Samsung KLM8G1GETF-B041


- Part Number:
KLM8G1GETF-B041
- Manufacturer:
- Category:
- RoHs:
Non-RoHS Compliant - Datasheet:
- Description:
Memory IC 64Gbit eMMC 153-WFBGA (11.5x13)
- In stock 0
Samsung KLM8G1GETF‑B041 Comprehensive Datasheet Summary
1. Basic Device Information
- Full Part Number: KLM8G1GETF‑B041
- Device Type: Embedded Multimedia Card (e·MMC)
- Capacity: 8GB
- Interface Standard: e·MMC 5.1 (JEDEC standard)
- NAND Flash Configuration: 64Gb × 1
- Package: 153‑ball FBGA
- Dimensions: 11.5 mm × 13 mm × 0.8 mm
- Document Version: Rev. 1.21 (July 2017)
- Status: Mass production
2. Core Features
- Supports HS400 high‑speed mode (up to 400 MB/s)
- Supports HS200, DDR52, and legacy high‑speed modes
- Data bus width: 1‑bit (default), 4‑bit, 8‑bit
- Clock frequency: up to 200 MHz for HS400/HS200
- Embedded controller with ECC, wear leveling, bad block management
- Supports Command Queuing, Enhanced Strobe, Secure Write Protection
- Supports RPMB (Replay Protected Memory Block) with improved throughput
- Supports partition management: boot, RPMB, general‑purpose, user, enhanced areas
- Auto power saving mode for low power consumption
3. Voltage Specifications
- Memory Core Voltage (VCC): 2.7 V – 3.6 V
- Interface I/O Voltage (VCCQ): 1.70 V – 1.95 V or 2.7 V – 3.6 V
- Ground (VSS): –0.5 V – +0.5 V
4. Temperature Range
- Operating Temperature: –25 °C to +85 °C
- Storage Temperature: –40 °C to +85 °C
5. Performance Specifications
- Sequential Read: Up to 330 MB/s (8‑bit, HS400)
- Sequential Write: 50 MB/s (8‑bit, HS400)
- Command Queue Depth: 16 levels (CMDQ_DEPTH = 0x0F)
- Boot ACK Time: < 50 ms
- Boot Data Time: < 100 ms
- Initialization Time: < 3 s (with partition); < 1 s (default)
6. Partition & Memory Layout
- Boot Partitions (2): 4096 KB each
- RPMB Partition: 512 KB default (max 4096 KB)
- User Density: 7,818,182,656 bytes
- Max Enhanced Partition Size: 3,909,091,328 bytes
- Supports 4 general‑purpose partitions (GPP)
7. Package & Pin Configuration
- Package: 153‑ball FBGA
- Size: 11.5 × 13 × 0.8 mm
- Key Signals:
8. AC & DC Characteristics
AC Timing (HS400)
- Clock cycle time: 5 ns min
- Input setup/hold time: 0.4 ns
- Slew rate: 1.125 V/ns
DC Parameters
- Active current (VCCQ): 180 mA (typ)
- Standby current (25 °C): 400 μA (typ)
- Sleep current (25 °C): 120 μA (typ)
9. Supported e·MMC 5.1 Features
- Command Queuing (CMDQ)
- Enhanced Strobe mode
- Improved RPMB throughput
- Secure Write Protection
- Cache control & flush
- Background operations (BKOPS)
- Field Firmware Update (FFU)
- Partition configuration & protection
10. Registers Summary
- OCR: Supports 1.70–1.95 V and 2.7–3.6 V I/O
- CID: Manufacturer ID 0x15; device name encodes 8GB
- CSD: Defines access timing, block length, device size
- EXT_CSD: Rev 0x08 (e·MMC 5.1); enables HS400, CMDQ, RPMB, WP
11. Reliability & Quality
- Integrated ECC, bad block management, wear leveling
- Data integrity during power failure
- Hardware reset (RST_n) support
- RoHS compliant, halogen‑free available
12. Target Applications
- Smartphones, tablets, portable devices
- Automotive infotainment
- Industrial embedded systems
- IoT gateways & edge devices
- Set‑top boxes & digital signage
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