Infineon Technologies IR2103STRPBF

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  • Part Number:

    IR2103STRPBF

  • Manufacturer:

    Infineon Technologies

  • Category:

    Real Time Clocks

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf IR2103STRPBF_Datesheet

  • Description:

    IC GATE DRVR HALF-BRIDGE 8SOIC

  • In stock 8,200
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Specifications
Type
Paramete
Type
Paramete
Package / Case
8-SOIC (0.154", 3.90mm Width)
Logic Voltage - VIL, VIH
0.8V, 3V
Gate Type
IGBT, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)
600 V
Current - Peak Output (Source, Sink)
210mA, 360mA
Input Type
Inverting, Non-Inverting
Grade
-
Mounting Type
Surface Mount
Number of Drivers
2
Operating Temperature
-40°C ~ 150°C (TJ)
Qualification
-
Supplier Device Package
8-SOIC
Channel Type
Independent
Voltage - Supply
10V ~ 20V
Rise / Fall Time (Typ)
100ns, 50ns
Driven Configuration
Half-Bridge
Overview

Product Summary

  • VOFFSET: 600V max.
  • IO+/130 mA / 270 mA: Output current capabilities
  • VOUT: 10 - 20V
  • ton/off (typ.): 680 & 150 ns
  • Deadtime (typ.): 520 ns

Features

  • Floating channel designed for bootstrap operation
  • Fully operational to +600V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10 to 20V
  • Undervoltage lockout
  • 3.3V, 5V, and 15V logic compatible
  • Cross-conduction prevention logic
  • Matched propagation delay for both channels
  • Internal set deadtime
  • High side output in phase with HIN input
  • Low side output out of phase with LIN input

Packages

  • 8-Lead SOIC IR2103S
  • 8-Lead PDIP IR2103

Absolute Maximum Ratings

  • VB: High side floating absolute voltage, -0.3 to 625
  • VS: High side floating supply offset voltage, VB - 25 to VB + 0.3
  • VHO: High side floating output voltage, VS - 0.3 to VB + 0.3
  • VCC: Low side and logic fixed supply voltage, -0.3 to 25
  • VLO: Low side output voltage, -0.3 to VCC + 0.3
  • VIN: Logic input voltage (HIN & LIN), -0.3 to VCC + 0.3
  • dVs/dt: Allowable offset supply voltage transient, — 50 V/ns
  • PD: Package power dissipation @ TA ≤ +25°C, (8 Lead PDIP) — 1.0, (8 Lead SOIC) — 0.625
  • RthJA: Thermal resistance, junction to ambient, (8 Lead PDIP) — 125, (8 Lead SOIC) — 200
  • TJ: Junction temperature, — 150
  • TS: Storage temperature, -55 to 150
  • TL: Lead temperature (soldering, 10 seconds), — 300

Dynamic Electrical Characteristics

  • VIH: Logic “1” (HIN) & Logic “0” (LIN) input voltage, 3 — — VCC = 10V to 20V
  • VIL: Logic “0” (HIN) & Logic “1” (LIN) input voltage, — — 0.8 VCC = 10V to 20V
  • VOH: High level output voltage, VBIAS - VO, — — 100 IO = 0A
  • VOL: Low level output voltage, VO, — — 100 IO = 0A
  • ILK: Offset supply leakage current, — — 50 VB = VS = 600V
  • IQBS: Quiescent VBS supply current, — 30 55 VIN = 0V or 5V
  • IQCC: Quiescent VCC supply current, — 150 270 VIN = 0V or 5V
  • IIN+: Logic “1” input bias current, — 3 10 HIN = 5V, LIN = 0V
  • IIN: Logic “0” input bias current, — — 1 HIN = 0V, LIN = 5V
  • VCCUV+: VCC supply undervoltage positive going threshold, 8 8.9 9.8
  • VCCUV: VCC supply undervoltage negative going threshold, 7.4 8.2 9
  • IO+: Output high short circuit pulsed current, 130 210 — VO = 0V, VIN = VIH
  • IO: Output low short circuit pulsed current, 270 360 — VO = 15V, VIN = VIL PW ≤ 10 µs
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