BSS123LT1G Product Summary

Basic Information

• Part Number: BSS123LT1G
• Package Type: SOT-23 (Pb-Free)
• Shipping Quantity: 3000 per Tape & Reel
• Case Style: CASE 318 STYLE 21

General Description

The BSS123LT1G is an N-Channel enhancement mode MOSFET designed for low voltage, low current applications. It features high cell density DMOS technology, providing low on-state resistance and fast switching performance. This device is suitable for applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

• Drain-Source Voltage (VDSS): 100 Vdc
• Drain Current (ID):Continuous: 0.17 APulsed: 0.68 A
• On-State Resistance (RDS(on)): 6 Ω @ VGS = 10 Vdc, ID = 100 mA
• ESD Protection: HBM Class 0A, MM Class M1B
• Automotive Grade: BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• RoHS Compliance: Pb-Free and RoHS Compliant

Marking Diagram & Pin Assignment

• Device Code: SA
• Date Code: M
• Pb-Free Package Indicator: �
• Pin Configuration:Pin 1: GatePin 2: SourcePin 3: Drain

Maximum Ratings (@TA = 25°C, unless otherwise noted)

• Drain-Source Voltage (VDSS): 100 Vdc
• Gate-Source Voltage (VGS):Continuous: ±20 VdcNon-repetitive (tp ≤ 50 µs): ±40 Vpk
• Drain Current (ID):Continuous: 0.17 APulsed: 0.68 A
• Total Device Dissipation (PD): 225 mW (FR-5 Board, TA = 25°C)
• Thermal Resistance, Junction-to-Ambient (RθJA): 556 °C/W
• Junction and Storage Temperature (TJ, TSTG): -55 to +150 °C

Thermal Characteristics

• Total Device Dissipation (PD): 225 mW (FR-5 Board, TA = 25°C)
• Derate Above 25°C: 1.8 mW/°C
• Thermal Resistance, Junction-to-Ambient (RθJA): 556 °C/W

Electrical Characteristics (@TA = 25°C, unless otherwise noted)

• OFF CHARACTERISTICS:Drain-Source Breakdown Voltage (V(BR)DSS): 100 Vdc (VGS = 0, ID = 250 µA)Zero Gate Voltage Drain Current (IDSS):TJ = 25°C: 15 µATJ = 125°C: 60 µAGate-Body Leakage Current (IGSS): ±50 nA (VGS = 20 Vdc, VDS = 0)
• ON CHARACTERISTICS:Gate Threshold Voltage (VGS(th)): 1.6 to 2.6 Vdc (VDS = VGS, ID = 1.0 mA)Static Drain-Source On-Resistance (RDS(on)): 6.0 Ω (VGS = 10 Vdc, ID = 100 mA)Forward Transconductance (gfs): 80 mmhos (VDS = 25 Vdc, ID = 100 mA)
• DYNAMIC CHARACTERISTICS:Input Capacitance (Ciss): 20 pF (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)Output Capacitance (Coss): 9.0 pFReverse Transfer Capacitance (Crss): 4.0 pF
• SWITCHING CHARACTERISTICS:Turn-On Delay Time (td(on)): 20 ns (VCC = 30 Vdc, IC = 0.28 A, VGS = 10 Vdc, RGS = 50 Ω)Turn-Off Delay Time (td(off)): 40 ns
• REVERSE DIODE:Diode Forward On-Voltage (VSD): 1.3 V (ID = 0.34 A, VGS = 0 Vdc)

Ordering Information

• BSS123LT1G: SOT-23 (Pb-Free), 3000 per Tape & Reel
• BVSS123LT1G: SOT-23 (Pb-Free), 3000 per Tape & Reel (Automotive Grade)
• BSS123LT7G: SOT-23 (Pb-Free), 3500 per Tape & Reel

Typical Electrical Characteristics

• On-Region Characteristics: See Figure 1
• Transfer Characteristics: See Figure 2
• On-Resistance vs. Drain Current and Gate Voltage: See Figure 3
• Capacitance Variation: See Figure 4
• Gate-to-Source and Drain-to-Source Voltage vs. Total Charge: See Figure 5
• Diode Forward Voltage vs. Current: See Figure 6
• Maximum Rated Forward Biased Safe Operating Area: See Figure 7
• Thermal Response: See Figure 8

Mechanical Case Outline Package Dimensions

• SOT-23 (TO-236): 2.90x1.30x1.00 mm
• Pin Configuration:Pin 1: GatePin 2: SourcePin 3: Drain