGSS | – | – | ±100 | nA | VGS = ±20 V |
5. Dynamic Characteristics
| Parameter | Value | Unit |
|---|---|---|
| Qg (Total Gate Charge) | – | 63 nC |
| Qgs (Gate‑Source Charge) | – | 14 nC |
| Qgd (Miller Charge) | – | 23 nC |
| td(on) (Turn‑On Delay) | 12 | ns |
| tr (Rise Time) | 60 | ns |
| td(off) (Turn‑Off Delay) | 44 | ns |
| tf (Fall Time) | 45 | ns |
| Ciss (Input Capacitance) | 1470 | pF |
| Coss (Output Capacitance) | 360 | pF |
| Crss (Reverse Capacitance) | 88 | pF |
6. Body Diode Characteristics
| Parameter | Value | Unit |
|---|---|---|
| IS (Diode Current) | 49 | A |
| ISM (Pulsed Diode Current) | 160 | A |
| trr (Reverse Recovery Time) | 95 | ns |
| Qrr (Recovery Charge) | 170 | nC |
7. Avalanche Characteristics
| Parameter | Value | Unit |
|---|---|---|
| EAS (Single‑Pulse Avalanche Energy) | 1506 | mJ |
| EAR (Repetitive Avalanche Energy) | 9.4 | mJ |
8. Key Features
- N‑channel enhancement mode power MOSFET
- Ultra‑low RDS(on) = 17.5 mΩ max
- Fast switching speed
- 175°C maximum junction temperature
- Fully avalanche rated
- Lead‑free package (PbF)
- RoHS compliant
- TO‑220 through‑hole package
- High current capability: 49 A
9. Typical Applications
- Switching power supplies
- DC‑DC converters
- Motor control
- Power inverters
- Battery management
- Load switches
- Automotive and industrial power systems
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Infineon Technologies

Infineon Technologies
Infineon Technologies
Infineon Technologies

Infineon Technologies

Infineon Technologies

Infineon Technologies

Infineon Technologies

Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







