Micron Technology Inc. MT40A1G16TB-062E:F TR


- Part Number:
MT40A1G16TB-062E:F TR
- Manufacturer:
- Category:
- RoHs:
Non-RoHS Compliant - Datasheet:
- Description:
SDRAM - DDR4 Memory IC 16Gbit Parallel 1.5 GHz 19 ns 96-FBGA (7.5x13)
- In stock 0
Micron DDR4 SDRAM – MT40A1G16TB-062E:F TR Full Specification Summary
1. Basic Identification
- Manufacturer: Micron Technology Inc.
- Part Number: MT40A1G16TB-062E:F TR
- Product Type: 16Gb DDR4 SDRAM
- Density Organization: 1Gb x16
- Package: 96‑ball FBGA (code TB)
- Speed Grade: ‑062E (DDR4‑3200)
- Revision: F
- Packaging: Tape & Reel (TR)
- Compliance: RoHS compliant, lead‑free
- Document Revision: Rev. H (Aug 2021)
2. Core Specifications
- Memory Architecture: 8 internal banks (2 bank groups × 4 banks each)
- Prefetch: 8n prefetch DDR architecture
- Data Rate: 3200 MT/s
- Clock Cycle Time: 0.625 ns
- CAS Latency (CL): 22
- Target Timing: 22‑22‑22 (CL‑RCD‑RP)
3. Electrical Characteristics
- Core Supply Voltage (VDD/VDDQ): 1.2V ±60 mV
- Boost Voltage (VPP): 2.5V −125 mV / +250 mV
- Reference Voltage: On‑die internal VREFDQ generation
- I/O Type: 1.2V pseudo open‑drain
4. Operating Conditions
- Case Temperature (TC): 0°C to +95°C (commercial grade)
- Refresh:
5. Package & Mechanical
- Package Type: 96‑ball FBGA (TB)
- Dimensions: 7.5 mm × 13 mm
- Mounting: Surface mount
- Solder Alloy: SAC305
- Ball Pitch: Standard DDR4 fine pitch
6. Key Features
- JEDEC JESD79‑4 compliant
- Differential clock (CK_t/CK_c)
- Programmable burst length: BL8 / BC4 (on‑the‑fly)
- Burst type: Sequential or interleaved
- On‑die termination (ODT): Nominal, park, dynamic modes
- Data bus inversion (DBI) & data mask (DM)
- Write leveling & command/address latency (CAL)
- CA parity & write CRC support
- Per‑DRAM addressability (PDA)
- Temperature‑controlled refresh (TCR)
- Low‑power auto self‑refresh (LPASR)
- Fine granularity refresh
- ZQ calibration for output driver
- Hardware RESET_n
- Multi‑purpose register (MPR) for calibration/test
- sPPR / hPPR post‑package repair support
7. Timing Parameters (‑062E, DDR4‑3200)
- tAA: 13.75 ns
- tRCD: 13.75 ns
- tRP: 13.75 ns
- Read Latency (RL): CL + AL = 22
- Write Latency (WL): CWL + AL = 16
8. Reliability & Quality
- 100k erase/write cycles per block
- Data retention: Up to 20 years at 55°C
- ECC support by host controller
- Designed for industrial and embedded longevity
9. Target Applications
- Desktop/notebook computing
- Consumer electronics
- Embedded systems
- High‑speed memory subsystems
- Networking and storage
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Micron Technology Inc.

Micron Technology Inc.
Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.












