BLP9H10S-500AWTZ Product Information

Manufacturer

Ampleon USA Inc.

Product Overview

The BLP9H10S-500AWTZ is a 500 W LDMOS packaged asymmetric Doherty power transistor designed for base station applications at frequencies from 600 MHz to 960 MHz. It features excellent ruggedness, high efficiency, and low thermal resistance, providing excellent thermal stability. The transistor is also designed for low memory effects, offering excellent digital pre-distortion capability.

Key Specifications

• Frequency Range: 600 MHz to 960 MHz
• Power Output: Up to 620 W
• Drain-Source Voltage (VDS): 105 V
• Gate-Source Voltage (VGS): -6 V to +11 V
• Operating Temperature (Tcase): -40°C to +125°C
• Storage Temperature (Tsig): -65°C to +150°C
• Junction Temperature (Tj): 11°C to 225°C
• Thermal Resistance (RΘJC): 0.55 K/W

Features

• High Efficiency: Ensures minimal power loss during operation.
• Low Thermal Resistance: Provides excellent thermal stability.
• Lower Output Capacitance: Improves performance in Doherty applications.
• Internal Integrated Wideband Input and Output Matching: Simplifies design and integration.
• Integrated Double-Sided ESD Protection: Enhances reliability.
• Bias Through Video Leads: Facilitates easier biasing.

Applications

• RF Power Amplifiers: Suitable for base stations and multi-carrier applications in the 600 MHz to 960 MHz frequency range.
• Telecommunications: Ideal for high-frequency communication systems.
• Industrial Applications: Can be used in industrial RF systems requiring high power and efficiency.

Ordering Information

• Part Number: BLP9H10S-500AWTZ
• Package Type: OMP-780-6F-1
• Lead Time: Varies based on supplier availability.

Support and Documentation

• Datasheet: Available on the Ampleon website.
• Technical Support: Contact Ampleon USA Inc. for application-specific inquiries.