Micron Technology Inc. MT48LC16M16A2P-7E IT:G

View All Display Drivers by Micron Technology Inc.

Part Number:
MT48LC16M16A2P-7E IT:G
Manufacturer:
Micron Technology Inc.
Category:
Display Drivers
RoHs:
RoHS Compliant
Datasheet:
MT48LC16M16A2P-7E IT:G_Datesheet
Description:
SDRAM Memory IC 256Mbit Parallel 133 MHz 5.4 ns 54-TSOP II
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Specifications

Type

Paramete

Type

Paramete

Base Product Number

MT48LC16M16A2

Memory Format

DRAM

Memory Interface

Parallel

Supplier Device Package

54-TSOP II

Voltage - Supply

3V ~ 3.6V

Write Cycle Time - Word, Page

14ns

Memory Type

Volatile

Operating Temperature

-40°C ~ 85°C (TA)

Access Time

5.4 ns

Memory Organization

16M x 16

Clock Frequency

133 MHz

Package / Case

54-TSOP (0.400", 10.16mm Width)

Memory Size

256Mbit

Mfr

Micron Technology Inc.

Mounting Type

Surface Mount

Technology

SDRAM

Overview

Information of MT48LC16M16A2P-7E IT:G SDR SDRAM

Basic Overview

Product Type: 256Mb (4 Meg x 16 x 4 banks) Synchronous Dynamic Random-Access Memory (SDR SDRAM)
Manufacturer: Micron Technology, Inc.
Document Reference: 256Mb_sdr.pdf (Rev. W, 05/15 EN)
Core Function: High-speed data storage with synchronous interface, supporting burst read/write operations for industrial applications
Key Features: PC133-compliant, 4 internal banks, programmable burst lengths (1/2/4/8/full page), auto/self refresh modes, LVTTL-compatible, single 3.3V ±0.3V supply
Key Identifiers:

Core Specifications

1. Memory Configuration

Parameter	Specification
Total Capacity	256Mb (32MB)
Organization	4 Meg x 16 bits x 4 internal banks
Row Address	8K (A[12:0])
Column Address	512 (A[8:0])
Bank Address	4 (BA[1:0])
Refresh Count	8192 cycles
Refresh Period	64 ms (industrial temperature range)

2. Electrical Characteristics

Absolute Maximum Ratings

Parameter	Min	Max	Unit
Supply Voltage (VDD/VDDQ)	-1.0	4.6	V
Input/Output Voltage (VIN/VIO)	-1.0	4.6	V
Storage Temperature (TSTG)	-55	150	°C
Power Dissipation	-	1	W

Recommended Operating Conditions

Parameter	Min	Typ	Max	Unit
Supply Voltage (VDD/VDDQ)	3.0	3.3	3.6	V
Input High Voltage (VIH)	2.0	-	VDD+0.3	V
Input Low Voltage (VIL)	-0.3	-	0.8	V
Output High Voltage (VOH)	2.4	-	-	V (IOUT=-4mA)
Output Low Voltage (VOL)	-	-	0.4	V (IOUT=4mA)
Operating Temperature (TA)	-40	-	85	°C
Junction Temperature (TJ)	-40	-	95	°C
Case Temperature (TC)	-40	-	90	°C

Key AC Timing Parameters (-7E Speed Grade, CL=2)

Parameter	Symbol	Min	Max	Unit
Clock Cycle Time	tCK	7.5	-	ns
CAS Latency (CL=2)	tAC(2)	-	5.4	ns
Row Address to Column Address Delay	tRCD	15	-	ns
Precharge Time	tRP	15	-	ns
Active to Active Command Period	tRC	60	-	ns
Refresh Period	tREF	-	64	ms
Refresh Cycle Time	tRFC	66	-	ns
Write Recovery Time	tWR	7	-	ns (1 CLK + 7ns)

3. Power Consumption (Revision G, TA=25°C, VDD=3.3V)

Parameter	Condition	Max	Unit
Operating Current (IDD1)	Active mode, burst=2, read/write	100	mA
Standby Current (IDD2)	Power-down mode, all banks idle	2.5	mA
Active Standby Current (IDD3)	CKE=HIGH, CS#=HIGH, no accesses	35	mA
Page Burst Current (IDD4)	All banks active, page burst	100	mA
Auto Refresh Current (IDD5)	tRFC=MIN	150	mA
Self Refresh Current (IDD7)	Standard self refresh	3	mA
Low-Power Self Refresh Current (IDD7L)	Optional low-power mode	1.5	mA

4. Thermal Characteristics (54-pin TSOP II, Revision G)

Parameter	Condition	Value	Unit
Junction-to-Ambient Thermal Resistance (θJA)	Airflow=0 m/s, low conductivity substrate	122.3	°C/W
	Airflow=1 m/s, low conductivity substrate	105.6	°C/W
	Airflow=2 m/s, low conductivity substrate	98.1	°C/W
Junction-to-Board Thermal Resistance (θJB)	Low conductivity substrate	89.5	°C/W
Junction-to-Case Thermal Resistance (θJC)	Low conductivity substrate	20.7	°C/W

