CY7C1474V25-200BGXI: A High-Performance SRAM Solution from Infineon Technologies

Overview

The CY7C1474V25-200BGXI is a 72-Mbit Pipelined SRAM with No Bus Latency™ (NoBL™) architecture, offered by Infineon Technologies, a company known for its cutting-edge semiconductor solutions. This SRAM is designed to deliver exceptional performance for applications demanding high-speed data throughput, such as high-performance computing, graphics processing, communication equipment, and industrial control systems.

Pin Configurations

Key Features

• Capacity: 72-Mbit (1M × 72)
• Operation Frequency: Supports bus operations up to 200 MHz with zero wait states, ensuring seamless data transfer.
• Package Type: 209-ball FBGA (14 × 22 × 1.76 mm), compliant with JEDEC standards for industry compatibility.
• Power Supply: Single 2.5V power supply for simplicity and efficiency.
• I/O Supply: 2.5V I/O supply (VDDQ) for consistent performance across the device.
• Fast Clock-to-Output Time: 3.0 ns for the 200 MHz device, enabling rapid data retrieval.
• Clock Enable (CEN) Pin: Allows for the suspension of operation when not in use, conserving power.
• Synchronous Self-Timed Writes: Streamlines the write process for increased efficiency.
• IEEE 1149.1 JTAG Boundary Scan Compatibility: Facilitates standard testing and debugging procedures.
• Burst Capability: Supports both linear and interleaved burst orders for flexible data handling.
• "ZZ" Sleep Mode Option: Includes a stop clock option for power conservation during periods of inactivity.

Applications

The CY7C1474V25-200BGXI is well-suited for a variety of applications where high-speed data storage and retrieval are critical:

• High-Performance Computing: Provides rapid data access for processors in demanding computational tasks.
• Graphics Processing: Ensures the necessary data throughput for graphics-intensive applications.
• Communication Equipment: Supports high-speed data transmission and processing in networking hardware.
• Industrial Control: Offers reliable data storage in automation and control system applications.

Technical Specifications

• Maximum Access Time: 3.0 ns for the 200 MHz device, ensuring quick data availability.
• Maximum Operating Current: 450 mA, balanced for performance and power efficiency.
• CMOS Standby Current: 120 mA, minimizing power consumption during idle states.

Conclusion

With its superior performance and reliability, the CY7C1474V25-200BGXI stands out as an ideal choice for applications requiring high-speed data processing. Infineon Technologies solidifies its position as a leader in the global semiconductor market by offering this SRAM, which meets the stringent requirements of modern electronics.