Micron MT53E512M32D1ZW-046 AAT:B – LPDDR4X/LPDDR4 SDRAM Full Attachment Summary

1. Basic Identification

• Manufacturer: Micron Technology, Inc.
• Part Number: MT53E512M32D1ZW-046 AAT:B
• Device Type: LPDDR4X / LPDDR4 SDRAM (Embedded Mobile Low-Power DDR)
• Total Density: 16Gb (2GB)
• Organization: 512M × 32 (2 channels × 16 I/O per channel)
• Die Configuration: D1 = 1-die package
• Speed Grade: -046 → Data rate = 4266 Mb/s; tCK = 468 ps
• Voltage Grade: E = VDD1=1.80V, VDD2=1.10V, VDDQ=0.60V (LPDDR4X)
• Temperature Grade: AAT = Automotive Grade (−40°C to +105°C)
• Package: ZW = 200-ball TFBGA, 10mm × 14.5mm × 1.05mm, 0.40mm SMD
• Revision: :B = Second generation
• Compliance: RoHS, halogen‑free, JEDEC JESD209‑4, automotive qualified

2. Key Architecture & Features

• Max Bandwidth: Up to 8.5 GB/s per channel
• Prefetch: 16n‑bit DDR architecture
• Bank Structure: 8 banks per channel
• Burst Length: Programmable BL = 16 / 32
• Command Protocol: Single-data-rate (SDR) 2‑tick CA bus
• Data Bus: Double-data-rate (DDR) DQ with differential DQS
• Low Power Features:
• Reliability:
• I/O: LVSTL low‑swing signaling; programmable ODT & drive strength

3. Speed & Timing Parameters

• Data Rate: 4266 MT/s
• Clock Cycle: tCK = 468 ps
• Read Latency (RL):
• Write Latency (WL): 18
• Key Timings:

4. Memory Organization

• Channel: Dual‑channel (A + B), ×16 per channel
• Bank Groups: 1 group per channel; 8 banks total
• Row Address: A[15:0] (65,536 rows)
• Column Address: A[9:0]
• Page Size: 2048 bytes (2KB)
• Address Boundary: 64‑bit burst alignment

5. DC & Operating Conditions

Recommended Supply Voltages

• VDD1: 1.70–1.95V (typ 1.80V)
• VDD2: 1.06–1.17V (typ 1.10V)
• VDDQ (LPDDR4X): 0.57–0.65V (typ 0.60V)
• VDDQ (LPDDR4): 1.06–1.17V (typ 1.10V)

Temperature

• Operating (TA): −40°C to +105°C (AAT)
• Storage: −65°C to +150°C

Absolute Maximum Ratings

• VDD1/VDD2/VDDQ: −0.3V to 4.0V
• ESD (HBM): ±2000V

6. Package & Mechanical

• Package Code: ZW
• Type: 200‑ball TFBGA
• Dimensions: 10.0 mm × 14.5 mm × 1.05 mm
• Ball Pitch: 0.40 mm
• Solder: SACQ (Sn‑4Ag‑0.5Cu‑3Bi‑0.05Ni)
• Mounting: Surface‑mount

7. Signal Interface

• Differential clocks: CK_t/CK_c (per channel)
• Differential data strobes: DQS_t/DQS_c (per byte lane)
• Command/Address: CA[5:0] per channel
• Data: DQ[15:0] per channel (×32 total)
• Data mask/inversion: DMI[1:0] per channel
• Clock enable: CKE; Chip select: CS
• ZQ calibration pin; RESET_n; ODT_CA

8. Power Consumption (IDD) – Typical @ 4266 Mb/s

• Active (IDD0): VDD1=8.0mA, VDD2=58.0mA
• Standby (IDD2N): VDD1=2.4mA, VDD2=30.0mA
• Read (IDD4R): VDD1=15.0mA, VDD2=400.0mA, VDDQ=126.1mA
• Write (IDD4W): VDD1=15.0mA, VDD2=300.0mA
• Refresh (IDD5): VDD1=35.0mA, VDD2=190.0mA
• Self‑Refresh (IDD6 @ 85°C): VDD1=5.0mA, VDD2=12.0mA

9. Refresh Specifications

• Base Refresh Interval: tREFI = 7.8125 μs
• Temperature‑dependent:
• Per‑bank refresh support for concurrent operation

10. Key Mode Register Functions

• Burst length & latency configuration (MR0–MR3)
• Read/write preamble/postamble control (MR1)
• DBI enable/disable (MR3)
• ODT for CA & DQ buses (MR11, MR22)
• Internal VREF(CA) / VREF(DQ) calibration (MR12, MR14)
• PASR bank/segment masking (MR16, MR17)
• Frequency set point (FSP) switching (MR13)
• Target Row Refresh (TRR) control (MR24)
• PPR resource monitoring (MR25)

11. Initialization & Training

• Power-up voltage ramp: ≤ 20ms
• RESET_n hold: ≥ 200 μs
• Mandatory training:
• Mode register setup for high‑speed operation

12. Compliance & Quality

• Automotive grade (AAT)
• RoHS & halogen‑free
• JEDEC JESD209‑4 compliant
• Qualified for automotive embedded applications