Micron MT53E512M32D1ZW-046 IT:B LPDDR4X/LPDDR4 SDRAM – Complete Technical Datasheet

1. Basic Identification Information

2. Core Memory Specifications

2.1 Density & Organization

• Total Density: 16Gb (2GB)
• Configuration: 512Meg × 32bit
• Die Structure: 1 die, dual-channel (2×16 I/O)
• Banks per Channel: 8 banks
• Prefetch Architecture: 16n prefetch DDR
• Array Organization: 64Mb × 16 DQ × 8 banks × 2 channels
• Page Size: 2048 bytes per channel
• Row/Column/Bank: R[15:0], C[9:0], BA[2:0]

2.2 Speed & Timing

• Speed Grade: -046
• Cycle Time (tCK): 468 ps
• Max Clock Frequency: 2133 MHz
• Data Rate per Pin: 4266 Mbps
• Max Bandwidth: Up to 8.5 GB/s per die
• Access Time (tAA): 3.5 ns
• Read Latency (RL): 36/40; Write Latency (WL): 18/34
• Burst Length: Programmable BL16 / BL32

2.3 Power Supply

• VDD1: 1.70–1.95V (1.8V nominal)
• VDD2: 1.06–1.17V (1.1V nominal)
• VDDQ: 0.57–0.65V (0.6V nominal, LPDDR4X mode)
• Low-Power Modes: Self-refresh, partial-array self-refresh (PASR), deep power-down, clock stop

3. Physical & Packaging

• Package Type: 200-ball TFBGA
• Dimensions: 10.0 mm × 14.5 mm × 1.05 mm
• Ball Pitch: 0.40 mm (SMD compatible)
• Mounting: Surface Mount (SMT)
• Ball Composition: SACQ (Sn–4Ag–0.5Cu–3Bi–0.05Ni)
• Standard Packaging: Tape-and-reel (TR)

4. Key Features

• JEDEC-compliant LPDDR4X / LPDDR4 dual-mode operation
• Ultra-low-voltage signaling for high efficiency at 4266 Mbps
• On-chip ECC, bad block management, wear leveling
• Per-bank refresh for concurrent operation
• On-chip temperature sensor for auto-refresh control
• Programmable output drive strength & ODT (on-die termination)
• Data Bus Inversion (DBI) & Data Mask (DM) support
• Differential CK/DQS; optional single-ended mode
• ZQ calibration for impedance control
• Two frequency set points (FSP) for fast mode switching

5. Environmental Ratings

• Operating Temperature (TC): -40°C to +95°C
• Storage Temperature: -55°C to +125°C
• ESD: HBM Class 2 (2000V), CDM Class C3 (1000V)
• Moisture Sensitivity Level: MSL 3

6. Typical Applications

• Industrial computing & edge gateways
• Rugged embedded systems & IoT devices
• Industrial automation & control
• High-reliability portable equipment
• Non-automotive infotainment & networking

7. Regulatory & Export

• ECCN: 3A991.a.2
• HTSUS: 8542.32.00.71
• EU RoHS Directive: 2011/65/EU

8. Part Number Decoding

• MT: Micron
• 53: LPDDR4/LPDDR4X family
• E: Voltage option (1.1V VDD2 / 0.6V VDDQ)
• 512M32: 512Meg ×32 organization
• D1: 1-die configuration
• ZW: 200-ball TFBGA 10×14.5×1.05mm
• -046: Speed grade (468ps tCK)
• IT: Industrial temp (-40°C to +95°C)
• :B: Die revision B