Micron Technology Inc. MT40A1G8SA-062E IT:E


- Part Number:
MT40A1G8SA-062E IT:E
- Manufacturer:
- Category:
- RoHs:
Non-RoHS Compliant - Datasheet:
- Description:
SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 78-FBGA (7.5x11)
- In stock 0
Micron MT40A1G8SA-062E IT:E 8Gb DDR4 SDRAM – Complete Attachment Summary
1. Basic Identification
- Manufacturer: Micron Technology, Inc.
- Part Number: MT40A1G8SA-062E IT:E
- Device Type: 8Gb CMOS DDR4 SDRAM
- Organization: 1Gb × 8 (1G x8)
- Data Width: 8-bit
- Speed Grade: -062E (DDR4–3200)
- Temperature Grade: Industrial (IT)
- Package: 78‑ball FBGA (WE: 8 mm × 12 mm)
- Compliance: RoHS‑compliant, halogen‑free, lead‑free
- Revision: Based on Rev. N (06/18)
2. Key Features
- Core voltage: VDD = VDDQ = 1.2 V ± 60 mV
- Pump voltage: VPP = 2.5 V (−125 mV / +250 mV)
- On‑die adjustable VREFDQ generation
- 1.2 V pseudo open‑drain I/O
- 8n‑bit prefetch architecture
- 16 internal banks (4 bank groups × 4 banks)
- Programmable burst length: 4/8 (sequential/interleave)
- Dynamic ODT (RTT_NOM, RTT_WR, RTT_PARK)
- Write leveling, ZQ calibration, write CRC
- Data bus inversion (DBI, x8 only)
- Command/address parity & CA latency (CAL)
- Self refresh, low‑power auto self refresh (LPASR)
- Temperature‑controlled refresh (TCR)
- Fine granularity refresh, per‑DRAM addressability (PDA)
- Multipurpose register (MPR) for test & calibration
- Post‑package repair: sPPR, hPPR
3. Speed & Timing Parameters
- Data Rate: 3200 MT/s
- Cycle Time: tCK = 0.625 ns
- CAS Latency: CL = 22
- Timing: CL–tRCD–tRP = 22–22–22
- tCK (MIN): 0.625 ns
- Access Time: ~13.75 ns
- tRAS: 39.75 ns
- tRC: 61.25 ns
4. Electrical Specifications
Recommended Operating Conditions
表格
| Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|
| VDD / VDDQ | 1.14 | 1.20 | 1.26 | V |
| VPP | 2.375 | 2.50 | 2.75 | V |
| VREFCA | — | VDD/2 | — | V |
| VREFDQ | Internal calibration | — | — | V |
Absolute Maximum Ratings
- VDD/VDDQ: −0.3 V ~ 1.5 V
- VPP: −0.3 V ~ 3.0 V
- Input/Output voltage: −0.3 V ~ 1.5 V
5. Temperature & Refresh
- Operating Case Temp (TC): −40 °C ~ +95 °C
- Storage Temp: −55 °C ~ +105 °C
- Refresh:
- tRFC: 350 ns (normal); 260 ns (2x); 160 ns (4x)
6. Bank & Address Mapping (1Gb ×8)
- Bank groups: 4
- Banks per group: 4
- Row address: A[15:0] (64K)
- Column address: A[9:0] (1K)
- Page size: 1 KB
- Address mapping: BG[1:0], BA[1:0], A[15:0] (row), A[9:0] (column)
7. Package & Mechanical
- Package type: 78‑ball FBGA (WE marking)
- Outline: 8.0 mm × 12.0 mm
- Ball pitch: 0.45 mm
- Solder ball: SAC302
- Package thickness: 0.34 ± 0.05 mm (post‑reflow)
- Mounting: Surface‑mount
8. Key Functions & Modes
- DLL enable/disable & reset
- Gear‑down mode (1/2, 1/4 rate)
- Read/write preamble (1tCK / 2tCK)
- Read preamble training
- Power‑down modes (active/precharge)
- Maximum power‑saving mode (MPSM)
- Connectivity test (CT) mode
- CA parity persistent error mode
- Internal VREF monitoring
9. Reliability & Compliance
- RoHS compliant
- Halogen‑free
- Lead‑free assembly
- Industrial‑grade quality
- JEDEC JESD79‑4 compliant
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Micron Technology Inc.

Micron Technology Inc.
Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.












