BSS123 Product Summary

Basic Information

• Part Number: BSS123
• Package Type: SOT-23-3 (Pb-Free)
• Shipping Quantity: 3000 per Tape & Reel
• Case Style: CASE 318-08

General Description

The BSS123 is an N-Channel enhancement mode field effect transistor produced using onsemi's proprietary, high cell density, DMOS technology. It is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

• Drain-Source Voltage (VDS): 100 V
• Drain Current (ID):Continuous: 0.17 APulsed: 0.68 A
• On-State Resistance (RDS(on)):6 Ω @ VGS = 10 V10 Ω @ VGS = 4.5 V
• High Density Cell Design for Extremely Low RDS(on)
• Rugged and Reliable
• Compact Industry Standard SOT-23 Surface Mount Package
• Pb-Free and Halogen-Free

Marking Diagram

• Device: BSS123
• Package: SOT-23-3
• Shipping: 3000 / Tape & Reel
• Specific Device Code: S
• Date Code: M
• Pb-Free Package Indicator: �

Ordering Information

• BSS123: SOT-23-3 (Pb-Free) 3000 / Tape & Reel
• BSS123-G: SOT-23-3 (Pb-Free) 3000 / Tape & Reel

Absolute Maximum Ratings (@TA = 25°C, unless otherwise noted)

• Drain-Source Voltage (VDSS): 100 V
• Gate-Source Voltage (VGSS): ±20 V
• Drain Current (ID):Continuous: 0.17 APulsed: 0.68 A
• Maximum Power Dissipation (PD): 0.36 W
• Derate Above 25°C: 2.8 mW/°C
• Operating and Storage Junction Temperature Range (TJ, TSTG): -55 to +150 °C
• Maximum Lead Temperature for Soldering Purposes (TL): 300 °C

Thermal Characteristics (@TA = 25°C, unless otherwise noted)

• Thermal Resistance, Junction-to-Ambient (RθJA): 350 °C/W

Electrical Characteristics (@TA = 25°C, unless otherwise noted)

• OFF CHARACTERISTICS:Drain-Source Breakdown Voltage (BVDSS): 100 V (VGS = 0 V, ID = 250 µA)Breakdown Voltage Temperature Coefficient (dBVDSS/dTJ): -97 mV/°C (ID = 250 µA, Referenced to 25°C)Zero Gate Voltage Drain Current (IDSS):VDS = 100 V, VGS = 0 V: 1 µAVDS = 100 V, VGS = 0 V, TJ = 125°C: 60 µAVDS = 20 V, VGS = 0 V: 10 nAGate-Body Leakage (IGSS): ±50 nA (VGS = ±20 V, VDS = 0 V)
• ON CHARACTERISTICS:Gate Threshold Voltage (VGS(th)): 0.8 to 2 V (VDS = VGS, ID = 1 mA)Gate Threshold Voltage Temperature Coefficient (dVGS(th)/dTJ): -2.7 mV/°C (ID = 1 mA, Referenced to 25°C)Static Drain-Source On-Resistance (RDS(on)):VGS = 10 V, ID = 0.17 A: 1.2 to 6 ΩVGS = 4.5 V, ID = 0.17 A: 1.3 to 10 ΩVGS = 10 V, ID = 0.17 A, TJ = 125°C: 2.2 to 12 ΩOn-State Drain Current (ID(on)): 0.68 A (VGS = 10 V, VDS = 5 V)Forward Transconductance (gFS): 0.08 to 0.8 S (VDS = 10 V, ID = 0.17 A)
• DYNAMIC CHARACTERISTICS:Input Capacitance (Ciss): 73 pF (VDS = 25 V, VGS = 0 V, f = 1.0 MHz)Output Capacitance (Coss): 7 pFReverse Transfer Capacitance (Crss): 3.4 pFGate Resistance (RG): 2.2 Ω (VGS = 15 mV, f = 1.0 MHz)
• SWITCHING CHARACTERISTICS:Turn-On Delay Time (td(on)): 1.7 to 3.4 ns (VDD = 30 V, ID = 0.28 A, VGS = 10 V, RGEN = 6 Ω)Turn-On Rise Time (tr): 9 to 18 nsTurn-Off Delay Time (td(off)): 17 to 31 nsTurn-Off Fall Time (tf): 2.4 to 5 nsTotal Gate Charge (Qg): 1.8 to 2.5 nC (VDS = 30 V, ID = 0.22 A, VGS = 10 V)Gate-Source Charge (Qgs): 0.2 nCGate-Drain Charge (Qgd): 0.3 nC
• DRAIN-SOURCE DIODE CHARACTERISTICS:Maximum Continuous Drain-Source Diode Forward Current (IS): 0.17 ADrain-Source Diode Forward Voltage (VSD): 0.8 to 1.3 V (VGS = 0 V, IS = 0.44 A)Diode Reverse Recovery Time (trr): 11 ns (IF = 0.17 A, dIF/dt = 100 A/µs)Diode Reverse Recovery Charge (Qrr): 3 nC

Typical Characteristics

• On-Region Characteristics: See Figure 1
• On-Resistance Variation with Drain Current and Gate Voltage: See Figure 2
• On-Resistance Variation with Temperature: See Figure 3
• On-Resistance Variation with Gate-to-Source Voltage: See Figure 4
• Transfer Characteristics: See Figure 5
• Body Diode Forward Voltage Variation with Source Current and Temperature: See Figure 6
• Gate Charge Characteristics: See Figure 7
• Capacitance Characteristics: See Figure 8
• Maximum Safe Operating Area: See Figure 9
• Single Pulse Maximum Power Dissipation: See Figure 10
• Transient Thermal Response Curve: See Figure 11

Mechanical Case Outline Package Dimensions

• SOT-23 (TO-236): 2.90x1.30x1.00 mm
• Pin Configuration:Pin 1: GatePin 2: SourcePin 3: Drain