Micron Technology Inc. MT53E1G32D2FW-046 WT:B

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  • Part Number:

    MT53E1G32D2FW-046 WT:B

  • Manufacturer:

    Micron Technology Inc.

  • Category:

    Display Drivers

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf MT53E1G32D2FW-046 WT:B_Datesheet

  • Description:

    IC DRAM 32GBIT 2.133GHZ 200VFBGA

  • In stock 815
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Specifications
Type
Paramete
Type
Paramete
Memory Size
32Gbit
Grade
-
Mounting Type
Surface Mount
Supplier Device Package
200-TFBGA (10x14.5)
Clock Frequency
2.133 GHz
Operating Temperature
-25°C ~ 85°C (TC)
Package / Case
200-TFBGA
Memory Format
DRAM
Memory Type
Volatile
Voltage - Supply
1.06V ~ 1.17V
Qualification
-
Write Cycle Time - Word, Page
18ns
Memory Interface
Parallel
Access Time
3.5 ns
Technology
SDRAM - Mobile LPDDR4
Memory Organization
1G x 32
Overview

Micron LPDDR4 SDRAM – MT53E1G32D2FW‑046 WT:B Full Specification Summary


1. Basic Identification


  • Manufacturer: Micron Technology Inc.
  • Part Number: MT53E1G32D2FW‑046 WT:B
  • Product Family: Mobile LPDDR4 / LPDDR4X SDRAM
  • Document: Rev. G (May 2022) – Z42M embedded LPDDR4X/LPDDR4 datasheet
  • Status: Mass production
  • Application: Industrial, embedded, consumer mobile, high‑reliability systems

2. Core Memory Specifications


  • Memory Type: Volatile DRAM – Mobile LPDDR4 SDRAM
  • Total Density: 32 Gbit (4 GB)
  • Memory Organization: 1G x 32 (2 channels × 16 I/O per channel)
  • Die Configuration: Dual‑die, dual‑channel
  • Architecture: 16n prefetch DDR; 8 banks per channel
  • Speed Grade: ‑046
  • Clock Frequency: 2133 MHz
  • Data Rate per Pin: 4266 Mb/s
  • Max Bandwidth: Up to 8.5 GB/s per die

3. Timing Parameters (‑046 Speed Grade)


  • Read Latency (RL):
  • Write Latency (WL): 18 (Set A)
  • Burst Length (BL): Programmable 16 / 32
  • Refresh Timing:

4. Electrical Characteristics


  • Supply Voltages:
  • Power Features:

5. Package & Mechanical


  • Package Type: 200‑ball TFBGA (package code FW)
  • Dimensions: 10.0 mm × 14.5 mm × 1.1 mm
  • Solder Balls: 200× Ø0.436 mm (reflowed on Ø0.40 mm SMD pads)
  • Mounting: Surface mount
  • Solder Alloy: SACQ (Sn‑4Ag‑0.5Cu‑3Bi‑0.05Ni)
  • Marking Code: D9ZQX

6. Operating Conditions


  • Temperature Grade: WT (commercial/industrial extended)
  • Operating Temperature: ‑25°C to +85°C (TC)
  • RoHS Compliance: RoHS compliant, lead‑free “green” package

7. Key Features


  • JEDEC compliant LPDDR4 / LPDDR4X
  • Differential CK and DQS; supports single‑ended CK/DQS
  • Bidirectional data strobe per byte lane
  • Programmable read/write latencies and burst lengths
  • Per‑bank refresh for concurrent operation
  • Data Bus Inversion (DBI) and Data Mask (DM)
  • Hardware RESET_n
  • Command queue, HPI, BKOPS support
  • ZQ calibration for impedance control
  • Internal VREF calibration for CA and DQ
  • Post‑package repair (PPR) support
  • Clock stop and frequency change support

8. Reliability & Compliance


  • ECC and internal block management
  • High shock and vibration resistance
  • Designed for long‑term embedded use
  • Micron quality and reliability standards

9. Target Applications


  • Industrial embedded systems
  • Mobile computing & tablets
  • Automotive infotainment (non‑AEC‑Q version)
  • High‑performance IoT gateways
  • Portable industrial terminals
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Shipping Rate

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