MT53E256M32D2DS‑053 WT:B – LPDDR4/LPDDR4X SDRAM Full Specification Summary

1. Basic Device Identification

• Manufacturer: Micron Technology, Inc.
• Part Number: MT53E256M32D2DS‑053 WT:B
• Device Type: Mobile Low‑Power DDR4 (LPDDR4) / LPDDR4X SDRAM
• Density: 8Gb (256M × 32)
• Package: 200‑ball WFBGA (DS code: 10 mm × 14.5 mm × 0.8 mm, Ø0.35 SMD)
• Die Configuration: Dual‑die, dual‑channel, single‑rank (×32 I/O)
• Revision: Rev. I (02/2021)
• RoHS: Compliant (“green” package)

2. Part Number Decoding

• 53: Mobile LPDDR4 SDRAM
• 256M32: 256 Meg × 32 configuration
• D2: 2 dies per package
• DS: 200‑ball WFBGA package
• ‑053: Cycle time 535 ps @ RL = 32/36
• WT: Operating temp. −30°C to +85°C
• :B: Design revision

3. Key Electrical & Timing Parameters

3.1 Power Supplies

• VDD1: 1.70–1.95 V (nominal 1.80 V)
• VDD2: 1.06–1.17 V (nominal 1.10 V)
• VDDQ: 1.06–1.17 V (nominal 1.10 V) or low‑voltage 0.57–0.65 V (nominal 0.60 V for LPDDR4X)

3.2 Speed & Data Rate

• Clock Rate: 1866 MHz
• Data Rate: 3733 Mb/s per pin
• Cycle Time: 535 ps
• Per‑die Bandwidth: Up to 8.5 GB/s

3.3 Latencies (‑053 speed grade)

• Read Latency (RL): 32 (DBI disabled); 36 (DBI enabled)
• Write Latency (WL): Set A = 16; Set B = 30

4. Architecture & Functional Features

• Architecture: 16n prefetch DDR
• Banks: 8 internal banks per channel
• Channels: 2 channels (×16 I/O per channel)
• Burst Length: Programmable BL = 16, 32; on‑the‑fly support
• Command Interface: Single‑data‑rate (SDR) 2‑tick CA bus
• Data Bus: DDR bidirectional; differential DQS per byte lane
• Addressing: BA[2:0], Row[14:0], Column[9:0]
• Page Size: 2048 bytes per channel

5. Key Integrated Features

• On‑chip temperature sensor for self‑refresh rate control
• Partial‑Array Self Refresh (PASR)
• Per‑bank refresh for concurrent operation
• Programmable READ/WRITE latencies (RL/WL)
• Selectable output drive strength
• Programmable on‑die termination (ODT) for CA and DQ buses
• Data Bus Inversion (DBI) and Data Mask (DM)
• Clock‑stop capability
• ZQ calibration for output impedance and termination
• Target Row Refresh (TRR) mode
• Post‑Package Repair (PPR) support

6. Operating Conditions

• Temperature Range: −30°C to +85°C (WT grade)
• Command/Address: Differential clock inputs (CK_t/CK_c)
• Control Signals: CKE, CS_n, RESET_n, ODT_CA
• I/O: DQ[31:0], DQS[3:0]_t/c, DMI[3:0]
• ZQ Calibration: 240 Ω ±1% reference resistor to VDDQ

7. Key Timing & Power Summary

7.1 Power Consumption (IDD, 3733 Mb/s, 85°C)

• Active (IDD4R2): 322 mA (VDD2)
• Active Write (IDD4W2): 265 mA (VDD2)
• Self Refresh (IDD6): 1.0 mA (VDD1), 3.8 mA (VDD2), 0.75 mA (VDDQ)

7.2 Power‑Up & Initialization

• Voltage ramp time (tINIT0): ≤20 ms
• RESET_n LOW after ramp (tINIT1): ≥200 μs
• Stable clock before CKE (tINIT4): ≥5 tCK
• Mode register setup: VREF(CA/DQ), ODT, drive strength, latency

8. Mode Register Highlights

• MR0: Refresh mode, latency type
• MR1: Burst length, read/write preamble/postamble
• MR2: Write leveling, WL/RL selection
• MR3: DBI enable, drive strength, PPR
• MR11: CA and DQ ODT control
• MR12/MR14: VREF(CA) and VREF(DQ) tuning
• MR13: Frequency set point, command bus training
• MR16/MR17: PASR bank/segment masking

9. Package & Mechanical

• Package Code: DS
• Form Factor: 200‑ball WFBGA
• Dimensions: 10 mm × 14.5 mm × 0.8 mm
• Solder Balls: SAC302 (96.8% Sn, 3.0% Ag, 0.2% Cu)
• Ball Pitch: 0.65 mm typical

10. Command & Operation Summary

• Supported commands: ACTIVATE, READ/WRITE, MASK WRITE, PRECHARGE, REFRESH (all‑bank/per‑bank), SELF REFRESH, MODE REGISTER READ/WRITE, MPC (multipurpose)
• Burst operations: BL16/BL32, seamless/consecutive READ/WRITE
• Power modes: Idle, active, power‑down, self‑refresh
• Training: Command bus, write leveling, read DQ calibration, ZQ calibration

11. Reliability & Compliance

• ESD protection
• Latch‑up immunity
• JEDEC standard compliant
• RoHS‑compliant, halogen‑free (“green”)