NXP NX3L1T5157GMAZ

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Specifications
Type
Paramete
Type
Paramete
-3db Bandwidth
60MHz
Crosstalk
-
Grade
Automotive
Supplier Device Package
6-XSON, SOT886 (1.45x1)
Charge Injection
15pC
Multiplexer/Demultiplexer Circuit
2:1
Switch Circuit
SPDT
Voltage - Supply, Dual (V±)
-
Current - Leakage (IS(off)) (Max)
10nA
Qualification
AEC-Q100
Channel Capacitance (CS(off), CD(off))
35pF
Switch Time (Ton, Toff) (Max)
40ns, 20ns
Package / Case
6-XFDFN
Number of Circuits
1
Mounting Type
Surface Mount
Voltage - Supply, Single (V+)
1.4V ~ 4.3V
Operating Temperature
-40°C ~ 125°C (TA)
Channel-to-Channel Matching (ΔRon)
100mOhm
On-State Resistance (Max)
900mOhm
Overview

DESCRIPTION

· The NX3L1T3157 is a low-ohmic single-pole double-throw analog switch designed for use as a 2:1 multiplexer/demultiplexer in both analog and digital applications. It features a digital select input (S), two independent inputs/outputs (Y0 and Y1), and a common input/output (Z). The device supports signal transmission up to VCC and is compatible with 1.8 V logic levels in 3.3 V applications, eliminating the need for logic level translation. It ensures minimal signal attenuation and distortion with low ON resistance and flatness.



FEATURES

· Wide supply voltage range from 1.4 V to 4.3 V.
· Very low ON resistance: 1.6 Ω at 1.4 V, 1.0 Ω at 1.65 V, 0.55 Ω at 2.3 V, 0.50 Ω at 2.7 V and 4.3 V.
· Break-before-make switching.
· High noise immunity and ESD protection: HBM exceeds 7500 V, MM exceeds 200 V, CDM exceeds 1000 V, IEC61000-4-2 contact discharge exceeds 8000 V.
· CMOS low-power consumption.
· Latch-up performance exceeds 100 mA.
· 1.8 V control logic at VCC = 3.6 V.
· Control input accepts voltages above supply voltage.
· High current handling capability: 350 mA continuous current under 3.3 V supply.
· Operating temperature range: -40°C to +125°C.



APPLICATIONS

· Signal multiplexing and demultiplexing in analog and digital systems.
· Interface level shifting without additional logic level translation.
· Signal routing in portable and battery-powered devices.
· High-speed signal switching with minimal distortion.
· Applications requiring high noise immunity and ESD protection.



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