Sanyo FSS145-TL-E

View All Single, Pre-Biased Bipolar Transistors by Sanyo

Part Number:
FSS145-TL-E
Manufacturer:
Sanyo
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
Non-RoHS Compliant
Datasheet:
FSS145-TL-E_Datesheet
Description:
FSS145 - P-CHANNEL SILICON MOSFE
In stock 3,000

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Specifications

Type

Paramete

Type

Paramete

Power Dissipation (Max)

Qualification

Vgs (Max)

FET Feature

FET Type

Mounting Type

Grade

Current - Continuous Drain (Id) @ 25°C

Operating Temperature

Vgs(th) (Max) @ Id

Rds On (Max) @ Id, Vgs

Supplier Device Package

Technology

Gate Charge (Qg) (Max) @ Vgs

Input Capacitance (Ciss) (Max) @ Vds

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On, Min Rds On)

Package / Case

Overview

FSS145-TL-E Specification Summary

Name: FSS145-TL-E
Brand: Sanyo
SKU: JM-FSS145-TL-E
Availability: InStock

1. Product Overview

FSS145-TL-E is a P-channel silicon MOSFET manufactured by SANYO Semiconductors, designed as a general-purpose switching device. It features low on-resistance, 4V drive capability, and robust current handling, making it suitable for load switching applications. The device comes in an SOP8 package, with a part marking of "S145" for easy identification.

2. Key Features

Device Type: P-Channel Silicon MOSFET
Application: General-purpose load switching
Low ON-resistance: Down to 18 mΩ (typical) at ID=-8A, VGS=-10V
4V drive compatibility: Operates with VGS=-4V
High current handling: DC drain current up to -8A; pulse current up to -32A (10µs, 1% duty cycle)
Wide voltage rating: Drain-to-source voltage (VDSS) of -45V
Compact package: SOP8
Marking Code: S145

3. Absolute Maximum Ratings (Ta=25°C)

Parameter	Symbol	Conditions	Rating	Unit
Drain-to-Source Voltage	VDSS	-	-45	V
Gate-to-Source Voltage	VGSS	-	+20	V
DC Drain Current	ID	-	-8	A
Pulse Drain Current (PW=10s)	ID	Duty cycle=1%	-8.5	A
Pulse Drain Current (PW=10µs)	IDP	Duty cycle=1%	-32	A
Allowable Power Dissipation	PD	Mounted on ceramic board (1200mm²×0.8mm), PW=10s	2.9	W
Channel Temperature	Tch	-	150	°C
Storage Temperature	Tstg	-	-55 to +150	°C

Note: Exceeding maximum ratings may cause permanent device damage. These are stress ratings only; functional operation beyond recommended conditions is not implied.

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