Infineon Technologies IRFZ44NPBF

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Specifications
Type
Paramete
Type
Paramete
FET Type
N-Channel
Grade
-
Rds On (Max) @ Id, Vgs
17.5mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Package / Case
TO-220-3
Qualification
-
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 250µA
Current - Continuous Drain (Id) @ 25°C
49A (Tc)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
94W (Tc)
Supplier Device Package
TO-220AB
Drain to Source Voltage (Vdss)
55 V
Input Capacitance (Ciss) (Max) @ Vds
1470 pF @ 25 V
Mounting Type
Through Hole
Overview

IRFZ44NPBF Complete Datasheet Summary


1. Basic Identification


ParameterValue
ManufacturerInfineon / International Rectifier
Part NumberIRFZ44NPBF
TypeN‑Channel HEXFET Power MOSFET
PackageTO‑220 (Through‑Hole)
Lead StatusLead‑Free (PbF)
QualificationIndustrial
RoHSCompliant

2. Absolute Maximum Ratings (Tc = 25°C)


ParameterValueUnit
VDS55V
VGS±20V
ID (Continuous)49A
ID (at 100°C)35A
IDM (Pulsed)160A
IAR (Avalanche Current)25A
PD (Power Dissipation)94W
TJ Operating Range-55 to +175°C
TSTG Storage Range-55 to +175°C
dv/dt5.0V/ns

3. Thermal Characteristics


ParameterValueUnit
RθJC (Junction‑to‑Case)1.59°C/W
RθJA (Junction‑to‑Ambient)62°C/W
Linear Derating Factor0.63W/°C

4. Electrical Characteristics (TJ = 25°C)

ParameterMinTypMaxUnitCondition
V(BR)DSS55VVGS = 0 V, ID = 250 µA
VGS(th)2.04.0VVDS = VGS, ID = 250 µA
RDS(on)17.5VGS = 10 V, ID = 25 A
gfs19SVDS = 25 V, ID = 25 A
IDSS25µAVDS = 55 V, VGS = 0 V
IDSS (150°C)250µAVDS = 44 V, VGS = 0 V
IGSS±100nAVGS = ±20 V

5. Dynamic Characteristics


ParameterValueUnit
Qg (Total Gate Charge)63 nC
Qgs (Gate‑Source Charge)14 nC
Qgd (Miller Charge)23 nC
td(on) (Turn‑On Delay)12ns
tr (Rise Time)60ns
td(off) (Turn‑Off Delay)44ns
tf (Fall Time)45ns
Ciss (Input Capacitance)1470pF
Coss (Output Capacitance)360pF
Crss (Reverse Capacitance)88pF

6. Body Diode Characteristics


ParameterValueUnit
IS (Diode Current)49A
ISM (Pulsed Diode Current)160A
trr (Reverse Recovery Time)95ns
Qrr (Recovery Charge)170nC

7. Avalanche Characteristics

ParameterValueUnit
EAS (Single‑Pulse Avalanche Energy)1506mJ
EAR (Repetitive Avalanche Energy)9.4mJ

8. Key Features


  • N‑channel enhancement mode power MOSFET
  • Ultra‑low RDS(on) = 17.5 mΩ max
  • Fast switching speed
  • 175°C maximum junction temperature
  • Fully avalanche rated
  • Lead‑free package (PbF)
  • RoHS compliant
  • TO‑220 through‑hole package
  • High current capability: 49 A

9. Typical Applications


  • Switching power supplies
  • DC‑DC converters
  • Motor control
  • Power inverters
  • Battery management
  • Load switches
  • Automotive and industrial power systems


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