Micron Technology Inc. MT41K512M8DA-107 AAT:P


- Part Number:
MT41K512M8DA-107 AAT:P
- Manufacturer:
- Category:
- RoHs:
RoHS Compliant - Datasheet:
- Description:
IC DRAM 4GBIT PAR 78FBGA
- In stock 1,390
MT41K512M8DA-107 AAT:P Complete Component Specification Sheet
1. Basic Device Identification
- Manufacturer: Micron Technology Inc.
- Full Part Number: MT41K512M8DA-107 AAT:P
- Product Category: DRAM Memory IC
- Memory Type: DDR3L SDRAM (Low Voltage Double Data Rate 3 Synchronous DRAM)
- Part Status: Mass Production
- RoHS Compliance: RoHS Compliant (Lead-free, Halogen-free)
- ECCN: EAR99
- Moisture Sensitivity Level (MSL): Level 3 (168 hours)
- HTS Code: US 8542.32.00.36; CN 8542329010
- FBGA Code: D9SGX
2. Memory Density & Organization
表格
| Parameter | Value |
|---|---|
| Total Density | 4 Gbit (512 MBytes) |
| Memory Organization | 512M × 8-bit |
| Internal Banks | 8 banks |
| Data Bus Width | 8 bits |
| Architecture | 8n-prefetch DDR3L architecture |
| Refresh Scheme | 8192 cycles / 64 ms |
3. Electrical Specifications
3.1 Power Supply
- Nominal Voltage (VDD/VDDQ): 1.35 V
- Operating Voltage Range: 1.283 V – 1.45 V
- Backward Compatibility: Supports 1.5 V ±0.075 V operation
- Reference Voltage (VREF): VDDQ/2
3.2 Timing & Speed Grade
- Max Clock Frequency: 933 MHz
- Data Transfer Rate: 1866 MT/s (DDR3-1866)
- Cycle Time (tCK): 1.07 ns
- CAS Latency (CL): Programmable (9, 10, 11, 13)
- Additive Latency (AL): Programmable
- Write Latency (WL): RL – 1
4. Package & Mechanical Data
| Parameter | Value |
|---|---|
| Package Type | 78-pin TFBGA (Thin Fine-Pitch Ball Grid Array) |
| Package Dimensions | 8 mm × 10.5 mm × 1.2 mm |
| Ball Pitch | 0.8 mm |
| Mounting Style | Surface Mount (SMT) |
| Solder Ball Material**: Pb-free SACQ |
5. Environmental Operating Conditions
- Operating Temperature Range: -40°C to +105°C (Automotive Extended Temperature, AAT)
- Storage Temperature Range: -55°C to +125°C
- Reflow Soldering Peak Temp: 260°C (per J-STD-020)
6. Key Functional Features
- 8n-prefetch architecture for high-bandwidth data transfer
- Differential bidirectional data strobe (DQS) for accurate data latching
- On-Die Termination (ODT) for enhanced signal integrity
- Internal ZQ calibration for output driver impedance adjustment
- Auto Refresh (AR) and Self Refresh (SR) modes
- Partial Array Self Refresh (PASR) for low-power optimization
- Power-down and deep power-down modes
- Programmable burst lengths (4, 8) with sequential/interleave options
- Fully synchronous operations controlled by differential clock
7. Part Number Decoding (MT41K512M8DA-107 AAT:P)
- MT: Micron manufacturer prefix
- 41K: DDR3L SDRAM product family
- 512M8: 512M × 8-bit memory organization
- DA: Die & configuration code
- -107: Speed grade (1.07 ns cycle time, DDR3-1866)
- AAT: Automotive Extended Temperature grade (-40°C to +105°C)
- :P: Device revision / version code
8. Typical Target Applications
- Automotive infotainment & telematics systems
- Automotive ADAS auxiliary processing units
- Industrial embedded computing
- In-vehicle networking & communication modules
- Industrial control & automation equipment
- Extended-temperature embedded platforms
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Micron Technology Inc.

Micron Technology Inc.
Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.












