MT53E256M16D1DS-046 AAT:B Comprehensive Datasheet Summary

1. Basic Part Information

• Full Part Number: MT53E256M16D1DS-046 AAT:B
• Device Type: Mobile DRAM / Low Power Double Data Rate (LPDDR) Memory
• Manufacturer: Micron Technology
• Product Series: MT53E Series Mobile Memory
• Grade: AAT:B (Industrial/Commercial Grade Specification)

2. Core Memory Specifications

2.1 Density & Organization

• Total Density: 256 Megabit (256Mb)
• Data Width: 16-bit (x16)
• Configuration: 256M x 16
• Internal Architecture: Multiple bank architecture for high-speed random access

2.2 Speed Parameter

• Speed Grade: -046
• Maximum Clock Frequency: 466 MHz
• Data Rate: Up to 933 Mbps per pin (Double Data Rate operation)
• Cycle Time: Optimized for high-bandwidth continuous data transmission

3. Electrical Characteristics

3.1 Supply Voltage

• Core Operating Voltage (VDD): Standard low-power supply for mobile applications
• I/O Voltage (VDDQ): Matched to mainstream mobile logic levels
• Operating Voltage Range: Strict tolerance for stable operation in portable devices

3.2 Power Consumption

• Operating Power: Low active power consumption
• Standby Power: Ultra-low idle power for power-sensitive systems
• Power-saving Modes: Support multiple low-power sleep/partial power-down modes

3.3 Absolute Maximum Ratings

• Maximum supply voltage, input/output voltage, operating temperature and storage temperature comply with industrial standard specifications
• Temperature Grade (AAT:B):

4. Package & Mechanical Information

• Package Type: D1DS designated package form (Surface Mount Device, SMD)
• Package Outline: Industry-standard compact package for PCB layout
• Pinout: Standard x16 LPDDR pin assignment
• Dimensions & Weight: Miniaturized form factor, suitable for compact electronic products
• Moisture Sensitivity Level (MSL): Defined MSL rating for reflow soldering process

5. Functional Features

1. DDR Operation: Double data rate, data sampled on both rising and falling clock edges
2. On-chip Termination: Integrated termination resistance to improve signal integrity
3. Burst Operation: Programmable burst length for flexible data access
4. Auto Refresh: Built-in auto refresh & self-refresh functions, no external refresh control required
5. Noise Immunity: Enhanced EMC performance for harsh electromagnetic environments
6. Compatibility: Pin and command compatible with mainstream MT53E family devices

6. Application Scenarios

• Portable consumer electronics
• Industrial embedded systems
• Wearable devices
• Automotive auxiliary electronics (AAT:B grade applicable)
• IoT modules and low-power embedded products

7. Marking & Ordering Code Explanation

7.1 Part Number Breakdown

• MT53E: Micron LPDDR Mobile Memory Series
• 256M: 256 Megabit density
• 16: 16-bit data width
• D1DS: Package code
• -046: Speed grade (466 MHz clock)
• AAT:B: Product grade, screening standard & reliability level

7.2 Label Marking

Silkscreen marking on device body: Full part number MT53E256M16D1DS-046 AAT:B, lot code, date code and manufacturer logo

8. Reliability & Quality (AAT:B Standard)

• Reliability screening: AAT:B level strict electrical & temperature cycling test
• Long-term data retention under self-refresh mode
• Compliance with semiconductor industry reliability standards
• RoHS compliant, lead-free packaging

9. Timing Parameters (Key)

• Clock cycle time (tCK): Corresponding to 466 MHz clock
• Access time, read/write latency
• Setup & hold time for address, command and data signals
• Refresh timing parameters