Micron Technology Inc. MT40A1G8SA-062E IT:E

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  • Part Number:

    MT40A1G8SA-062E IT:E

  • Manufacturer:

    Micron Technology Inc.

  • Category:

    Display Drivers

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

  • Description:

    SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 78-FBGA (7.5x11)

  • In stock 0
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Overview

Micron MT40A1G8SA-062E IT:E 8Gb DDR4 SDRAM – Complete Attachment Summary


1. Basic Identification


  • Manufacturer: Micron Technology, Inc.
  • Part Number: MT40A1G8SA-062E IT:E
  • Device Type: 8Gb CMOS DDR4 SDRAM
  • Organization: 1Gb × 8 (1G x8)
  • Data Width: 8-bit
  • Speed Grade: -062E (DDR4–3200)
  • Temperature Grade: Industrial (IT)
  • Package: 78‑ball FBGA (WE: 8 mm × 12 mm)
  • Compliance: RoHS‑compliant, halogen‑free, lead‑free
  • Revision: Based on Rev. N (06/18)

2. Key Features


  • Core voltage: VDD = VDDQ = 1.2 V ± 60 mV
  • Pump voltage: VPP = 2.5 V (−125 mV / +250 mV)
  • On‑die adjustable VREFDQ generation
  • 1.2 V pseudo open‑drain I/O
  • 8n‑bit prefetch architecture
  • 16 internal banks (4 bank groups × 4 banks)
  • Programmable burst length: 4/8 (sequential/interleave)
  • Dynamic ODT (RTT_NOM, RTT_WR, RTT_PARK)
  • Write leveling, ZQ calibration, write CRC
  • Data bus inversion (DBI, x8 only)
  • Command/address parity & CA latency (CAL)
  • Self refresh, low‑power auto self refresh (LPASR)
  • Temperature‑controlled refresh (TCR)
  • Fine granularity refresh, per‑DRAM addressability (PDA)
  • Multipurpose register (MPR) for test & calibration
  • Post‑package repair: sPPR, hPPR

3. Speed & Timing Parameters


  • Data Rate: 3200 MT/s
  • Cycle Time: tCK = 0.625 ns
  • CAS Latency: CL = 22
  • Timing: CL–tRCD–tRP = 22–22–22
  • tCK (MIN): 0.625 ns
  • Access Time: ~13.75 ns
  • tRAS: 39.75 ns
  • tRC: 61.25 ns

4. Electrical Specifications


Recommended Operating Conditions

表格


ParameterMinTypMaxUnit
VDD / VDDQ1.141.201.26V
VPP2.3752.502.75V
VREFCAVDD/2V
VREFDQInternal calibrationV

Absolute Maximum Ratings


  • VDD/VDDQ: −0.3 V ~ 1.5 V
  • VPP: −0.3 V ~ 3.0 V
  • Input/Output voltage: −0.3 V ~ 1.5 V

5. Temperature & Refresh


  • Operating Case Temp (TC): −40 °C ~ +95 °C
  • Storage Temp: −55 °C ~ +105 °C
  • Refresh:
  • tRFC: 350 ns (normal); 260 ns (2x); 160 ns (4x)

6. Bank & Address Mapping (1Gb ×8)


  • Bank groups: 4
  • Banks per group: 4
  • Row address: A[15:0] (64K)
  • Column address: A[9:0] (1K)
  • Page size: 1 KB
  • Address mapping: BG[1:0], BA[1:0], A[15:0] (row), A[9:0] (column)

7. Package & Mechanical


  • Package type: 78‑ball FBGA (WE marking)
  • Outline: 8.0 mm × 12.0 mm
  • Ball pitch: 0.45 mm
  • Solder ball: SAC302
  • Package thickness: 0.34 ± 0.05 mm (post‑reflow)
  • Mounting: Surface‑mount

8. Key Functions & Modes


  • DLL enable/disable & reset
  • Gear‑down mode (1/2, 1/4 rate)
  • Read/write preamble (1tCK / 2tCK)
  • Read preamble training
  • Power‑down modes (active/precharge)
  • Maximum power‑saving mode (MPSM)
  • Connectivity test (CT) mode
  • CA parity persistent error mode
  • Internal VREF monitoring

9. Reliability & Compliance


  • RoHS compliant
  • Halogen‑free
  • Lead‑free assembly
  • Industrial‑grade quality
  • JEDEC JESD79‑4 compliant


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