Functional Details

1. Key Operational Modes

Burst Operation

Burst Lengths: Programmable via mode register (1, 2, 4, 8, or full page)
Burst Types: Sequential or interleaved (selectable via mode register)
Write Burst Mode: Programmed burst length (default) or single-location access (configurable)

Refresh Modes

Auto Refresh: 8192 cycles every 64 ms, initiated by external command
Self Refresh: Low-power mode with internal clocking (retains data without external clock), not supported on automotive variants
Refresh Addressing: Internal refresh counter generates row addresses automatically

Power-Saving Modes

Power-Down Mode: Activated via CKE=LOW (precharge power-down for idle banks; active power-down for banks with open rows)
Clock Suspend: Freezes internal logic during burst access when CKE=LOW

2. Mode Register Configuration

Programmed via LOAD MODE REGISTER command, defining operation parameters:

Bit Field	Function	Options
M[2:0]	Burst Length	000=1, 001=2, 010=4, 011=8, 111=Full Page
M3	Burst Type	0=Sequential, 1=Interleaved
M[6:4]	CAS Latency	010=2 (for -7E speed grade)
M[8:7]	Operating Mode	00=Standard (only supported option)
M9	Write Burst Mode	0=Programmed Burst Length, 1=Single Access
M[12:10]	Reserved	Must be set to 0

3. Command Set

Key commands supported (synchronous to positive clock edge):

ACTIVE: Select bank and activate row
READ/WRITE: Initiate burst read/write (supports auto precharge via A10)
PRECHARGE: Deactivate row (single bank or all banks)
AUTO REFRESH/SELF REFRESH: Trigger refresh operations
LOAD MODE REGISTER: Configure operational parameters
BURST TERMINATE: Truncate ongoing burst operations
NOP/COMMAND INHIBIT: Idle or disable command execution

Package and Pin Configuration

1. Package Specifications (54-pin TSOP II "P" Suffix)

Parameter	Min	Max	Unit
Body Length	22.22	22.42	mm
Body Width	10.16	11.76	mm
Package Height	-	1.2	mm
Lead Pitch	-	0.65	mm
Lead Width	0.19	0.30	mm
Lead Finish	90% Sn / 10% Pb (standard)

2. Key Pin Functions (Top View)

Pin Group	Pins	Function
Power	VDD (Multiple pins), VDDQ (Multiple pins)	Core supply (3.3V), DQ supply (3.3V)
Ground	VSS (Multiple pins), VSSQ (Multiple pins)	Core ground, DQ ground
Data I/O	DQ[15:0]	16-bit data bus
Data Mask	DQML, DQMH	Input/output mask (low=enable, high=mask)
Address	A[12:0], BA[1:0]	Row/column address, bank address
Control	CLK, CKE	Clock (synchronizes all signals), Clock Enable
Command	CS#, RAS#, CAS#, WE#	Chip Select, Row Address Strobe, Column Address Strobe, Write Enable
NC	Multiple pins	No connection (leave unconnected)

Application Guidelines

1. Initialization Sequence

Simultaneously apply VDD and VDDQ, provide stable CLK.
Wait 100μs, applying NOP/COMMAND INHIBIT commands.
Issue PRECHARGE ALL command (A10=HIGH).
Wait tRP (15 ns), then issue 2 AUTO REFRESH commands (wait tRFC=66 ns between commands).
Load Mode Register (program burst length, CL=2, burst type, etc.).
Wait tMRD (2 clock cycles) before normal operation.

2. Operational Notes

Burst Access: Start with ACTIVE command (select bank/row), followed by READ/WRITE (select column; A10 enables auto precharge).
Refresh Requirements: Issue 8192 AUTO REFRESH commands every 64 ms to retain data.
Signal Integrity: VDD/VDDQ and VSS/VSSQ must be powered simultaneously; use decoupling capacitors near supply pins.
Industrial Temperature: Ensure case temperature (TC) does not exceed 90°C during operation; use forced air cooling if needed.

3. Compatibility

PC133-compliant, compatible with SDR SDRAM controllers supporting 133 MHz clock, CL=2.
LVTTL-compatible inputs/outputs for seamless interface with industrial microcontrollers/processors.

Ordering and Compliance

Part Number Element	Meaning
MT48LC16M16A2	Base part (4 Meg x 16 x 4 banks, A2= tWR=2 CLK)
P	54-pin TSOP II (400 mil, off-center parting line)
-7E	Speed grade (133 MHz, CL=2, tCK=7.5 ns)
IT	Industrial temperature range (-40°C to +85°C)
:G	Revision G

Complementary Variants

Pb-Free: MT48LC16M16A2BG (54-ball VFBGA) or MT48LC16M16A2PBG (TSOP II Pb-free)
Automotive: MT48LC16M16A2P-7E AT (–40°C to +105°C, 16 ms refresh)
Different Speeds: -6A (167 MHz), -75 (133 MHz, CL=3)

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