Renesas CA3083M96

View All Single, Pre-Biased Bipolar Transistors by Renesas

Part Number:
CA3083M96
Manufacturer:
Renesas
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
Non-RoHS Compliant
Datasheet:
CA3083M96_Datesheet
Description:
TRANS 5NPN 15V 0.1A 16SOIC
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Specifications

Type

Paramete

Type

Paramete

Current - Collector (Ic) (Max)

100mA

Qualification

Grade

Transistor Type

5 NPN

Frequency - Transition

450MHz

Package / Case

16-SOIC (0.154", 3.90mm Width)

Operating Temperature

150°C (TJ)

Power - Max

500mW

Vce Saturation (Max) @ Ib, Ic

700mV @ 5mA, 50mA

Mounting Type

Surface Mount

Voltage - Collector Emitter Breakdown (Max)

15V

Current - Collector Cutoff (Max)

10µA

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 50mA, 3V

Supplier Device Package

16-SOIC

Overview

Information of CA3083M96 NPN Transistor Array

Basic Overview

Product Type: General-purpose high-current NPN transistor array
Manufacturer: Intersil Corporation
Document Reference: FN481.7 (December 15, 2011)
Core Configuration: 5 independent high-current NPN transistors on a common monolithic substrate; Q1 and Q2 are matched for low-offset applications
Key Features: High collector current (up to 100mA), low saturation voltage, separate substrate connection, Pb-free RoHS-compliant, wide operating temperature range
Target Applications: Signal processing/switching (DC to VHF), lamp/relay drivers, differential amplifiers, temperature-compensated amplifiers, thyristor firing

Core Specifications

1. Absolute Maximum Ratings (Per Transistor)

Parameter	Specification
Collector-to-Emitter Voltage (VCEO)	15V
Collector-to-Base Voltage (VCBO)	20V
Collector-to-Substrate Voltage (VCIO)	20V
Emitter-to-Base Voltage (VEBO)	5V (Min), 6.9V (Typ)
Collector Current (IC)	100mA (Max)
Base Current (IB)	20mA (Max)
Maximum Power Dissipation (Per Transistor)	500mW
Junction Temperature (Plastic Package)	150°C (Max)
Storage Temperature Range	-65°C to 150°C
Lead Temperature (Soldering, 10s)	300°C (SOIC, lead tips only)

2. Thermal Characteristics (SOIC Package)

Parameter	Specification
Thermal Resistance (θJA)	200°C/W (Typ)
Thermal Resistance (θJC)	N/A

3. Electrical Performance (TA=25°C)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=100μA, IE=0	20	60	-	V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=1mA, IB=0	15	24	-	V
Collector-to-Substrate Breakdown Voltage	V(BR)CIO	ICI=100μA, IB=0, IE=0	20	60	-	V
Collector Cutoff Current (CEO)	ICEO	VCE=10V, IB=0	-	-	10	μA
Collector Cutoff Current (CBO)	ICBO	VCB=10V, IE=0	-	-	1	μA
DC Forward Current Transfer Ratio	hFE	VCE=3V, IC=10mA	40	76	-	-
		VCE=3V, IC=50mA	40	75	-	-
Base-to-Emitter Voltage	VBE	VCE=3V, IC=10mA	0.65	0.74	0.85	V
Collector-to-Emitter Saturation Voltage	VCE(SAT)	IC=50mA, IB=5mA	-	0.40	0.70	V
Gain Bandwidth Product	fT	VCE=3V, IC=10mA	-	450	-	MHz

4. Matched Pair (Q1 & Q2, Differential Amplifier Configuration)

Parameter	Symbol	Test Conditions	Typ	Max	Units
Absolute Input Offset Voltage	VIOL	VCE=3V, IC=1mA	1.2	5	mV
Absolute Input Offset Current	IIOL	VCE=3V, IC=1mA	0.7	2.5	μA

Package and Mechanical Details

1. Package Specifications

Parameter	Specification
Package Type	16-lead SOIC (Small Outline Integrated Circuit)
Package Drawing Number	M16.15
Packaging Method	Tape and Reel
Part Marking	3083
Lead Finish	100% matte tin (Pb-free, RoHS compliant)
Moisture Sensitivity Level (MSL)	Meets IPC/JEDEC J-STD-020 requirements for Pb-free reflow

2. Key Package Notes

Pb-free compatibility: Suitable for both SnPb and Pb-free soldering operations
Substrate Connection: Terminal 5 (separate substrate pin) must be connected to a voltage more negative than any collector voltage (or DC/signal ground) for transistor isolation
SOIC Package Restriction: Soldering limited to lead tips only (300°C for 10s max)

Ordering and Compliance

Orderable Part Number	Part Marking	Temperature Range	Package	Compliance
CA3083M96	3083	-55°C to 125°C	16-lead SOIC (Tape and Reel)	RoHS compliant, Pb-free

Complementary Part Variants

CA3083: 16-lead PDIP (through-hole, -55°C to 125°C)
CA3083Z: 16-lead Pb-free PDIP (wave solder only)
CA3083MZ: 16-lead Pb-free SOIC
CA3083MZ96: 16-lead Pb-free SOIC (Tape and Reel)

Operational Guidelines

Substrate Handling: Connect substrate terminal to ground (DC or AC) with a bypass capacitor to avoid cross-coupling between transistors
Matching Usage: Utilize Q1 and Q2 for low-offset applications (e.g., differential amplifiers) to leverage their matched VBE and input offset parameters
Temperature Considerations: Operate within -55°C to 125°C ambient temperature; hFE and VBE vary with temperature (refer to Typical Performance Curves)
ESD Sensitivity: Follow proper IC handling procedures to prevent electrostatic discharge damage

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