Categories
- Single, Pre-Biased Bipolar Transistors(620)




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MZX84C3V9LT1G
Zener Diodes 3.9V 250mW
onsemi

BSS84LT1
MOSFET P-CH 50V 130MA SOT-23
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BSS138LT1G
MOSFET N-CH 50V 200MA SOT23-3
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BSS123LT1G
MOSFET N-CH 100V 170MA SOT23-3
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BSS138
MOSFET N-CH 50V 220MA SOT23-3
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BSS123
MOSFET N-CH 100V 170MA SOT23-3
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2N7002K
MOSFET N-CH 60V 320MA SOT23
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SMMUN2111LT1G-M01
TRANS PREBIAS PNP 50V SOT23-3
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NSVMMUN2113LT3G
TRANS PREBIAS PNP 50V SOT23-3
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MUN5235T1
TRANS PREBIAS NPN 50V SC70-3
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MUN5231T1
TRANS PREBIAS NPN 50V SC70-3
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MUN5113T1
TRANS PREBIAS PNP 50V SC70-3
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MUN2213JT1
TRANS PREBIAS NPN 50V 0.1A SC59
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MUN2134T1
TRANS PREBIAS PNP 50V 0.1A SC59
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MUN2111T3G
TRANS PREBIAS PNP 50V 0.1A SC59
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MMUN2230LT1
TRANS PREBIAS NPN 50V SOT23-3
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MMUN2134LT1
TRANS PREBIAS PNP 50V SOT23-3
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DTC123EET1
TRANS PREBIAS NPN 50V 0.1A SC75
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DTA143EET1
TRANS PREBIAS PNP 50V 0.1A SC75
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DTA114TXV3T1G
TRANS PREBIAS PNP 50V SC89-3
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What are Pre-biased bipolar transistors?
Pre-biased bipolar transistors include internal resistors that keep the device close to its bias or operating point when no input signal is present. This biasing enables the transistor to function more efficiently and generate a stable, undistorted output signal. Additionally, pre-biased transistors minimize the need for external circuit components, leading to lower project costs.
- Manufacturers
- Stocking Options
- Environmental Options
- Resistance - RDS(On)
- Test Condition
- Technology
- Td (on/off) @ 25°C
- Switching Energy
- Supplier Device Package
- Structure
- Speed
- SCR Type
- Reverse Recovery Time (trr)
- Resistor - Emitter Base (R2)
- Resistor - Base (R1)
- Resistance @ If, F
- Tolerance
- Regulator Current (Max)
- Rds On (Max) @ Id, Vgs
- Qualification
- Q @ Vr, F
- Power Dissipation (Max)
- Power - Output
- Power - Max
- Package / Case
- Operating Temperature - Junction
- Operating Temperature
- Number of SCRs, Diodes
- Voltage - Collector Emitter Breakdown (Max)
- Voltage - Zener (Nom) (Vz)
- Voltage - Test
- Voltage - Rated
- Voltage - Peak Reverse (Max)
- Voltage - On State (Vtm) (Max)
- Voltage - Off State
- Voltage - Limiting (Max)
- Voltage - Isolation
- Voltage - Gate Trigger (Vgt) (Max)
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Voltage - Cutoff (VGS off) @ Id
- NTC Thermistor
- Voltage - Breakover
- Voltage - Breakdown (V(BR)GSS)
- Voltage - Anode - Cathode (Vak)(Max)
- Voltage
- Vgs(th) (Max) @ Id
- Vgs (Max)
- Vce(on) (Max) @ Vge, Ic
- Vce Saturation (Max) @ Ib, Ic
- Type
- Triac Type
- Transistor Type
- Current - Collector Pulsed (Icm)
- Current - Test
- Current - Reverse Leakage @ Vr
- Current - Peak Output
- Current - On State (It (RMS)) (Max)
- Current - On State (It (AV)) (Max)
- Current - Off State (Max)
- Current - Non Rep. Surge 50, 60Hz (Itsm)
- Current - Max
- Current - Hold (Ih) (Max)
- Current - Gate Trigger (Igt) (Max)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Current - Continuous Drain (Id) @ 25°C
- Current Drain (Id) - Max
- Current - Collector Cutoff (Max)
- Current - Collector (Ic) (Max)
- Current - Breakover
- Current - Average Rectified (Io) (per Diode)
- Current - Average Rectified (Io)
- Current
- Configuration
- Capacitance Ratio Condition
- Capacitance Ratio
- Capacitance @ Vr, F
- Base Product Number
- Gate Charge
- Noise Figure (dB Typ @ f)
- Noise Figure
- Mounting Type
- Mfr
- Input Type
- Input Capacitance (Ciss) (Max) @ Vds
- Input Capacitance (Cies) @ Vce
- Input
- Impedance (Max) (Zzt)
- IGBT Type
- Grade
- Gate Charge (Qg) (Max) @ Vgs
- Applications
- Gain
- Frequency - Transition
- Frequency
- FET Type
- FET Feature
- Drive Voltage (Max Rds On, Min Rds On)
- Drain to Source Voltage (Vdss)
- Diode Type
- Diode Configuration
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Current Rating (Amps)







