MTW8N50E Model Information

Overview

The MTW8N50E is a high-performance TMOS E-FET™ Power Field Effect Transistor designed by Motorola. It is an N-Channel Enhancement-Mode Silicon Gate device optimized for high voltage, high-speed switching applications in power supplies, converters, and PWM motor controls. This device is particularly well-suited for bridge circuits where diode speed and commutating safe operating areas are critical.

Key Features

• High Avalanche Energy: Designed to withstand high energy in avalanche and commutation modes.
• Fast Recovery Time: Drain-to-source diode with fast recovery time, comparable to a discrete fast recovery diode.
• High Voltage and Speed: Ideal for high voltage and high-speed switching applications.
• Enhanced Safety Margin: Offers additional safety margin against unexpected voltage transients.
• Temperature Specifications: IDSS and VDS(on) specified at elevated temperatures.

Electrical Characteristics

• Continuous Drain Current (ID): 8.0 Amperes.
• Drain-to-Source On-Resistance (RDS(on)): 0.80 Ohms at 25°C.
• Maximum Drain-to-Source Voltage (VDS): 500 Volts.
• Pulse Test Conditions: Pulse width ≤ 300 μs, Duty cycle ≤ 2%.

Package Information

• Package Type: CASE340F-03 (TO-247AE).
• Dimensions:Case Length: 20.40 mm (max).Case Width: 15.44 mm (max).Case Height: 4.70 mm (max).Pin 1 Gate: 1.30 mm (max).Drain Pin: 1.63 mm (max).Source Pin: 0.051 mm (max).

Maximum Ratings (TJ = 25°C unless otherwise noted)

• Drain-to-Source Voltage (VDS): 500 V.
• Gate-to-Source Voltage (VGS): ±20 V.
• Continuous Drain Current (ID): 8.0 A.
• Pulse Drain Current (IDM): 12 A (pulse width ≤ 300 μs, duty cycle ≤ 2%).
• Power Dissipation (Pd): 125 W (at 25°C ambient temperature).
• Operating Junction Temperature (TJ): -55°C to +150°C.
• Storage Temperature (Tstg): -65°C to +150°C.

Ordering Information

• Model Number: MTW8N50E.
• Package Type: CASE340F-03 (TO-247AE).
• Operating Range: Industrial (-55°C to +150°C).

Additional Information

• Avalanche Energy Specification: Ensures robustness in high-energy applications.
• Source-to-Drain Diode Recovery Time: Comparable to a discrete fast recovery diode.
• Diode Characterization: Specifically designed for use in bridge circuits.
• Temperature Specifications: IDSS and VDS(on) specified at elevated temperatures to ensure reliability in high-temperature environments.

Package Outline Dimensions

• CASE340F-03 (TO-247AE):Case Length: 20.40 mm (max).Case Width: 15.44 mm (max).Case Height: 4.70 mm (max).Pin 1 Gate: 1.30 mm (max).Drain Pin: 1.63 mm (max).Source Pin: 0.051 mm (max).