Micron MT53E512M32D1ZW‑046 WT:B Full Specification Summary

1. Basic Device Information

• Full Part Number: MT53E512M32D1ZW‑046 WT:B
• Device Type: LPDDR4 / LPDDR4X SDRAM (unified LPDDR4/LPDDR4X)
• Organization: 512M × 32‑bit (2 channels × 16 I/O)
• Density: 16Gb (2GB)
• Configuration: Single‑die, dual‑channel (D1)
• Speed Grade: ‑046; tCK = 468 ps
• Clock / Data Rate: 2133 MHz clock; 4266 Mbps per pin
• Latency: RL = 36/40; WL = 18/34 (DBI Disabled/Enabled)
• Package: 200‑ball TFBGA (ZW)
• Dimensions: 10.0 mm × 14.5 mm × 1.05 mm
• Temperature Grade: WT (–25 °C to +85 °C)
• Special Option: B (alternate substrate)
• Revision: B
• Document: Rev. I (April 2023)
• RoHS Compliant: Yes

2. Core Features

• 16n prefetch DDR architecture
• 8 internal banks per channel for concurrent operation
• Single‑data‑rate (SDR) command/address (CA) bus
• Differential bidirectional data strobe (DQS) per byte lane
• Programmable READ/WRITE latencies (RL/WL)
• Programmable burst lengths: BL = 16 / 32
• Per‑bank refresh for efficient scheduling
• On‑die temperature sensor for adaptive self‑refresh
• Partial‑array self‑refresh (PASR)
• Selectable output drive strength
• Clock‑stop capability
• Programmable on‑die termination (ODT)
• Data Bus Inversion (DBI)
• Write CRC & CA parity support
• Post‑Package Repair (PPR)
• Low‑power design optimized for mobile/embedded systems

3. Voltage Specifications

• VDD1: 1.70 – 1.95 V (nominal 1.80 V)
• VDD2: 1.06 – 1.17 V (nominal 1.10 V)
• VDDQ (LPDDR4X): 0.57 – 0.65 V (nominal 0.60 V)
• VDDQ (LPDDR4): 1.06 – 1.17 V (nominal 1.10 V)

4. Key Timing Parameters (‑046, 4266 Mbps)

表格

5. Device Architecture

• Channels: 2 channels (×16 I/O each)
• Banks per channel: 8 banks
• Row address: A[15:0] (64K rows)
• Column address: A[9:0]
• Page size: 2KB per bank
• Prefetch: 256 bits per channel

6. Package & Mechanical

• Package Code: ZW
• Form Factor: 200‑ball TFBGA
• Size: 10.0 × 14.5 × 1.05 mm
• Ball pitch: 0.65 mm typical
• Solder ball: Ø0.40 mm SMD
• Mounting: Surface‑mount (SMT)
• Moisture Sensitivity Level: MSL 3

7. Key Pin Groups

• Differential clocks: CK_t / CK_c (per channel)
• Command/Address: CA[5:0], CKE, CS
• Data: DQ[15:0] per channel
• Data strobe: DQS_t / DQS_c per byte lane
• Data mask / inversion: DMI
• Calibration: ZQ
• Power: VDD1, VDD2, VDDQ, VSS
• Reset: RESET_n

8. Power & Reliability

• Low active & standby currents
• Full‑array self‑refresh current as low as 0.65 mA (25 °C)
• Power‑failure robust design
• Hardware reset support
• ESD protection: HBM > 2kV, CDM > 1kV

9. Operating Conditions

• Ambient Temperature (TA): −25 °C to +85 °C
• Supply voltages as specified in Section 3
• Clock frequency: 10 MHz – 2133 MHz
• JEDEC JESD209‑4 compliant

10. Target Applications

• Smartphones, tablets, wearables
• Mobile computing & portable electronics
• Industrial embedded systems
• Automotive infotainment (non‑safety)
• High‑bandwidth, low‑power embedded designs